4V Drive Nch MOS FET RSR020N06 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) . 0.3~0.6 0~0.1 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : PZ (3) Drain zApplication Switching zInner circuit (3) (3) zPackaging specifications Package Type Taping TL Code Basic ordering unit (pieces) ∗2 (1) (1) (2) 3000 RSR020N06 ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Range of channel temperature Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 60 ±20 ±2 ±8 0.8 8 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board. zThermal resistance Parameter Channel to ambient Unit ∗2 When mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A RSR020N06 Data Sheet zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 60 − 1.0 − − − 1.3 − − − − − − − − − − − − − − 120 140 150 − 180 50 22 6 10 20 6 2.7 1.0 0.6 ±10 − 1 2.5 170 195 210 − − − − − − − − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=2A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4V VDS=10V, ID=2A VDS=10V VGS=0V f=1MHz VDD 30V, ID=1A VGS=10V RL 30Ω RG=10Ω VDD 30V ID=2A, VGS=5V RL 15Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol Min. VSD ∗ − Typ. − Max. 1.2 Unit V Conditions IS=2A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.A RSR020N06 Data Sheet zElectrical characteristic curves VGS= 2.8V 2 1 10 Ta=25°C Pulsed 3 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 2 1 DRAIN CURRENT : ID [A] 3 4 Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 4 VGS= 2.4V VGS= 2.2V VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C 0.1 Ta= 25°C Ta= - 25°C 0.01 VGS= 2.4V 0 0 0.4 0.6 0.8 0.001 0 1 2 Fig.1 Typical Output Characteristics(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 100 VGS= 4.0V VGS= 4.5V VGS= 10V 0.1 1 0.1 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 3 0.1 1 10 DRAIN-CURRENT : ID [A] Ta= -25°C Ta=25°C Ta=75°C Ta=125°C DRAIN-CURRENT : ID [A] 2.5 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1 1 2 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1.5 100 10 0.01 10 VDS= 10V Pulsed 0.1 0.01 1 VGS= 4.5V Pulsed DRAIN-CURRENT : ID [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 1 0.5 Fig.3 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 10 VGS= 4.0V Pulsed 0.1 0 GATE-SOURCE VOLTAGE : VGS[V] 100 DRAIN-CURRENT : ID [A] 10 0.01 10 VGS= 10V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1000 8 Fig.2 Typical Output Characteristics(Ⅱ) Ta= 25°C Pulsed 10 0.01 6 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] 1000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0.2 REVERSE DRAIN CURRENT : Is [A] 0 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.06 - Rev.A RSR020N06 Data Sheet 1000 400 ID = 1.0A 300 ID = 2.0A 200 tf 100 10 100 tr td (on) 1 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS[V] 1000 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD = 30V 8 ID = 2.0A RG=10Ω Pulsed 6 4 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID [A] 1 2 3 4 5 TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] 10 Ta=25°C VDD = 30V VGS=10V RG=10Ω Pulsed td (off) GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 500 Fig.12 Dynamic Input Characteristics Ciss 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit VG VGS ID VDS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate charge waveform 4/4 2009.06 - Rev.A