TEMIC SI9947DY

Si9947DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
–20
rDS(on) ()
ID (A)
0.10 @ VGS = –10 V
3.5
0.19 @ VGS = –4.5 V
2.5
Recommended upgrade: Si4947DY or Si4953DY
Lower profile/smaller size—see LITE FOOT equivalent: Si6955DQ
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Top View
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25C
Maximum Power Dissipationa
TA = 70C
Operating Junction and Storage Temperature Range
ID
Unit
V
3.5
2.5
IDM
10
IS
–1.7
A
2.0
PD
1.3
W
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
RthJA
62.5
C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134.
A SPICE Model data sheet is available for this product (FaxBack document #70636).
Siliconix
S-47958—Rev. F, 15-Apr-96
1
Si9947DY
Specifications (TJ = 25C Unless Otherwise Noted)
Parameter
Typa
Symbol
Test Condition
Min
Max
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
IDSS
VDS = –16 V, VGS = 0 V
–1
Zero Gate Voltage Drain Current
VDS = –10 V, VGS = 0 V, TJ = 70C
–5
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
rDS(on)
Unit
Static
Gate Threshold Voltage
Forward Transconductance b
Diode Forward Voltageb
VDS v –5 V, VGS = –10 V
–14
VDS v –5 V, VGS = –4.5 V
–2.5
V
nA
mA
A
VGS = –10 V, ID = 3.5 A
0.10
VGS = –4.5 V, ID = 2 A
0.19
gfs
VDS = –15 V, ID = –3.5 A
4.0
VSD
IS = –1.7 A, VGS = 0 V
–0.9
–1.2
13
30
W
S
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –10 V, ID = –3.5 A
nC
2
Gate-Drain Charge
Qgd
5
Turn-On Delay Time
td(on)
21
40
12
25
12
30
11
20
50
100
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = –10 V,, RL = 10 W
ID ^ –11 A,
A VGEN = –10
10 V,
V RG = 6 W
IF = –3.5 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
2
Siliconix
S-47958—Rev. F, 15-Apr-96
Si9947DY
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
10
10
VGS = 10, 9, 8, 7, 6, 5 V
4V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4
3V
2
6
4
TC = 125C
2
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
2
0.24
1500
C – Capacitance (pF)
rDS(on) – On-Resistance ( )
2000
VGS = 4.5 V
VGS = 10 V
0.08
4
5
Capacitance
0.32
0.16
3
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1000
Ciss
500
Coss
0
Crss
0
0
2
4
6
8
10
0
Gate Charge
10
1.4
VDS = 10 V
ID = 3.5 A
rDS(on) – On-Resistance ( )
(Normalized)
6
4
2
0
2
4
8
12
16
20
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.5 A
8
0
4
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
VGS – Gate-to-Source Voltage (V)
–55C
25C
2V
6
8
10
Qg – Total Gate Charge (nC)
Siliconix
S-47958—Rev. F, 15-Apr-96
12
14
1.2
1.0
0.8
0.6
–50
0
50
100
150
TJ – Junction Temperature (C)
3
Si9947DY
Typical Characteristics (25C Unless Otherwise Noted)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.32
TJ = 150C
rDS(on) – On-Resistance ( W )
I S – Source Current (A)
0.28
TJ = 25C
0.24
0.20
0.16
ID = 3.5 A
0.12
0.08
0.04
0
1
0
0.5
1.0
1.5
0
2.0
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
1.0
2
25
Single Pulse Power
ID = 250 mA
20
Power (W)
VGS(th) Variance (V)
0.5
0.0
15
10
–0.5
5
–1
–50
0
50
100
0
10–2
150
TJ – Temperature (C)
10–1
1
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-47958—Rev. F, 15-Apr-96