Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm ■ Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.3±0.1 V 55 VCEO Emitter to base voltage Unit 35 VCBO emitter voltage 2SC3929A 2 Ratings +0.1 2SC3929 base voltage 3 0.15–0.05 Collector to 0.65 (Ta=25˚C) Symbol 1 0 to 0.1 Parameter 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 0.425 2.0±0.2 ● 2.1±0.1 Low noise voltage NV. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : S(2SC3929) T(2SC3929A) (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = 10V, IE = 0 100 nA ICEO VCE = 10V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCE = 5V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Base to emitter voltage VBE VCE = 1V, IC = 100mA Noise voltage NV Transition frequency fT Collector cutoff current Collector to base 2SC3929 voltage 2SC3929A Collector to emitter 2SC3929 voltage 2SC3929A *1h FE1 35 V 55 35 V 55 V 5 180 700 0.7 VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 5V, IE = –2mA, f = 200MHz 80 0.6 V 1 V 150 mV MHz Rank classification Marking Symbol Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC3929 SR SS ST 2SC3929A TR TS TT 1 Transistor 2SC3929, 2SC3929A PC — Ta IC — VCE Ta=25˚C 120 80 IB=350µA 120 300µA 100 250µA 80 200µA 60 150µA 100µA 40 Collector current IC (mA) 160 120 100 80 60 40 40 50µA 20 20 0 40 60 80 100 120 140 160 0 0 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=5V 100 –25˚C 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 30 10 3 1 0.3 0.1 25˚C Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 200 100 –30 Emitter current IE (mA) –100 0.2 0.3 0.4 0.5 hFE — IC 720 30 VCE=5V 600 Ta=75˚C 480 25˚C 360 –25˚C 240 120 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NV — VCE 20 160 IE=0 f=1MHz Ta=25˚C IC=1mA GV=80dB Function=FLAT 140 16 Noise voltage NV (mV) 300 –10 0.1 Base current IB (mA) Collector current IC (mA) Collector output capacitance Cob (pF) 400 –3 0 Cob — VCB VCB=5V Ta=25˚C –1 12 IC/IB=10 fT — IE 0 – 0.1 – 0.3 10 100 Base to emitter voltage VBE (V) 500 8 VCE(sat) — IC 120 Ta=75˚C 6 Collector to emitter voltage VCE (V) IC — VBE 25˚C 4 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Collector current IC (mA) VCE=5V Ta=25˚C 140 200 0 Transition frequency fT (MHz) 160 140 0 2 IC — I B 160 Collector current IC (mA) Collector power dissipation PC (mW) 240 12 8 4 120 Rg=100kΩ 100 80 60 22kΩ 40 4.7kΩ 20 0 0.1 0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC3929, 2SC3929A NV — VCE NV — IC 240 IC=1mA GV=80dB Function=RIAA 180 120 22kΩ 60 4.7kΩ 3 VCE=10V GV=80dB Function=RIAA VCE=10V GV=80dB Function=FLAT 120 100 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 240 180 Rg=100kΩ 120 22kΩ 60 4.7kΩ 20 0 1 300 140 Noise voltage NV (mV) Noise voltage NV (mV) Rg=100kΩ 10 30 0 0.01 100 Collector to emitter voltage VCE (V) 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 0 0.01 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 160 300 VCE=10V GV=80dB Function=RIAA 120 100 80 IC=1mA 60 0.5mA 40 0.1mA Noise voltage NV (mV) VCE=10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) NV — IC 160 Noise voltage NV (mV) 300 240 180 IC=1mA 120 0.5mA 60 0.1mA 20 0 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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