ETC UM5K1NTR

UM5K1N
Transistors
Small switching (30V, 0.1A)
UM5K1N
!Equivalent circuit
(4)
(1) Tr1 Gate
(2) Source
(3) Tr2 Gate
(4) Tr2 Drain
(6) Tr1 Drain
∗ A protection diode has been built in between
the gate and the source to protect against
static electricity when the product is in use.
Use the protection circuit when rated
voltagesare exceeded.
∗
∗
Gate
Protection
Diode
(1)
Gate
Protection
Diode
(2)
(3)
!Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
UM5K1N
Taping
TR
3000
0to0.1
0.1Min.
!Structure
Silicon N-channel
MOSFET
Tr2
1.3
2.0
0.9
(3)
(2)
(1)
(6)
2.1
ROHM : UMT5
E I A J : SC-88A
Tr1
0.65 0.65
(4)
0.2
1.25
!Applications
Interfacing, switching (30V, 100mA)
(6)
0.7
!External dimensions (Units : mm)
0.15
!Features
1) Two 2SK3018 transistors in a single UMT package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
5) Easily designed drive circuits.
Each lead has same dimensions
Abbreviated symbol : K1
UM5K1N
Transistors
!Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
100
mA
Pulsed
IDP∗1
200
mA
Continuous
IDR
100
mA
Pulsed
IDRP∗1
200
mA
Total power dissipation (Tc=25˚C)
PD∗2
150
mW
Channel temperature
Tch
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
Drain current
Reverse drain
current
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
Drain-source breakdown voltage
V(BR)DSS
30
−
−
V
ID=10µA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
1.0
µA
VDS=30V, VGS=0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS=3V, ID=100µA
Static drain-source on-stage
resistance
RDS(on)
−
5
8
Ω
ID=10mA, VGS=4V
RDS(on)
−
7
13
Ω
ID=1mA, VGS=2.5V
Forward transfer admittance
Yfs
20
−
−
mS
ID=10mA, VDS=3V
Input capacitance
Ciss
−
13
−
pF
VDS=5V
Output capacitance
Coss
−
9
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
4
−
pF
f=1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID=10mA, VDD 5V
Parameter
Gate-source leakage
tr
−
35
−
ns
VGS=5V
td(off)
−
80
−
ns
RL=500Ω
tr
−
80
−
ns
RGS=10Ω
Rise time
Turn-off delay time
Test Conditions
VGS=±20V, VDS=0V
Fall time
0.15
200m
3V
100m
Ta=25˚C
Pulsed
3.5V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
0.1
2.5V
0.05
2V
1
2
3
VDS=3V
Pulsed
50m
20m
10m
5m
2m
Ta=125˚C
75˚C
25˚C
−25˚C
1m
0.5m
0.2m
VGS=1.5V
0
0
GATE THRESHOLD VOLTAGE : VGS (th) (V)
!Electrical characteristic curves
4
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
2
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25
0
25
50
75
100
125 150
CHANNEL TEMPERATURE : Tch (˚C)
Fig.3 Gate threshold voltage vs.
channel temperature
UM5K1N
Transistors
50
Ta=125˚C
75˚C
25˚C
−25˚C
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
20
10
5
2
1
0.5
0.001 0.002
0.5
DRAIN CURRENT : ID (A)
0.05
0.1
ID=50mA
4
3
2
Ta=−25˚C
25˚C
75˚C
125˚C
0.1
0.05
0.02
0.01
0.005
0.002
0
−50 −25
0.001
0.0001 0.0002
25
50
75
100 125
150
0.0005 0.001 0.002
50
CAPACITANCE : C (pF)
20m
0V
VGS=4V
5m
2m
1m
0.5m
0.05 0.1 0.2
10
Coss
Crss
2
20
VGS=0V
Pulsed
50m
20m
Ta=125˚C
75˚C
25˚C
−25˚C
10m
5m
2m
1m
0.5m
0.2m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Ciss
5
15
0.1m
0.5
Fig.9 Reverse drain current vs.
source-drain voltage ( I )
1000
Ta=25˚C
f=1MHZ
VGS=0V
20
50m
10
100m
Fig.8 Forward transfer
admittance vs. drain current
Ta=25˚C
Pulsed
100m
0.005 0.01 0.02
5
200m
DRAIN CURRENT : ID (A)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
200m
ID=0.05A
Fig.6 Static drain-source on-state
resistance vs.
gate-source voltage
VDS=3V
Pulsed
1
0
ID=0.1A
GATE-SOURCE VOLTAGE : VGS (V)
1
Ta=25˚C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITCHING TIME : t (ns)
ID=100mA
6
5
5
0.5
0.2
7
10m
0.2
0.5
VGS=4V
Pulsed
CHANNEL TEMPERATURE : Tch (˚C)
REVERSE DRAIN CURRENT : IDR (A)
0.02
Fig.5 Static drain-source on-state
resistance vs. drain current ( II )
FORWARD TRANSFER
ADMITTANCE : Yfs (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
9
0.01
10
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current ( I )
8
0.005
Ta=25˚C
Pulsed
0
0
REVERSE DRAIN CURRENT : IDR (A)
20
15
VGS=2.5V
Pulsed
Ta=125˚C
75˚C
25˚C
−25˚C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
50
td (off)
200
100
50
20
tr
td (on)
10
5
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage ( II )
0.5
0.1
0.2
0.5
1
2
5
10
20
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurment circuit and
resultant waveforms)
UM5K1N
Transistors
!Switching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms