ETC 5962

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add Appendix A for Die. Add RHA requirements. Add t9 timing measurement details
to table I. - CFS
03-04-23
Thomas M. Hess
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REV STATUS
OF SHEETS
PREPARED BY
PMIC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
Thanh V. Nguyen
STANDARD
MICROCIRCUIT
DRAWING
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Charles Saffle
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DRAWING APPROVAL DATE
MICROCIRCUIT, DIGITAL, 32-BIT SPARC
PROCESSOR, MONOLITHIC SILICON
01-08-02
REVISION LEVEL
SIZE
A
CAGE CODE
A
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-00540
67268
1
OF
52
5962-E284-03
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
Federal
stock class
designator
\
00540
RHA
designator
(see 1.2.1)
01
Q
X
X
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
Frequency
01
TSC695F
32-bit SPARC processor
25 MHz
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
Package style
256
Ceramic quad flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage range (VDD)..........................................................................
Input voltage range (VIN)..............................................................................
Output current (IOUT) ....................................................................................
Maximum power dissipation (continuous) (PD) ............................................
Storage temperature range (TSTG) ...............................................................
Lead temperature (soldering, 10 seconds) ..................................................
Thermal resistance, junction-to-case (ΘJC)..................................................
Junction temperature (TJ) ............................................................................
-0.5 V dc to +7.0 V dc 2/
-0.5 V dc to VDD +0.5 V dc 3/
50 mA 4/
1.5 W
-65°C to +150°C
+265°C 5/
3°C/W
+165°C
1.4 Recommended operating conditions.
Operating supply voltage range (VDD) .......................................................... +4.5 V dc to +5.5 V dc
Case operating temperature range (TC) ...................................................... -55°C to +125°C
1.5 Radiation features.
5
Maximum total dose (dose rate = 0.1 rads (Si)/s)........................................ 1.0 x 10 rads (Si)
Single event phenomenon (SEP) effective linear energy threshold (LET)
with no upset............................................................................................. error rate 1.5E-8 devices/day
2
with no latchup.......................................................................................... > 100 MeV-cm /mg
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
____________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Device is functional from +4.5 V to +5.5 V with reference to ground.
3/ (VDD + 0.5 V) should not exceed +7.0 V.
4/ This is the maximum current of any single output.
5/ Duration 10 seconds maximum at a distance not less than 1.5 mm from the device body, and the same lead shall not be
resoldered until 3 minutes have elapsed.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
3
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents which are DOD adopted are those listed in the issue of the DODISS
cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the
documents cited in the solicitation.
INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE)
IEEE Standard 1149.1 - IEEE Standard Test Access Port and Boundary Scan Architecture.
(Applications for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 Hoes Lane,
Piscataway, NJ 08854-4150.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute
the documents. These documents may also be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Block diagram. The block diagram shall be as specified on figure 3.
3.2.4 Boundary scan instruction codes. The boundary scan instruction codes shall be as specified on figure 4.
3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5.
3.2.6 Radiation exposure connections. The radiation exposure connections shall be as specified on figure 6.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
4
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 132 (see MIL-PRF-38535, appendix A).
3.11 IEEE 1149.1 compliance. These devices shall be compliant to IEEE 1149.1.
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1015.
(2)
TA = +125°C, minimum.
Interim and final electrical test parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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SHEET
5
TABLE IA. Electrical performance characteristics.
Test
High level input voltage
Symbol
Conditions 1/
-55°C ≤ TC ≤ +125°C
+4.5 V ≤ VDD ≤ +5.5 V
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits
Min
Max
V
VIH
VDD = 5.5 V
2/
3/
1, 2, 3
All
2.2
VIHCR
VDD = 5.5 V
2/
4/
1, 2, 3
All
3.0
Low level input voltage
VIL
VDD = 5.5 V
2/
3/
1, 2, 3
All
High level output voltage
VOH
1, 2, 3
All
2.4
1, 2, 3
All
2.4
1, 2, 3
All
0.4
1, 2, 3
All
0.4
1, 2, 3
All
10
µA
1, 2, 3
All
10
µA
1, 2, 3
All
350
1, 2, 3
All
10
µA
1, 2, 3
All
10
µA
4/
VDD =4.5 V, IOH = -6.0 mA
5/
0.8
V
V
Minimum and maximum values
recorded
VOHB
VDD =4.5 V, IOH = -16.0 mA
6/
Minimum and maximum values
recorded
Low level output voltage
VOL
VDD =4.5 V, IOL = 4.0 mA
5/
V
Minimum and maximum values
recorded
VOLB
VDD =4.5 V, IOL = 12.0 mA
6/
Minimum and maximum values
recorded
High level input current
IIH
Low level input current
IIL
VDD = 5.5 V, VIN = VDD
7/
VDD = 5.5 V, VIN = 0.0 V
8/
IILT
VDD = 5.5 V, VIN = 0.0 V
9/
Three-state leakage
current
IOZH
VDD = 5.5 V, VIN = VDD
Three-state leakage
current
IOZL
VDD = 5.5 V, VIN = 0.0 V
Supply current (idle)
IVDD pins
IDDIDLE
VDD = 5.5 V, f = 25 MHz
1, 2, 3
All
41
mA
Supply current (internal)
IVDD pins
IDDIN
VDD = 5.5 V, f = 25 MHz
1, 2, 3
All
230
mA
Input capacitance
CIN
VIN = 2.5 V
TC = 25°C
fIN = 1.0 MHz
See 4.4.1c
4
All
10
pF
7, 8
All
Functional test
10/
10/
VIL = 0.0 V, VIH = 3.0 V
VOL = 1.45 V, VOH = 1.55 V
VDD = 4.5 V, 5.0 V, and 5.5 V
f = 25 MHz
See 4.4.1b
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
6
TABLE IA. Electrical performance characteristics - Continued.
