2SC5585 / 2SC5663 Transistors Low frequency transistor (50V, 2A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. !External dimensions (Units : mm) !Applications For switching For muting 0.3 1.6 1.0 0.2 (2) (3) 0.8 !Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA 0.5 0.5 (1) 0.2 2SC5585 0.1Min. Abbreviated symbol : BX 1.2 0.8 1.2 0.32 0.2 (1) Emitter (2) Base (3) Collector 0.2 (2) (3) 0.8 2SC5663 0.4 0.4 ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 0.7 0~0.1 0.55 0.15 1.6 0.13 0~0.1 ROHM : VMT3 !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collectot-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V IC 500 mA Parameter Collector current Collector power dissipation ∗ ICP 1 A PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ Single pulse Pw = 1ms !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 15 − − V IC = 10µA Collectoe-emitter brakdown voltage BVCEO 12 − − V IC = 1mA Emitter-base breakdown voltage BVEBO 6 − − V IE = 10µA ICBO − − 100 nA VCB = 15V VCE(sat) − 90 250 mV IC/IB = 200mA/10mA VCE = 2V, IC = 10mA Collector cutoff current Collector-emitter saturation voltage hFE 270 − 680 − Transition frequency fT − 320 − MHz Output capacitance Cob − 7.5 − pF DC current transfer ratio Conditions VCE = 2V, IE = −10mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz 0.22 0.5 (1) 0.15Max. Abbreviated symbol : BX (1) Base (2) Emitter (3) Collector 2SC5585 / 2SC5663 Transistors !Packaging specifications Package Taping TL T2L 3000 8000 Code Basic ordering unit (pieces) hFE Type − 2SC5585 − 2SC5663 1000 VCE = 2V DC CURRENT GAIN : hFE 200 100 -40°C 5°C 10 25°C 50 20 5 -40°C 100 50 20 10 5 2 1 1 0.5 1.0 1.5 25°C 200 2 0 1 2 200 100 50 IC/IB = 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 500 1000 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage IC/IB = 20 500 200 100 50 Ta = 125°C 25°C 20 -40°C 10 5 2 1 1 2 10000 50 100 200 500 1000 VCE = 2V Ta = 25°C 200 Pulsed 25°C 125°C 100 1000 500 200 50 20 100 10 50 5 20 2 10 20 500 Ta = -40°C 2000 10 1000 IC/IB = 20 5000 5 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) 1 1 2 5 10 20 50 100 200 500 1000 Fig.5 Base-emitter saturation voltage vs. collector current IE = 0A f = 1MHz Ta = 25°C 500 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 20 fT (MHZ) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta = 25°C 500 10 10 Fig.2 DC current gain vs. collector current Fig.1 Grounded emitter propagation characteristics 20 5 1000 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) 1000 VCE = 2V Ta = 125°C 500 500 Ta = 1 2 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage