ETC 2SC3929R

Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
Unit: mm
■ Features
2SC3929A
Collector to
2SC3929
VEBO
Peak collector current
35
0.3–0
0.65
+0.1
V
55
5
V
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
1.3±0.1
V
55
VCEO
Emitter to base voltage
Unit
35
VCBO
emitter voltage 2SC3929A
2
Ratings
+0.1
2SC3929
base voltage
3
0.15–0.05
Collector to
0.65
(Ta=25˚C)
Symbol
1
0 to 0.1
Parameter
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
0.425
2.0±0.2
●
2.1±0.1
Low noise voltage NV.
High foward current transfer ratio hFE.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : S(2SC3929)
T(2SC3929A)
(Ta=25˚C)
Symbol
Parameter
Conditions
min
typ
max
Unit
ICBO
VCB = 10V, IE = 0
100
nA
ICEO
VCE = 10V, IB = 0
1
µA
VCBO
IC = 10µA, IE = 0
VCEO
IC = 2mA, IB = 0
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
Forward current transfer ratio
hFE*
VCE = 5V, IC = 2mA
Collector to emitter saturation voltage
VCE(sat)
IC = 100mA, IB = 10mA
Base to emitter voltage
VBE
VCE = 1V, IC = 100mA
Noise voltage
NV
Transition frequency
fT
Collector cutoff current
Collector to base
2SC3929
voltage
2SC3929A
Collector to emitter
2SC3929
voltage
2SC3929A
*1h
FE1
35
V
55
35
V
55
V
5
180
700
0.7
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
VCB = 5V, IE = –2mA, f = 200MHz
80
0.6
V
1
V
150
mV
MHz
Rank classification
Marking
Symbol
Rank
R
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700
2SC3929
SR
SS
ST
2SC3929A
TR
TS
TT
1
Transistor
2SC3929, 2SC3929A
PC — Ta
IC — VCE
Ta=25˚C
120
80
IB=350µA
120
300µA
100
250µA
80
200µA
60
150µA
100µA
40
Collector current IC (mA)
160
120
100
80
60
40
40
50µA
20
20
0
40
60
80 100 120 140 160
0
0
2
Collector to emitter saturation voltage VCE(sat) (V)
VCE=5V
100
–25˚C
80
60
40
20
0
0
0.4
0.8
1.2
1.6
2.0
30
10
3
1
0.3
0.1
25˚C
Ta=75˚C
–25˚C
0.03
0.01
0.1
0.3
1
3
10
200
100
–30
Emitter current IE (mA)
–100
0.2
0.3
0.4
0.5
hFE — IC
720
30
VCE=5V
600
Ta=75˚C
480
25˚C
360
–25˚C
240
120
0
0.1
100
0.3
1
3
10
30
100
Collector current IC (mA)
NV — VCE
20
160
IE=0
f=1MHz
Ta=25˚C
IC=1mA
GV=80dB
Function=FLAT
140
16
Noise voltage NV (mV)
300
–10
0.1
Base current IB (mA)
Collector current IC (mA)
Collector output capacitance Cob (pF)
400
–3
0
Cob — VCB
VCB=5V
Ta=25˚C
–1
12
IC/IB=10
fT — IE
0
– 0.1 – 0.3
10
100
Base to emitter voltage VBE (V)
500
8
VCE(sat) — IC
120
Ta=75˚C
6
Collector to emitter voltage VCE (V)
IC — VBE
25˚C
4
Forward current transfer ratio hFE
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
VCE=5V
Ta=25˚C
140
200
0
Transition frequency fT (MHz)
160
140
0
2
IC — I B
160
Collector current IC (mA)
Collector power dissipation PC (mW)
240
12
8
4
120
Rg=100kΩ
100
80
60
22kΩ
40
4.7kΩ
20
0
0.1
0
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
1
3
10
30
100
Collector to emitter voltage VCE (V)
Transistor
2SC3929, 2SC3929A
NV — VCE
NV — IC
240
IC=1mA
GV=80dB
Function=RIAA
180
120
22kΩ
60
4.7kΩ
3
VCE=10V
GV=80dB
Function=RIAA
VCE=10V
GV=80dB
Function=FLAT
120
100
Rg=100kΩ
80
60
22kΩ
40
4.7kΩ
240
180
Rg=100kΩ
120
22kΩ
60
4.7kΩ
20
0
1
300
140
Noise voltage NV (mV)
Noise voltage NV (mV)
Rg=100kΩ
10
30
0
0.01
100
Collector to emitter voltage VCE (V)
0.03
0.1
0.3
1
Collector current IC (mA)
NV — Rg
0
0.01
0.03
0.1
0.3
1
Collector current IC (mA)
NV — Rg
160
300
VCE=10V
GV=80dB
Function=RIAA
120
100
80
IC=1mA
60
0.5mA
40
0.1mA
Noise voltage NV (mV)
VCE=10V
GV=80dB
Function=FLAT
140
Noise voltage NV (mV)
NV — IC
160
Noise voltage NV (mV)
300
240
180
IC=1mA
120
0.5mA
60
0.1mA
20
0
0
1
3
10
30
100
Signal source resistance Rg (kΩ)
1
3
10
30
100
Signal source resistance Rg (kΩ)
3
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2001 MAR