Test
CLK2 period
Symbol
11/
t1
Conditions 1/
-55°C ≤ TC ≤ +125°C
+4.5 V ≤ VDD ≤ +5.5 V
unless otherwise specified
VDD = 4.5 V
SYSCLK frequency = 25 MHz
See figure 5
Group A
subgroups
Device
type
Unit
Limits
Min
Max
9, 10, 11
All
20
ns
9, 10, 11
All
40
ns
t3
9, 10, 11
All
9.75
ns
RA[31:0], RAPAR, RSIZE,
RLDSTO, and LOCK
output delay 12/
t4
9, 10, 11
All
6.5
ns
MEMCS[9 : 0] , ROMCS ,
t5
9, 10, 11
All
12.5
ns
DDIR, DDIR output delay
11/ 12/
t6
9, 10, 11
All
15
ns
MEMWR and IOMWR
output delay 12/ 13/
t7
9, 10, 11
All
23.5
ns
OE (HL) output delay 12/
t8
9, 10, 11
All
20.5
ns
Data setup time during load
12/
t9
9, 10, 11
All
SYSCLK period 11/
t2
CLK2 high and how pulse
width 11/
EXMCS output delay
11/ 12/
VDD = 4.5 V 11/
SYSCLK frequency = 25 MHz
See figure 5
9
VDD = 4.5 V
SYSCLK frequency = 25 MHz
NOPAR = 0
rpa = rec = either 0 or 1
See figure 5
Data hold time during load
11/ 12/
t10
Data output delay
t11
13/
VDD = 4.5 V
SYSCLK frequency = 25 MHz
See figure 5
ns
11.5
9, 10, 11
All
9, 10, 11
All
5
ns
28
Data output valid 11/ 12/
t12
9, 10, 11
All
CB output delay 11/ 12/
t13
9, 10, 11
All
19
ns
ALE output delay 11/ 13/
t14
9, 10, 11
All
13
ns
BUFFEN (HL) output
delay 11/ 12/
t15
9, 10, 11
All
21
ns
MHOLD output delay
11/ 12/
t16
9, 10, 11
All
12
ns
MDS , DRDY output delay
11/ 12/
t17
9, 10, 11
All
15
ns
MEXC output delay 11/
t20
9, 10, 11
All
15
ns
t21
9, 10, 11
All
13/
RASI[3:0], RSIZE[1:0],
RASPAR setup time
11/ 12/
8
ns
ns
10
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
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REVISION LEVEL
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SHEET
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TABLE IA. Electrical performance characteristics - Continued.
Test
Symbol
RASI[3:0], RSIZE[1:0],
RASPAR hold time
11/ 12/
t22
BOOT PROM address
output delay 11/ 12/
Conditions 1/
-55°C ≤ TC ≤ +125°C
+4.5 V ≤ VDD ≤ +5.5 V
unless otherwise specified
VDD = 4.5 V
SYSCLK frequency = 25 MHz
See figure 5
Group A
subgroups
Device
type
Unit
Limits
Min
Max
9, 10, 11
All
t23
9, 10, 11
All
BUSRDY setup time
11/ 12/
t24
9, 10, 11
All
12
ns
BUSRDY hold time
t25
9, 10, 11
All
0
ns
IOSEL output delay 11/ 12/
t27
9, 10, 11
All
DMAAS setup time 11/
t28
9, 10, 11
All
t29
9, 10, 11
DMAREQ setup time
11/ 12/
t30
DMAGNT output delay
11/ 12/
11/
3
ns
13
ns
12/
15
ns
12
20
ns
All
0
20
ns
9, 10, 11
All
12
t31
9, 10, 11
All
RA[31:0], RAPAR, CPAR
setup time 11/ 12/
t32
9, 10, 11
All
10
ns
RA[31:0], RAPAR, CPAR
hold time 11/ 12/
t33
9, 10, 11
All
3
ns
TCK period 11/
12/
DMAAS hold time 11/
13/
ns
15
ns
t36
9, 10, 11
All
100
ns
TMS setup time 11/
14/
t37
9, 10, 11
All
10
ns
TMS hold time 11/
14/
t38
9, 10, 11
All
4
ns
TDI setup time 11/
14/
t39
9, 10, 11
All
10
ns
t40
9, 10, 11
All
10
t41
9, 10, 11
All
20
ns
t46
9, 10, 11
All
22
ns
RESET , CPUHALT
output delay 11/ 12/
t48
9, 10, 11
All
22
ns
SYSERR , SYSAV output
delay 11/ 12/
t49
9, 10, 11
All
20
ns
IUERR output delay 11/ 12/
t50
9, 10, 11
All
20
ns
EXTINT[4:0] setup time
11/ 13/
t52
9, 10, 11
All
12
ns
EXTINT[4:0] hold time
t53
9, 10, 11
All
0
ns
t54
9, 10, 11
All
TDI hold time 11/
14/
TDO output delay 11/
15/
INULL output delay 11/
11/
12/
ns
12/
EXTINTACK output delay
11/ 12/
15
ns
See footnotes at end of table.
