TEMIC SI9945DY

Si9945DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
rDS(on) ()
ID (A)
@ VGS = V
@ VGS = V
D1 D1
D2 D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25C
Maximum Power Dissipationa
TA = 70C
Operating Junction and Storage Temperature Range
V
TA = 25C
TA = 70C
Unit
ID
2.6
IDM
10
IS
1.7
A
2.0
PD
1.3
W
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
RthJA
62.5
C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70133.
A SPICE Model data sheet is available for this product (FaxBack document #70516).
Siliconix
S-47958—Rev. G, 15-Apr-96
1
Si9945DY
Specifications (TJ = 25C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
rDS(on)
Typa
Max
Unit
Static
Gate Threshold Voltage
Forward Transconductance b
Diode Forward
Voltageb
V
"100
VDS = V, VGS = 0 V
1
VDS = V, VGS = 0 V, TJ = 55C
25
VDS w 5 V, VGS = V
10
nA
mA
A
VGS = V, ID = A
VGS = V, ID = A
gfs
VDS = 15 V, ID = A
7.0
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
15
30
W
S
V
Dynamica
Total Gate Charge
Qg
VDS = 30 V, VGS = V, ID = A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.5
Turn-On Delay Time
td(on)
9
25
10
30
25
50
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = 30 V,, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
2.1
14
40
70
100
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
2
Siliconix
S-47958—Rev. G, 15-Apr-96
Si9945DY
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
20
20
12
5V
8
4
25C
16
I D – Drain Current (A)
I D – Drain Current (A)
TC = –55C
VGS = 9, 8, 7, 6 V
16
4V
12
125C
8
4
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
On-Resistance vs. Drain Current
5
6
7
Capacitance
1000
0.4
800
C – Capacitance (pF)
rDS(on) – On-Resistance ( )
4
VGS – Gate-to-Source Voltage (V)
0.5
0.3
VGS = 4.5 V
0.2
VGS = 10 V
0.1
3
600
Ciss
400
200
Coss
Crss
0
0
0
2
4
6
8
10
0
ID – Drain Current (A)
8
6
4
2
0
3
30
40
50
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.3 A
rDS(on) – On-Resistance ( )
(Normalized)
VGS – Gate-to-Source Voltage (V)
2.0
VDS = 60 V
ID = 0.4 A
0
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
10
6
9
12
Qg – Total Gate Charge (nC)
Siliconix
S-47958—Rev. G, 15-Apr-96
15
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
3
Si9945DY
Typical Characteristics (25C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
rDS(on) – On-Resistance ( W )
I S – Source Current (A)
0.25
10
TJ = 150C
TJ = 25C
0.20
0.15
ID = 3.3 A
0.10
0.05
1
0
0
0.4
0.8
1.2
1.6
0
2.0
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
1.0
2
200
Single Pulse Power
160
ID = 250 mA
Power (W)
VGS(th) Variance (V)
0.5
0.0
120
80
–0.5
40
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.001
0.010
0.100
TJ – Temperature (C)
1.0
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
10–4
10–3
10–2
4. Surface Mounted
10–1
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-47958—Rev. G, 15-Apr-96