QST6 Transistors Low frequency amplifier QST6 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 2.8 2.9 0.85 0.16 1) A collector current is large. 2) VCE(sat) < = − 180mV At I C = − 1A / IB = − 50mA (3) (2) 0.4 !Features (4) (5) (6) (1) 1.6 Each lead has same dimensions Abbreviated symbol : T06 !Equivalent circuit !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Limits −15 −12 −6 −2 −4 500 150 −55~+150 Unit V V V A A∗1 mW∗2 °C °C (6) (5) (4) (1) (2) (3) ∗1 Single pulse, PW=1ms ∗2 Each Termminal Mounted on a Recommended !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −100 − 360 15 Max. − − − −100 −100 −180 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−15V VEB=−6V IC=−1A, IB=−50mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz ∗ Pulsed 1/2 QST6 Transistors !Packaging specifications Package Type Taping Code TR Basic ordering unit (pieces) 3000 QST6 25°C −40°C 100 VCE=−2V PULSED 10 −0.001 −0.01 −0.1 −1 −10 10 VBE(sat) 1 Ta=−40°C Ta=25°C Ta=100°C 0.1 Ta=100°C Ta=25°C Ta=−40°C 0.01 IC/IB=20 PULSED 0.001 0.001 −10 1 10 −1 Ta=100°C 25°C −40°C −0.1 −0.01 VCE=−2V Ta=25°C PULSED −0.5 0 IC/IB=50 20 10 −0.01 −0.001 −0.001 −1 BASE TO EMITTER CURRENT : VBE (V) Fig.4 Grounded emitter propagation characteristics −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs.collector current 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 0.1 −0.1 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current Fig1. DC current gain vs.collector current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.01 Ta=25°C PULSED COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −0.001 VCE(sat) −1 1000 Ta=25°C VCE=−2V PULSED SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves 100 100 tstg tdon tf 10 Ta=25°C tr PULSED IC=20 IB1=−20 IB=2 10 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs.emitter current 10 1 −0.001 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 1000 Ta=25°C IE=0A f=1MHz 100 Cib 10 1 −0.1 Cob −1 −10 −100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig7. Collector output capacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage 2/2