FS01...A/B SENSITIVE GATE SCR TO92 (Plastic) RD26 (Plastic) On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V K G A A G K FS01...A FS01...B This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. All Conduction Angle, TL = 55 ºC Half Cycle, Θ = 180 º, TL = 55 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. 1.6 mm from case, 10s max. RGK = 1 KΩ Unit 1 2 0.1 +125 +150 260 A A A A A2s V A W W ºC ºC ºC 0.8 0.5 8 7 0.24 8 -40 -40 CONDITIONS Max. VOLTAGE B 200 D 400 Unit M 600 V Jul - 02 FS01...A/B SENSITIVE GATE SCR Electrical Characteristics SYMBOL IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt PARAMETER CONDITIONS Unit SENSITIVITY 01 02 03 04 11 18 MIN 1 20 15 4 0.5 µA Gate Trigger Current VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX 20 200 200 50 25 5 µA = V , R = 1KΩ, T = 125 ºC 100 MAX Off-State Leakage Current VD DRM GK j VR = VRRM , Tj = 25 ºC MAX 1 V 1.95 at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX On-state Voltage V 0.95 On-state Threshold Voltage Tj = 125 ºC MAX 600 mΩ Tj = 125 ºC Dinamic Resistance MAX 0.8 V VD = 12 VDC , RL = 140Ω, Tj = 25 ºC Gate Trigger Voltage MAX 0.1 Gate Non Trigger Voltage VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN V Tj = 125 ºC Holding Current mA MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC 5 Latching Current mA MAX IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC 6 MIN VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC Critical Rate of Voltage Rise di / dt Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Rth(j-l) Rth(j-a) 75 75 100 MIN 80 80 75 V/µs 50 A/µs Thermal Resistance Junction-Leads for DC 80 ºC/W Thermal Resistance Junction-Ambient 150 ºC/W PART NUMBER INFORMATION F S 01 01 B A 00 BU FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Jul - 02 FS01...A/B SENSITIVE GATE SCR Fig. 1: Maximum average power dissipation versus average on-state current Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). P (W) T lead (ºC) -45 P (W) 1 1 360 º Rth (j-l) 0.8 0.8 α 0.6 α = 180 º -65 Rth (j-a) DC 0.6 -85 α = 120 º 0.4 0.4 α = 90 º α = 60 º 0.2 -105 0.2 IT(AV)(A) α = 30 º 0 Tamb (ºC) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3: Average on-state current versus lead temperature 0 20 40 60 80 -125 100 120 140 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. I T(AV) (A) Zth(j-a) / Rth(j-a) 1 1.00 DC 0.8 0.6 0.10 α = 180 º 0.4 0.2 tp (s) T lead (ºC) 0 0 20 40 60 80 100 120 140 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Ih (Tj) Igt (Tj = 25 ºC) Ih (Tj = 25 ºC) 10.0 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8 Tj initial = 25 ºC 9.0 7 8.0 6 7.0 5 6.0 Igt 5.0 4 4.0 3 3.0 2.0 2 Ih 1 1.0 Number of cycles Tj (ºC) 0 0.0 -40 -20 0 20 40 60 80 100 120 140 1 10 100 1,000 Jul - 02 FS01...A/B SENSITIVE GATE SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A). I2t (A2s) Fig. 9: Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk = 1kΩ) ITM(A) 10 100 5.0 Tj = 25 ºC Tj initial = 25 ºC Tj initial 25 ºC ITSM Tj max 10 1.0 1 Tj max Vto = 0.95 V Rt = 0.600Ω 1 I2 t VTM(V) tp(ms) 0.1 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 PACKAGE MECHANICAL DATA Rgk (Ω) 0.1 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 TO92 (Plastic) Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 DIMENSIONS Millimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 REF. A C H a D B b E F G A B C D E F G H a b Marking: type number Weight: 0.2 g PACKAGE MECHANICAL DATA RD26 (Plastic) C REF. D A G a B b 45º E F A B C D E F G a b Marking: type number Weight: 0.2 g Jul - 02