SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – FCX491 C FCX591 N1 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 80 V IC=100µA VCEO(sus) 60 V IC=10mA* V(BR)EBO 5 V IE=100µA nA VCB=60V, Collector Cut-Off Currents MAX. ICBO 100 ICES 100 nA VCE=60V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.50 V V IC=500mA, IB=50mA* IC=1A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Collector-Base Breakdown Voltage Cobo 100 100 80 30 IC=1mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 300 150 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT491 datasheet 3 - 86