DS1628/DS3628 Octal TRI-STATEÉ MOS Drivers General Description Features The DS1628/DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems. The drivers’ output (VOH) is specified at 3.4V to provide additional noise immunity required by MOS inputs. A PNP input structure is employed to minimize input currents. The circuit employs Schottky-clamped transistors for high speed. A NOR gate of two inputs, DIS1 and DIS2, controls the TRI-STATE mode. Y Y Y Y Y Y High speed capabilities Ð Typical 5 ns driving 50 pF & 8 ns driving 500 pF TRI-STATE outputs High VOH (3.4V min) High density Ð Eight drivers and two disable controls for TRI-STATE in a 20-pin package PNP inputs reduce DC loading on bus lines Glitch-free power up/down Schematic and Connection Diagrams Dual-In-Line Package Top View TL/F/5875 – 1 (Equivalent Input/Output Circuit) TL/F/5875 – 2 Order Number DS1628J, DS3628J, DS3628N See NS Package Number J20A or N20A Typical Application Truth Table Disable Input DIS 1 DIS 2 H H X L L H X H L L Input Output X X X H L Z Z Z L H H e high level L e low level X e don’t care Z e high impedance (off) TL/F/5875 – 3 TRI-STATEÉ is a registered trademark of National Semiconductor Corp. C1995 National Semiconductor Corporation TL/F/5875 RRD-B30M115/Printed in U. S. A. DS1628/DS3628 Octal TRI-STATE MOS Drivers February 1986 Absolute Maximum Ratings (Note 1) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage Logical ‘‘1’’ Input Voltage Logical ‘‘0’’ Input Voltage Supply voltage (VCC) Temperature (TA) DS1628 DS3628 7.0V 7.0V Min 4.5 Max 5.5 Units V b 55 a 125 a 70 §C §C 0 b 1.5V b 65§ C to a 150§ C Storage Temperature Range Maximum Power Dissipation* at 25§ C Cavity Package 1667 mW Molded Package 1832 mW Lead Temperature (Soldering, 10 seconds) 300§ C *Derate cavity package 11.1 mW/§ C above 25§ C; derate molded package 14.7 mW/§ C above 25§ C. Electrical Characteristics (Notes 2, 3) Symbol Parameter Conditions Min Typ Max Units 0.8 V VIN(1) Logical ‘‘1’’ Input Voltage 2.0 VIN(0) Logical ‘‘0’’ Input Voltage V IIN(1) Logical ‘‘1’’ Input Current VCC e 5.5V VIN e 5.5V 0.1 40 mA IIN(0) Logical ‘‘0’’ Input Current VCC e 5.5V VIN e 5.5V b 180 b 400 mA VCLAMP Input Clamp Voltage VCC e 4.5V IIN e b18 mA b 0.7 b 1.2 V VOH Logical ‘‘1’’ Output Voltage (No Load) VCC e 4.5V, IOH e b10 mA VOL Logical ‘‘0’’ Output Voltage (No Load) VCC e 4.5V, IOL e 10 mA DS1628 VOH Logical ‘‘1’’ Output Voltage (With Load) VCC e 4.5V, IOH e b1.0 mA DS1628 2.5 3.9 V DS3628 2.7 3.9 V VOL Logical ‘‘0’’ Output Voltage (With Load) VCC e 4.5V, IOL e 20 mA DS1628/DS3628 IID Logical ‘‘1’’ Drive Current VCC e 4.5V, VOUT e 0V, (Note 6) IOD Logical ‘‘0’’ Drive Current VCC e 4.5V, VOUT e 4.5V, (Note 6) Hi-Z TRI-STATE Output Current VOUT e 0.4V to 2.4V, DIS1 or DIS2 e 2.0V ICC Power Supply Current VCC e 5.5V DS1628 3.4 4.3 DS3628 3.5 4.3 DS3628 V V 0.25 0.4 0.25 0.35 0.35 0.5 b 150 V V mA 150 b 40 V mA 0.1 40 mA One DIS Input e 3.0V All Other Inputs e X, Outputs at Hi-Z 90 120 mA DIS1, DIS2 e 0V, Others e 3V Outputs on 70 100 mA All Inputs e 0V, Outputs Off 25 50 mA Units Switching Characteristics (VCC e 5V, TA e 25§ C) (Note 6) Symbol tS a b tSb a tF tR Parameter Storage Delay Negative Edge Storage Delay Positive Edge Fall Time Rise Time Conditions (Figure 1 ) (Figure 1 ) (Figure 1 ) (Figure 1 ) Typ Max CL e 50 pF Min 4.0 5.0 CL e 500 pF 6.5 8.0 CL e 50 pF 4.2 5.0 CL e 500 pF 6.5 8.0 CL e 50 pF 4.2 6.0 CL e 500 pF 19 22 CL e 50 pF 5.2 7.0 CL e 500 pF 20 24 ns ns ns ns tZL Delay from Disable Input to Logical ‘‘0’’ Level (from High Impedance State) CL e 50 pF to GND RL e 2 kX to VCC (Figure 2 ) 19 25 ns tZH Delay from Disable Input to Logical ‘‘1’’ Level (from High Impedance State) CL e 50 pF to GND RL e 2 kX to GND (Figure 2 ) 13 20 ns 2 Switching Characteristics Symbol (Continued) (VCC e 5V, TA e 25§ C) (Note 6) Parameter Typ Max Units tLZ Delay from Disable Input to High Impedance State (from Logical ‘‘0’’ Level) CL e 50 pF to GND Conditions RL e 400X to VCC (Figure 3 ) Min 18 25 ns tHZ Delay from Disable Input to High Impedance State (from Logical ‘‘1’’ Level) CL e 50 pF to GND RL e 400X to GND (Figure 3 ) 8.5 15 ns AC Test Circuits and Switching Time Waveforms tS a b, tSb a , tr, tf TL/F/5875 – 5 TL/F/5875 – 4 FIGURE 1 tZL tZH TL/F/5875 – 8 TL/F/5875–6 *ANY ONE OF EIGHT OUTPUTS TL/F/5875 – 7 FIGURE 2 tLZ tHZ TL/F/5875–9 TL/F/5875 – 11 TL/F/5875 – 10 FIGURE 3 Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Unless otherwise specified, min/max limits apply across the b 55§ C to a 125§ C temperature range for the DS1628 and across the 0§ C to a 70§ C range for the DS3628. All typical values are for TA e 25§ C and VCC e 5V. Note 3: All currents into device pins shown as positive; all currents out of device pins shown as negative; all voltages references to ground unless otherwise noted. All values shown as max or min on absolute value basis. Note 4: The pulse generator has the following characteristics: ZOUT e 50X and PRR s 1 mHz. Rise and fall times between 10% and 90% points s 5 ns. Note 5: CL includes probe and jig capacitance. Note 6: When measuring output drive current and switching response for the DS1628 and DS3628 a 15X resistor should be placed in series with each output. 3 DS1628/DS3628 Octal TRI-STATE MOS Drivers Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number DS1628J or DS3628J NS Package Number J20A LIFE SUPPORT POLICY Molded Dual-In-Line Package (N) Order Number DS3628N NS Package Number N20A NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.