STANDARD
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REVISION LEVEL
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TABLE IA. Electrical performance characteristics - Continued.
Test
Symbol
OE (LH) output delay (no
DMA mode) 11/ 12/
t56
BUFFEN (LH) output delay
11/ 12/
INST output delay 11/
12/
Data output delay to low-Z
11/
12/
Conditions 1/
-55°C ≤ TC ≤ +125°C
+4.5 V ≤ VDD ≤ +5.5 V
unless otherwise specified
VDD = 4.5 V
SYSCLK frequency = 25 MHz
See figure 5
Group A
subgroups
Device
type
Unit
Limits
Min
Max
9, 10, 11
All
8.5
ns
t57
9, 10, 11
All
9
ns
t60
9, 10, 11
All
22
ns
t61
9, 10, 11
All
20
ns
1/
RHA devices supplied to this drawing are characterized at all levels M, D, P, L, and R of irradiation. However, this device
is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in table IA. When
performing post irradiation electrical measurements for any RHA level, TA = +25°C.
2/
Not recorded – Tested go/no-go during functional test.
3/
Applies to RA[31:0], RAPAR, RASI[3:0], RSIZE[1:0], RASPAR, CPAR, D[31:0], CB[6:0], DPAR, RLDSTO, DXFER, LOCK,
RD, WE , WRT, PROM8 , ROMWRT , BUSRDY , BUSERR , DMAREQ , DMAAS, SYSHALT , NOPAR , IWDE,
WDCLK, CLK2, TMODE[1:0], DEBUG, TCK, TRST , TMS, TDI.
4/
Applies to RxA, RxB, GPI[7:0], EXTINT[4:0], EWDINT, SYSRESET .
5/
Applies to RAPAR, RASI[3:0], RSIZE[1:0], RASPAR, CPAR, D[31:0], CB[6:0], DPAR, RLDSTO, ALE , DXFER, LOCK,
RD, WE , WRT, MHOLD , MDS , MEXC , BA[1:0], ROMCS , MEMCS[9 : 0] , BUFFEN , DDIR, DDIR , IOSEL[3 : 0] ,
IOWR , EXMCS , DMAGNT , DRDY , IUERR , CPUHALT , SYSERR , SYSAV, INULL, INST, FLUSH, DIA, RTC, TxA,
TxB, GPIINT, EXTINTACK, SYSCLK, RESET , TDO.
6/
Applies to RA[31:0], MEMWR , OE .
7/
Applies to PROM8 , ROMWRT , BUSRDY , BUSERR , DMAREQ , DMAAS, SYSHALT , NOPAR , RxA, RxB,
EXTINT[4:0], IWDE, EWDINT, WDCLK, CLK2, SYSRESET , TMODE[1:0], DEBUG, TCK, TRST , TMS, TDI.
8/
Applies to PROM8 , ROMWRT , BUSRDY , BUSERR , DMAREQ , DMAAS, SYSHALT , NOPAR , RxA, RxB,
EXTINT[4:0], IWDE, EWDINT, WDCLK, CLK2, SYSRESET , TMODE[1:0], DEBUG TCK, TRST .
9/
Applies to TMS, TDI.
10/ Applies to RA[31:0], RAPAR, RASI[3:0], RSIZE[1:0], RASPAR, CPAR, D[31:0], CB[6:0], DPAR, RLDSTO, DXFER, LOCK,
RD, WE , WRT, GPI[7:0].
11/ Tested during AC tests but not recorded.
12/ With reference edge of SYSCLK+.
13/ With reference edge of SYSCLK-.
14/ With reference edge of TCK+.
15/ With reference edge of TCK-.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
9
Case outline X
Millimeters
Symbol
Inches
Min
Max
Min
Max
A
2.41
3.18
.095
.125
A1
2.06
2.56
.081
.101
A2
0.05
0.36
.002
.014
b
0.15
0.25
.006
.010
c
0.10
0.20
.004
.008
D/E
53.23
55.74
2.095
2.195
D1/E1
36.83
37.34
1.450
1.470
e
L
0.508 BSC
8.20
N1/N2
.020 BSC
9.20
.323
64
.362
64
FIGURE 1. Case outline.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
10
Case X
Pin
number
Pin name
Pin
number
Pin name
Pin
number
Pin name
Pin
number
Pin name
1
GPIINT
33
D[20]
65
D[0]
97
RA[18]
2
GPI[7]
34
D[19]
66
RSIZE[1]
98
VCCO
3
VCCO
35
D[18]
67
RSIZE[0]
99
VSSO
4
VSSO
36
VCCO
68
RASI[3]
100
RA[17]
5
GPI[6]
37
VSSO
69
VCCO
101
RA[16]
6
GPI[5]
38
D[17]
70
VSSO
102
RA[15]
7
GPI[4]
39
D[16]
71
RASI[2]
103
VCCO
8
GPI[3]
40
VCCI
72
RASI[1]
104
VSSO
9
VCCO
41
VSSI
73
RASI[0]
105
RA[14]
10
VSSO
42
D[15]
74
RA[31]
106
VCCI
11
GPI[2]
43
D[14]
75
RA[30]
107
VSSI
12
GPI[1]
44
VCCO
76
VCCO
108
RA[13]
13
GPI[0]
45
VSSO
77
VSSO
109
RA[12]
14
D[31]
46
D[13]
78
RA[29]
110
VCCO
15
D[30]
47
D[12]
79
RA[28]
111
VSSO
16
VCCO
48
D[11]
80
RA[27]
112
RA[11]
17
VSSO
49
D[10]
81
VCCO
113
RA[10]
18
D[29]
50
VCCO
82
VSSO
114
RA[9]
19
D[28]
51
VSSO
83
RA[26]
115
VCCO
20
VCCI
52
D[9]
84
RA[25]
116
VSSO
21
VSSI
53
D[8]
85
RA[24]
117
RA[8]
22
D[27]
54
D[7]
86
VCCI
118
RA[7]
23
D[26]
55
D[6]
87
VSSI
119
RA[6]
24
VCCO
56
VCCO
88
VCCO
120
VCCO
25
VSSO
57
VSSO
89
VSSO
121
VSSO
26
D[25]
58
D[5]
90
RA[23]
122
RA[5]
27
D[24]
59
D[4]
91
RA[22]
123
RA[4]
28
D[23]
60
D[3]
92
RA[21]
124
RA[3]
29
D[22]
61
D[2]
93
VCCO
125
VCCO
30
VCCO
62
VCCO
94
VSSO
126
VSSO
31
VSSO
63
VSSO
95
RA[20]
127
RA[2]
32
D[21]
64
D[1]
96
RA[19]
128
RA[1]
FIGURE 2. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
11
Case X
Pin
number
Pin name
Pin
number
Pin name
Pin
number
Pin name
Pin
number
Pin name
129
RA[0]
161
SYSERR
193
DXFER
225
MEMCS[3]
130
VCCO
162
SYSAV
194
MEXC
226
VCCO
131
VSSO
163
EXTINT[4]
195
VCCO
227
VSSO
132
RAPAR
164
EXTINT[3]
196
VSSO
228
MEMCS[2]
133
RASPAR
165
EXTINT[2]
197
RESET
229
MEMCS[1]
134
DPAR
166
EXTINT[1]
198
SYSRESET
230
MEMCS[0]
135
VCCO
167
EXTINT[0]
199
BA[1]
231
VCCI
136
VSSO
168
VCCI
200
BA[0]
232
VSSI
137
SYSCLK
169
VSSI
201
CB[6]
233
OE
138
TDO
170
EXTINTACK
202
CB[5]
234
VCCO
139
TRST
171
IUERR
203
VCCO
235
VSSO
140
TMS
172
VCCO
204
VSSO
236
MEMWR
141
TDI
173
VSSO
205
CB[4]
237
BUFFEN
142
TCK
174
CPAR
206
CB[3]
238
DDIR
143
CLK2
175
TXA
207
CB[2]
239
VCCO
144
DRDY
176
RXA
208
CB[1]
240
VSSO
145
DMAAS
177
RXB
209
VCCO
241
DDIR
146
VCCO
178
TXB
210
VSSO
242
MHOLD
147
VSSO
179
IOWR
211
CB[0]
243
MDS
148
DMAGNT
180
IOSEL[3]
212
ALE
244
WDCLK
149
EXMCS
181
VCCO
213
VCCI
245
IWDE
150
VCCI
182
VSSO
214
VSSI
246
EWDINT
151
VSSI
183
IOSEL[2]
215
PROM8
247
TMODE[1]
152
DMAREQ
184
IOSEL[1]
216
ROMCS
248
TMODE[0]
153
BUSERR
185
IOSEL[0]
217
MEMCS[9]
249
DEBUG
154
BUSRDY
186
WRT
218
VCCO
250
INULL
155
ROMWRT
187
WE
219
VSSO
251
DIA
156
NOPAR
188
VCCO
220
MEMCS[8]
252
VCCO
157
SYSHALT
189
VSSO
221
MEMCS[7]
253
VSSO
158
CPUHALT
190
RD
222
MEMCS[6]
254
FLUSH
159
VCCO
191
RLDSTO
223
MEMCS[5]
255
INST
160
VSSO
192
LOCK
224
MEMCS[4]
256
RTC
FIGURE 2. Terminal connections – Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
12
FIGURE 3. Block diagram.
Device type 01
Instruction name
Instruction code
BYPASS
11.1111
EXTEST
00.0000
SAMPLE/PRELOAD
00.0001
INTEST
00.0011
ID code
10.0000
Reserved for emulation
01.1000
Reserved for emulation
01.1001
Reserved for emulation
01.1010
Reserved for emulation
01.1100
Reserved for emulation
01.1101
Reserved for emulation
01.1110
FIGURE 4. Boundary scan instruction codes.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
13
FIGURE 5. Timing waveforms.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
14
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
15
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
16
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
17
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
18
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
19
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
20
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
21
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
22
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
23
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
24
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
25
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
26
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
27
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
28
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
29
FIGURE 5. Timing waveforms - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
30
Case
outline
VDD = 5 V ±0.5 V
Ground
X
1 - 3, 5 - 9, 11 - 16, 20, 23, 24, 28, 30, 33,
34, 36, 40, 44, 50, 53, 56, 58, 62, 66 - 69,
71 - 76, 78 - 81, 83 - 86, 88, 90 - 93, 95 - 98,
100 - 103, 105, 106, 108 - 110, 112 - 115,
117 - 120, 122 - 125, 127 - 130, 132 - 135,
137, 138, 140 - 142, 144, 146, 148 - 150,
152 - 155, 157 - 159, 161 - 168, 170 - 172,
174 - 181, 183 - 188, 190 - 195, 197, 199,
200, 203, 206, 208, 209, 212, 213, 215 - 218,
220 - 226, 228 - 231, 233, 234, 236 - 239,
241 - 243, 250 - 252, 254 - 256
4, 10, 17 - 19, 21, 22, 25 - 27,
29, 31, 32, 35, 37 - 39, 41 - 43,
45 - 49, 51, 52, 54, 55, 57,
59 - 61, 63 - 65, 70, 77, 82, 87,
89, 94, 99, 104, 107, 111, 116,
121, 126, 131, 136, 139, 145,
147, 151, 156, 160, 169, 173,
182, 189, 196, 198, 201, 202,
204, 205, 207, 210, 211, 214,
219, 227, 232, 235, 240,
244 - 249, 253
Other
143
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
Pin 138 (TDO) is in the high-impedance (High Z) state.
