TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 4 5.0±0.2 0.05 S S Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 (Note 1) ID − 40 Pulsed (Note 1) IDP −120 PD 45 PD 4 4.25±0.2 8 5 0.8±0.1 JEDEC ― W JEITA ― 2.8 W TOSHIBA PD 1.6 W EAS 208 mJ IAR − 40 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) A 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN V A 0.595 3.5±0.2 Rating 0.6±0.1 1 Symbol Drain current 0.15±0.05 1 Maximum Ratings (Ta = 25°C) DC 0.05 M A 5 0.166±0.05 6.0±0.3 • • Characteristics 0.4±0.1 5.0±0.2 Small footprint due to small and thin package 0.95±0.05 • 1.27 8 1.1±0.2 Portable Equipment Applications 2-5Q1A Weight: 0.076 g (typ.) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. Circuit Configuration 8 7 6 5 1 2 3 4 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-08-29 TPCA8102 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8102 Type ※ Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V，Tch = 25°C (initial)，L = 100μH，RG = 25 Ω，IAR = − 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ○ on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-08-29 TPCA8102 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 VGS = −4 V, ID = −20 A ⎯ 9.0 14 VGS = −10 V, ID = −20 A ⎯ 4.5 6.0 VDS = −10 V, ID = −20 A 30 60 ⎯ ⎯ 4600 ⎯ ⎯ 850 ⎯ ⎯ 980 ⎯ ⎯ 10 ⎯ ⎯ 20 ⎯ ⎯ 78 ⎯ ⎯ 220 ⎯ ⎯ 109 ⎯ ⎯ 24 ⎯ ⎯ 25 ⎯ Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-ON time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −20A VOUT RL = 0.75 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage VDD ∼ − −15 V < Duty = 1%, tw = 10 µs VDD ∼ − −24 V, VGS = 10 V, ID = −40 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −120 A ⎯ ⎯ 1.2 V VDSF IDR = −40 A, VGS = 0 V 3 2003-08-29 TPCA8102 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2003-08-29