To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR5PM-14 Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ........................................................................ 5A VDRM ....................................................................... 700V IFGT !, IRGT !, IRGT # ............................................ 30mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 2.54 123 0.5 2.6 ∗ Measurement point of case temperature 4.5 • • • • • 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, washing machine, small motor control, copying machine, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter VDRM Repetitive peak off-state VDSM Non-repetitive peak off-state voltage ✽1 Symbol Unit 14 voltage ✽1 Parameter 700 V 840 V Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=95°C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation 3 W PG (AV) Average gate power dissipation 0.3 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg Storage temperature — Viso Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 5 A 50 A 10.4 A2s A –40 ~ +125 °C –40 ~ +125 °C 2.0 g 2000 V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=7A, Instantaneous measurement — — 1.8 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 — — 4.0 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 5 — — V/µs ✽4 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–2.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE TIME (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 100 101 7 5 3 2 Tj = 125°C 100 7 5 3 2 10–1 0.5 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 5 3 2 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 PG(AV) = 0.3W 3 VGT = 1.5V 2 100 7 5 3 2 PGM = 3W IGM = 2A IFGT I IRGT I IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 7 5 TYPICAL EXAMPLE IRGT I, IRGT III 3 2 102 7 5 IFGT I 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 TYPICAL EXAMPLE 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 10 9 8 360° 7 CONDUCTION 6 RESISTIVE, INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 8 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 60 60 t2.3 60 NATURAL 40 CONVECTION RESISTIVE, CURVES APPLY 20 REGARDLESS OF INDUCTIVE CONDUCTION ANGLE LOADS 0 0 8 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A) 40 20 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) 0 103 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 60 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) 80 100 100 t2.3 80 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE INDUCTIVE LOADS 100 120 120 t2.3 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 103 7 5 3 2 102 7 5 3 2 DISTRIBUTION T2+, G– TYPICAL EXAMPLE T2–, G– TYPICAL EXAMPLE 101 7 5 3 2 T2+, G+ TYPICAL EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 TYPICAL EXAMPLE 140 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 3 2 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 160 TYPICAL EXAMPLE Tj = 125°C 120 III QUADRANT 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH SUPPLY VOLTAGE TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME VD 101 7 5 100 (%) 102 7 5 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 140 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz MINIMUM I QUADRANT 3 CHARAC2 TERISTICS VALUE III QUADRANT 100 0 10 2 3 5 7 102 2 3 5 7 101 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 IFGT I TYPICAL EXAMPLE IRGT I IRGT III 3 2 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V V A 6V RG TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002