Pin 143 (CLK2) is activated at low frequency (below 100 Hz).
The product is set in reset mode.
The following pins have serial resistors with the specified value attached:
1 kΩ: 2, 5 – 8, 11 – 15, 18, 19, 22, 23, 26 – 29, 32 – 35, 38, 39, 42, 43, 46 – 49, 52 – 55,
58 – 61, 64, 65, 134, 139 – 143, 145, 152 – 157, 163 – 167, 176, 177, 198, 201,
202, 205 – 208, 211, 215, and 244 – 249.
5.6 kΩ: 1, 66 – 68, 71 – 75, 78 – 80, 83 – 85, 90 – 92, 95 – 97, 100 – 102, 105, 108, 109,
112 – 114, 117 – 119, 122 – 124, 127 – 129, 132, 133, 137, 138, 144, 148, 149,
158, 161, 162, 170, 171, 174, 175, 178 – 180, 183 – 187, 190 – 194, 197, 199,
200, 212, 216, 217, 220 – 225, 228 – 230, 233, 236 – 238, 241 – 243, 250, 251,
and 254 – 256.
For all other pins, no serial resistor is attached.
The following output pins have output buffer capacitors with the specified value attached:
400 pF: 74, 75, 78 – 80, 83 – 85, 90 – 92, 95 – 97, 100 – 102, 105, 108, 109,
112 – 114, 117 – 119, 122 – 124, 127 – 129, 233, and 236.
For all other output pins, output buffers are 150 pF.
The following I/O pins are Input at reset: 2, 5 – 8, 11 – 13, 134, 201, 202, 205 – 208, and 211.
VCCO/VSSO = Output buffers.
VCCI/VSSI = Internal logic.
FIGURE 6. Radiation exposure connections.
TABLE IB. SEP test limits. 1/ 2/
Device
type
TA =
Temperature
±10°C 3/
All
+25°C
VDD = 4.5 V
Effective LET
no upsets
2
[MeV/(mg/cm )]
Maximum device
cross section
(LET = 80)
2
(cm )
15
2E-5
Bias for
latch-up test
VDD = 5.5 V
no latch-up
LET 3/
>80
1/ Devices that contain cross coupled resistance must be tested at the maximum
rated TA. For SEP test condition, see 4.4.4 herein.
2/ Technology characterization and model verification supplemented by in-line
data may be used in lieu of end-of-line. Test plan must be approved by TRB
and qualifying activity.
3/ Worst case temperature TA = +125°C.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
31
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
For device class M, subgroups 7 and 8 tests shall verify the instruction set. The instruction set forms a part of the
vendor’s test tape and shall be maintained and available for review from the approved sources of supply. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroup 4 (CIN measurement) shall be measured only for the initial test and after process or design changes which
may affect input capacitance. A minimum sample of 3 devices with zero rejects shall be required.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
32
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
---
---
1, 7, 9
Final electrical
parameters (see 4.2)
1, 2, 3, 7, 8, 9,
10, 11 1/
1, 2, 3, 7, 8, 9,
10, 11 1/
1, 2, 3, 7, 8, 9,
10, 11 2/ 3/
1, 2, 3, 4, 7, 8, 9,
10, 11
1, 2, 3, 4, 7, 8, 9,
10, 11
1, 2, 3, 4, 7, 8, 9,
10, 11
Group C end-point electrical
parameters (see 4.4)
2, 8A, 10
2, 8A, 10
2, 8A, 10
3/
Group D end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group E end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group A test
requirements (see 4.4)
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1 and 7.
3/ Delta limits are as specified in table IIB herein and shall be required where specified in table I.
TABLE IIB. Delta limits.
Parameter 1/
Limit
Unit
VOH
±0.1
V
VOL
±0.1
V
IIH
±0.1
µA
IIL
±0.1
µA
IOZH
±0.1
µA
IOZL
±0.1
µA
1/ The parameters shall be recorded before
and after the required burn-in and life test
to determine the delta limits.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
33
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at TA = +25°C
±5°C, after exposure, to the subgroups specified in table IIA herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, test
method 1019 (condition B) and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the
pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see paragraph 1.5). Tests shall be performed on devices, the Standard
Evaluation Circuit (SEC), or approved test structures at technology qualification and after any design or process changes which
may effect the RHA capability of the process.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with MIL-STD-883, test method
1021 and herein (see paragraph 1.5).
a.
Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535.
4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices (see paragraph 1.5). SEP testing
shall be performed on the SEC or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and
after any design or process changes which may effect the upset or latchup characteristics. The recommended test conditions
for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive (i.e. 0° ≤
angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.
The fluence shall be ≥ 100 errors or ≥ 10 ions/cm .
c.
The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be ≥ 20 microns in silicon.
e.
The upset test temperature shall be +25°C and the latchup test temperature is maximum rated operating temperature
±10°C.
f.
Bias conditions shall be defined by the manufacturer for latchup measurements.
g.
Test four devices with zero failures.
h.
For SEP test limits, see table IB herein.
6
2
5
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
2
2
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
34
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a
contractor-prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535, MIL-HDBK-1331, and table III herein.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
6.7 Additional information. A copy of the following additional data shall be maintained and available from the device
manufacturer:
a.
RHA upset levels.
b.
Test conditions (SEP).
c.
Number of upsets (SEP).
d.
Number of transients (SEP).
e.
Occurrence of latchup (SEP).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
35
TABLE III. Terminal descriptions.
Pin name
Type
1/
Description
IU and FPU Signals
RA[31:0]
I/O
Registered address bus. The address bus for the device is an output bus. Inside the
processor, the IU address bus is used to perform decoding, to generate select signals and to
check against the memory access protection scheme. It is also used to address the system
registers. To save board space, the address bus is sent out registered for external resources.
This means that internal D-type flip-flop's are implemented inside the device to memorize the
IU address bus at each rising edge of SYSCLK enabled by ALE signal. This registered
address bus is always driven by the device even during system registers accesses.
In case of DMA session, the address bus for the device is an input bus. The DMA unit must
drives itself the registered address bus for the available parts of the processor during a DMA
session and for the external resources (SRAM's, ROM's, I/O's ....).
Organization and addressing of data in memory follows the "Big-Endian" convention wherein
lower addresses contain the higher-order bytes. Attempting to access misaligned data will
generate a memory-address-not-aligned trap (tt = 7).
RAPAR
I/O
Registered address bus parity. This output is the odd parity over the 32-bit IU address bus. To
save board space, this signal is sent out registered and has the same timing as RA[31:0].
In case of DMA session, this signal must be driven by the DMA unit if DMA parity is enabled.
This input requires the same timing as RA[31:0].
RASI[3:0]
I/O
4-bit registered address space identifier. These four bits constitute the Address Space
Identifier (ASI), which identifies the memory address space to which the instruction or data
access is being directed. The ASI bits are provided to detect supervisor or user mode,
instruction or data access. Inside the processor, these identifiers are used to control accesses
to on-chip peripherals. To save board space, these outputs are sent out registered and has the
same timing as RA[31:0].
In case of DMA session, these signals must be driven by the DMA unit. These inputs require
the same timing as RA[31:0].
RSIZE[1:0]
I/O
2-bit registered bus transaction size. The coding on these pins specifies the size of the data
being transferred during an instruction or a data fetch. To save board space, these outputs are
sent out registered and has the same timing as RA[31:0].
RASPAR
I/O
Registered ASI and SIZE parity. This output is the odd parity over the RASI[3:0] and the
RSIZE[1:0] signals. To save board space, this output is sent out registered and has the same
timing as RA[31:0].
In case of DMA session, this signal must be driven by the DMA unit if DMA parity is enabled.
This input requires the same timing as RA[31:0].
CPAR
I/O
Control bus parity. This output is the odd parity over the RLDSTO, DXFER, LOCK, WRT, RD
and WE signals. This signal is sent out unregistered and must be latched externally before it
is used.
In case of DMA session, this signal must be driven by the DMA unit if DMA parity is enabled.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
36
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
IU and FPU Signals – Continued
D[31:0]
I/O
32-bit data bus. These signals form a 32-bit bidirectional data bus that serves as the interface
between the device and external memory. The data bus is not driven by the device during
system registers accesses, it is only driven during the execution of integer and floating-point
store instructions and the store cycle of atomic-load-store instructions on external memory.
Store data is valid during the second data cycle of a store single access, the second and third
data cycle of a store double access, and the third data cycle of an atomic-load-store access.
Alignment for load and store instructions is performed by the processor. Doublewords are
aligned on 8-byte boundaries, words on 4-byte boundaries, and halfwords on 2-byte
boundaries. If a doubleword, word, or halfword load or store instruction generates an
improperly aligned address, a memory address not aligned trap will occur. Instructions and
operands are always expected to reside in a 32-bit wide memory. D[31] corresponds to the
most significant bit of the most significant byte of a 32-bit word going to or from memory.
CB[6:0]
I/O
7-bit check-bit bus. CB[6:0] is the EDAC checkword over the 33-bit data bus consisting of
D[31:0] and the parity bit (DPAR). When the device performs a write operation to the main
memory, it will assert the EDAC checkword on the CB[6:0]. During read access from the main
memory, CB[6:0] are input signals and will be used for checking and correction of the data
word and the parity bit. During read access to areas which do not generate a parity bit, the
device will latch the data from the accessed address and drive the correct parity bit on the
DPAR pin.
DPAR
I/O
Data bus parity. This pin is used by the device to check and generate the odd parity over the
32-bit data bus during write cycles. DPAR = not (D[31] xor D[30] xor .... xor D[1] xor D[0])
In case of DMA session, this signal must be driven by the DMA unit if DMA parity is enabled.
