TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS (V) –12 rDS(on) () ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS –12 Gate-Source Voltage VGS 8 TA= 25C Continuous Drain Current (TJ = 150C)b TA= 70C Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25C Power Dissipationb TA= 70C Operating Junction and Storage Temperature Range Unit V –0.5 ID –0.39 IDM –3 IS –0.5 A 0.23 PD 0.15 W TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 550 C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2833. A SPICE Model data sheet is available for this product (FaxBack document #5154). Siliconix S-44205—Rev. A, 31-Mar-95 1 New Product TP0101T Limits Parameter Symbol Test Conditions Min Typ V(BR)DSS VGS = 0 V, ID = –10 mA –12 –25 VGS(th) VDS = VGS, ID = –50 mA –0.65 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentc Drain Source On Resistancec Drain-Source On-Resistance Forward Transconductance c Diode Forward Voltage IGSS IDSS ID(on) V VDS = V, VGS = "8 V "100 VDS = –9.6 V, VGS = 0 V –1 TJ = 55C –10 VDS v –5 V, VGS = –4.5 V –2.5 VDS v –5 V, VGS = –2.5 V –0.5 mA A VGS = –4.5 V, ID = –0.5 A 0.45 0.65 VGS = –2.5 V, ID = –0.4 A 0.69 0.85 gfs VDS = –5 V, ID = –0.5 A 1.3 VSD IS = –0.5 A, VGS = 0 V –0.9 –1.2 2020 3000 rDS(on) DS( ) nA W S V Dynamicb Total Gate Charge Qg VDS = –66 V, V VGS =–4.5 45V ID ^ –0.5 0.5 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 720 Input Capacitance Ciss 110 Output Capacitance Coss Reverse Transfer Capacitance Crss 30 td(on) 7 12 25 35 19 30 9 15 VDS = –6 V, VGS = 0, f = 1 MHz 180 pC 80 pF Switchingd Turn-On Time Turn-Off Time tr td(off) –6 W ^ 0.5 W tf Notes ! 3-+%11 .2(%04)1% -.2%$ " .0 -.2 13"*%#2 2. /0.$3#2).- 2%12)-' # 3+1% 2%12 v m1 $325 #5#+% v $ 4)2#()-' 2),% )1 %11%-2)!++5 )-$%/%-$%-2 .& ./%0!2)-' 2%,/%0!230% 2 New Product ns Siliconix S-44205—Rev. A, 31-Mar-95 TP0101T Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 6.0 Transfer Characteristics 2.0 TC = –55C VGS = 5 V 4.5 V I D – Drain Current (A) I D – Drain Current (A) 5.0 4V 4.0 3.5 V 3.0 3V 2.0 2.5 V 1.0 2V 1.5 25C 125C 1.0 0.5 1.5 V 0.5, 1 V 0 0 0 1 2 3 0 4 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 350 4 3 C – Capacitance (pF) rDS(on) – On-Resistance ( ) 300 2 VGS = 2.5 V 1 250 200 150 Ciss 100 VGS = 4.5 V Coss 50 Crss 0 0 0 1 2 3 4 5 0 Gate Charge rDS(on) – On-Resistance ( ) (Normalized) VGS – Gate-to-Source Voltage (V) 1.7 VDS = 6 V ID = 0.5 A 6 5 4 3 2 1 0 0 600 1200 1800 9 12 2400 3000 On-Resistance vs. Junction Temperature 1.5 VGS = 4.5 V ID = 0.5 A 1.3 1.1 0.9 0.7 –50 Qg – Total Gate Charge (nC) Siliconix S-44205—Rev. A, 31-Mar-95 6 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 7 3 0 50 100 150 TJ – Junction Temperature (C) 3 New Product TP0101T Typical Characteristics (25C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 3.0 rDS(on) – On-Resistance ( W ) I S – Source Current (A) 2.5 TJ = 150C 1 TJ = 25C 0.1 2.0 1.5 1.0 ID = 0.5 A 0.5 0.01 0 0 0.5 1.0 1.5 2.0 0 2.5 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.34 1 Single Pulse Power 10 0.24 8 VGS(th) Variance (V) ID = 50 mA Power (W) 0.14 0.04 6 4 TC = 25C Single Pulse 2 –0.06 –0.16 –50 0 0 50 100 150 0.001 0.01 TJ – Temperature (C) 0.1 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) 4 New Product Siliconix S-44205—Rev. A, 31-Mar-95 100