P01xxxL SENSITIVE GATE SCR FEATURES IT(RMS) = 0.2A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA A G K DESCRIPTION The P01xxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. SOT23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) * RMS on-state current (180° conduction angle) Ta= 25°C 0.26 A IT(AV) * Mean on-state current (180° conduction angle) Ta= 25°C 0.17 A Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 8.3 ms 7.5 A tp = 10 ms 7 I2t Value for fusing tp = 10 ms 0.24 A2s 30 A/µs - 40, + 150 - 40, + 125 °C 260 °C ITSM I2t dI/dt Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs. Tstg Tj Storage and operating junction temperature range Tl Maximum lead temperature for soldering during 10s * : Mounted on a ceramic substrate of 8 x 10 x 0.7mm. Symbol VDRM VRRM January 1995 Voltage Parameter Repetitive peak off-state voltage Tj = 125°C RGK = 1KΩ Unit A B C D 100 200 300 400 V 1/6 P01xxxL THERMAL RESISTANCES Symbol Rth(j-a) Parameter Value Unit 500 °C/W Junction to ambient * * : Mounted on a ceramic substrate of 8 x 10 x 0.7mm. GATE CHARACTERISTICS (maximum values) PG (AV)= 0.02 W PGM = 1 W (tp = 20 µs) IGM = 0.5 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Sensitivity Test Conditions VD=12V (DC) RL=140Ω Tj= 25°C Unit 02 09 11 15 MIN - - 4 15 MAX 200 1 25 50 µA VGT VD=12V (DC) RL=140Ω Tj= 25°C MAX 0.8 V VGD VD=VDRM RL=3.3kΩ RGK = 1 KΩ Tj= 125°C MIN 0.1 V IRG =10µA Tj= 25°C MIN 8 V Tj= 25°C TYP 0.5 µs VRGM tgd ITM= VD=VDRM dIG/dt = 0.1A/µs IH IT= 50mA RGK = 1 KΩ Tj= 25°C MAX 5 mA IL IG=1mA RGK = 1 KΩ Tj= 25°C MAX 6 mA VTM ITM= 0.4A tp= 380µs Tj= 25°C MAX 1.3 V IDRM IRRM VD = VDRM RGK = 1 KΩ VR = VRRM Tj= 25°C MAX 1 µA Tj= 125°C MAX 100 µA dV/dt VD=67%VDRM RGK = 1 KΩ Tj= 125°C MIN tq ITM= 3 x IT(AV) VR =35V dI/dt=10A/µs tp=100µs dV/dt=10V/µs VD= 67%VDRM RGK = 1 KΩ Tj= 125°C MAX 3 x IT(AV) IG = 10mA 25 25 50 200 ORDERING INFORMATION P 01 02 A L PACKAGE : L = SOT23 SCR PLANAR CURRENT SENSITIVITY 2/6 VOLTAGE 100 V/µs µs P01xxxL Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb). P (W) P (W) 0.25 0.25 360 O 0.20 0.20 Rth(j-a) DC 0.15 0.15 = 180 = 120 0.10 = 90 = 60 0.05 = 30 0.00 0.00 0.04 0.08 o o 0.10 o o 0.05 I T(AV)(A) o 0.12 0.16 Tamb (oC) 0.20 Fig.3 : Average on-state current versus tab temperature. 0.00 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(AV) (A) 1.00 0.25 0.20 o = 180 0.15 0.10 Alumine su bst rate: 10 mm*8 mm*0.5mm 0.10 0.05 o tp (s) Tamb ( C) 0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 0.01 1E-3 1E-1 1E +1 1E +0 1 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 o 10.0 9.0 7 8.0 7.0 6 Tj initial = 25 C 5 6.0 Igt 5.0 4.0 4 3 3.0 2.0 1E-2 2 Ih 1 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 1,000 3/6 P01xxxL Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A 2 s) 100 10 I TM (A) Tj initial = 25o C Tj initial o 25 C I TSM 10 Tj max 1 Tj max Vto =0.95 V Rt =0.600 1 I2 t VTM (V) tp(ms) 0.1 1 10 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk=1k ) 5.0 Tj=25 o C 1.0 0.1 Rgk( ) 1 .0 E+0 0 1. 0E+01 1.0 E+ 02 1. 0E+ 03 1 .0 E+0 4 1. 0E+05 1. 0E+ 06 4/6 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 P01xxxL PACKAGE MECHANICAL DATA SOT23 (Plastic) B REF. C Min. Max. Min. Max. A 0.93 1.04 0.036 0.041 B 1.20 1.40 0.047 0.055 A D F G B E J H DIMENSIONS Millimeters Inches C 0.15 D 0.085 0.115 0.006 0.003 0.005 E 0.45 0.60 0.018 0.024 F 0.08 G 0.013 0.10 0.0005 0.004 H 1.90 2.05 0.075 0.081 0.003 I 0.95 1.05 0.037 0.041 J 0.95 1.05 0.037 0.041 K 2.10 2.50 0.083 0.098 L 0.45 0.60 0.018 0.024 M 0.37 0.46 0.015 0.018 N 2.80 3.00 0.110 0.118 N M I L K Weight : 0.007 g FOOT PRINT 5/6 P01xxxL MARKING Type Marking P0102AL P2A P0102BL P0102CL P2B P2C P0102DL P2D P0109AL P0109BL P9A P9B P0109CL P9C P0109DL P0111AL P9D P1A P0111BL P1B P0111CL P0111DL P1C P1D P0115AL P5A P0115BL P0115CL P5B P5C P0115DL P5D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6