RLDSTO
I/O
Registered atomic load-store. This signal is used to identify an atomic load-store to the system
and is asserted by the IU during all the data cycles (the load cycle and both store cycles) of
atomic load-store instructions. To save board space, LDSTO is sent out registered.
In case of DMA session, this signal must be driven unlatched by the DMA unit.
O
ALE
Address latch enable. This output is asserted when the internal address bus from the IU is to
be latched. This latch operation is assumed by the internal latch.
In case of DMA session, this signal is intended to be used to enable the clock input (SYSCLK)
of an external flip-flop used to latch the generated address from DMA unit.
DXFER
I/O
Data transfer. DXFER is used to differentiate between the addresses being sent out for
instruction fetches and the addresses of data fetches. DXFER is asserted by the processor
during the address cycles of all bus data transfer cycles, including both cycles of store single
and all three cycles of store double and atomic load-store. DXFER is sent out unregistered and
must be latched externally before it is used.
A DMA unit must supply this signal during a DMA session.
LOCK
I/O
Bus lock. LOCK is asserted by the processor when it needs to retain control of the bus
(address and data) for multiple cycle transactions (Load Double, Store Single and Double,
Atomic Load-Store). The bus will not be granted to another bus master as long as LOCK is
asserted. Note that MHOLD , when it reflects the internal signal "Bus Hold", should not be
asserted in the processor clock cycle which follows a cycle in which LOCK is asserted. LOCK
is sent out unregistered and must be latched externally before it is used.
A DMA unit must supply this signal during a DMA session.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
37
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
IU and FPU Signals – Continued
RD
I/O
Read access. RD is sent out during the address portion of an access to specify whether the
current memory access is a read (RD = "1") or a write (RD = "0") operation. RD is set low only
during the address cycles of store instructions. For atomic load-store instructions, RD is set
high during the load address cycle and set low during the two store address cycles. RD may
be used, in conjunction with SIZE[1:0], ASI[7:0], and LDSTO, to determine the type and to
check the read/write access rights of bus transactions in the Extended General area. It is sent
out unregistered and must be latched externally before it is used.
A DMA unit must supply this signal during a DMA session.
O
MHOLD
Memory bus hold. The signal is asserted when a “Memory Hold” (MHOLD), or a “Floating Point
Hold” (FHOLD) or a “Floating Point Condition Codes Valid” (FCCV) or a Bus Hold (BHOLD) is
internally generated.
Note that MHOLD must be driven HIGH while RESET is LOW.
• "Memory Hold"
"Memory Hold" is used to freeze the pipeline to both the IU and FPU accessing a slow memory
or during memory exception. The IU and FPU internal outputs return to and stay at the value
they had on the rising edge of SYSCLK in the cycle in which "Memory Hold" was asserted.
"Memory Hold" is tested on the falling edge (midpoint of cycle) of SYSCLK. The memory wait
state controller of the device inserts, in this way, wait states during external accesses.
• "Floating-Point Hold"
"Floating-Point Hold" is asserted by the FPU if a situation arises in which the FPU cannot
continue execution. The FPU checks all dependencies in the decode stage of the instruction
and asserts a "Floating-Point Hold" (if necessary) in the next cycle. If the IU receives a
"Floating-Point Hold", it freezes the instruction pipeline in the same cycle. Once the conditions
causing the "Floating-Point Hold" are resolved, the FPU deasserts its command, releasing the
instruction pipeline. A "Floating-Point Hold" is asserted if:
- the FPU encounters an STFSR instruction with one or more FPops pending in the queue,
- either a resource or operand dependency exists between the FPop being decoded and any
FPops already being executed,
- the floating-point queue is full.
• "Floating-Point Condition Codes Valid"
"Floating-Point Condition Codes Valid" is a specialized hold used to synchronize FPU compare
instructions with floating-point branch instructions. It is asserted (the normal condition)
whenever the "Floating-Point Condition Codes" bits (FCC[1:0]) are valid. The FPU deasserts
these bits (= "0") as soon as a floating-point compare instruction enters the floating-point
queue, unless an exception is detected. Deasserting the "Floating-Point Condition Codes" bits
freezes the IU pipeline, preventing any further compares from entering the pipeline. The
"Floating-Point Condition Codes" bits are reasserted when the compare is completed and the
condition codes are valid, thus ensuring that the condition codes match the proper compare
instruction.
• "Bus Hold"
"Bus Hold" is asserted during DMA accesses. Assertion of this hold signal will freeze the
processor pipeline, so after deassertion of "Bus Hold", external logic must guarantee that the
data at all inputs to the device is the same as it was before "Bus Hold" was asserted. This hold
signal is tested on the falling edge (midpoint of cycle) of SYSCLK.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
38
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
IU and FPU Signals – Continued
I/O
WE
Write enable. WE is asserted by the IU during the cycle in which the store data is on the data
bus. For a store single instruction, this is during the second store address cycle, the second
and third store address cycles of store double instructions and the third load-store address
cycle of atomic load-store instructions. To avoid writing to memory during memory exceptions,
WE must be externally qualified by the MHOLD , when this holding reflects the internal signal
"Memory Hold". It is sent out unregistered and must be latched externally before it is used.
