TOSHIBA TPCA8102

TPCA8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8102
Lithium Ion Battery Applications
Notebook PC Applications
0.5±0.1
Unit: mm
Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.)
High forward transfer admittance: |Yfs| = 60S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
•
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
4
5.0±0.2
0.05 S
S
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
±20
(Note 1)
ID
− 40
Pulsed (Note 1)
IDP
−120
PD
45
PD
4
4.25±0.2
8
5 0.8±0.1
JEDEC
―
W
JEITA
―
2.8
W
TOSHIBA
PD
1.6
W
EAS
208
mJ
IAR
− 40
A
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain power dissipation
(Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
A
1,2,3:SOURCE
4:GATE
5,6,7,8:DRAIN
V
A
0.595
3.5±0.2
Rating
0.6±0.1
1
Symbol
Drain current
0.15±0.05
1
Maximum Ratings (Ta = 25°C)
DC
0.05 M A
5
0.166±0.05
6.0±0.3
•
•
Characteristics
0.4±0.1
5.0±0.2
Small footprint due to small and thin package
0.95±0.05
•
1.27
8
1.1±0.2
Portable Equipment Applications
2-5Q1A
Weight: 0.076 g (typ.)
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
Circuit Configuration
8
7
6
5
1
2
3
4
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2003-08-29
TPCA8102
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25℃)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-c)
2.78
°C/W
Rth (ch-a)
44.6
°C/W
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
TPCA
8102
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
(a)
Note 3: VDD = 24 V,Tch = 25°C (initial),L = 100μH,RG = 25 Ω,IAR = − 40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ○ on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2003-08-29
TPCA8102
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
⎯
⎯
Vth
VDS = −10 V, ID = − 1 mA
−0.8
⎯
−2.0
VGS = −4 V, ID = −20 A
⎯
9.0
14
VGS = −10 V, ID = −20 A
⎯
4.5
6.0
VDS = −10 V, ID = −20 A
30
60
⎯
⎯
4600
⎯
⎯
850
⎯
⎯
980
⎯
⎯
10
⎯
⎯
20
⎯
⎯
78
⎯
⎯
220
⎯
⎯
109
⎯
⎯
24
⎯
⎯
25
⎯
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-ON time
ton
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
Switching time
Fall time
tf
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
ID = −20A
VOUT
RL = 0.75 Ω
Gate threshold voltage
4.7 Ω
Drain-source breakdown voltage
VDD ∼
− −15 V
<
Duty = 1%, tw = 10 µs
VDD ∼
− −24 V, VGS = 10 V,
ID = −40 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−120
A
⎯
⎯
1.2
V
VDSF
IDR = −40 A, VGS = 0 V
3
2003-08-29
TPCA8102
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2003-08-29