A DMA unit must supply this signal during a DMA session, asserted low for write and
deasserted high for read accesses.
WRT
I/O
Advanced write. WRT is an early write signal, asserted by the processor during the first store
address cycle of integer single or double store instructions, the first store address cycle of
floating-point single or double store instructions, and the second load-store address cycle of
atomic load-store instructions. WRT is sent out unregistered and must be latched externally
before it is used.
A DMA unit must supply this signal during a DMA session, deasserted low for read and
asserted high for write accesses.
O
MDS
Memory data strobe. MDS is asserted by the memory access controller of the device to
enable the clock to the IU's instruction register (during an instruction fetch) or to the load result
register (during a data fetch) while the pipeline is frozen with an MHOLD . In a system with
slow memories, MDS tells the processor when the read data is available on the bus. MDS is
also used to strobe in the MEXC memory exception signal. MDS is only asserted when the
pipeline is frozen with MHOLD .
O
MEXC
Memory exception. Assertion of this signal by the memory access controller of the device
initiates a memory exception and indicates to the IU that the memory system was unable to
supply a valid instruction or data. If MEXC is asserted during an instruction fetch cycle, it
generates an instruction access exception trap (tt=1). If asserted during a data cycle, it
generates a data access exception trap (tt=9). It denotes a parity error, uncorrectable EDAC
error, access violation, bus time-out or system bus error is detected.
MEXC is used as a qualifier for the MDS signal, and is asserted when both MHOLD and
MDS are already asserted. If MDS is applied without MEXC , the device accepts the contents
of the data bus as valid. If MEXC accompanies MDS , an exception is generated and the data
bus content is ignored.
MEXC is latched in the IU on the rising edge of SYSCLK and is used in the following cycle.
MEXC is deasserted in the same clock cycle in which MHOLD is deasserted.
If this signal is asserted during a DMA transfer, the DMA must withdraw its DMA request and
end the DMA cycle.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
39
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
Memory and System Interface Signals
I
PROM8
Select 8-bit wide PROM. This input indicates that only 8-bit wide PROM is connected to the
device. The eight data lines from the PROM is to be connected to the D[7:0] signals. The
processor will perform an 8-bit to 32-bit conversion when the IU reads from the PROM (the
conversion is not visible on data bus). There is no EDAC or parity checking on accesses to the
PROM when PROM8 is asserted, and EDAC and parity bits must be supplied by the PROM
when PROM8 is deasserted.
BA[1:0]
O
Latched address used for 8-bit wide boot PROM. These outputs are used when 8-bit wide
PROM is connected to the device.
During a fetch or 32-bit load access to the PROM, the BA[1:0] will be asserted four times in
order to get the four bytes needed to generate a 32-bit word.
ROMCS
O
PROM chip select. This output is asserted whenever there is an access to the boot ROM and
extended PROM areas. It can be connected directly to the PROM chip select pins.
ROMWRT
I
ROM write enable. Assertion of this signal will enable the pwr bit of the Memory Configuration
Register (MCNFR). This logic allows the on-board programming (write operations) of the boot
PROM when EEPROM or FLASH devices are used.
MEMCS[9 : 0]
O
Memory chip select. MEMCS[9 : 0] is asserted during an access to the main memory.
MEMCS[9 : 8] are redundant signals, used to substitute any of the nominal memory banks
when memory connected to any of MEMCS[7 : 0] malfunctions.
MEMWR
O
Memory write. MEMWR is asserted during write access (store) to boot PROM area, extended
PROM area, RAM area and extended RAM area. It is intended to be used as write strobe to the
memory devices.
OE
O
Memory output enable. OE is asserted during fetch or load accesses to the main memory. It
is intended to be used to control memory devices with output enable features.
BUFFEN
O
Data buffer enable. BUFFEN is asserted during memory accesses excepted in RAM area
(RAM area does not needs data buffers). It is intended to be used as buffer enable for data,
check and parity bit buffers in the boot PROM area, extended PROM area, exchange memory
area, extended RAM area, I/O area, extended I/O area and extended general area if these
areas share the same buffers.
DDIR
O
Data buffer direction. DDIR is used for determining the direction of the data buffers enabled by
BUFFEN . It is valid during all memory accesses. The DDIR is asserted high during store
operations.
O
DDIR
Data buffer direction. DDIR is used for determining the direction of the data buffers enabled by
BUFFEN . It is valid during all memory accesses. The DDIR is asserted high during fetch or
load operations.
IOSEL[3 : 0]
O
I/O chip select. These four select signals are used to enable one of four possible I/O address
areas.
IOWR
O
I/O and exchange memory write strobe. IOWR is asserted during write operations to the I/O
area, extended I/O area and the exchange memory area.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
40
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
Memory and System Interface Signals - Continued
EXMCS
O
Exchange memory chip select. EXMCS is asserted when the exchange memory is accessed.
BUSRDY
I
Bus ready. BUSRDY is to be generated by a unit in the I/O area, exchange memory area or in
the extended areas, which requires extended time when accessed in addition to the
preprogrammed number of wait states. (Note however that wait states can not be
preprogrammed for units in the extended general area, only for extended I/O, boot PROM and
RAM).
Error, DMA, Halt, and Check Signals
BUSERR
I
Bus error. BUSERR is to be generated together with BUSRDY by a unit in the I/O area,
exchange memory area or in the extended areas if an error is detected by the accessed unit
during an access.
DMAREQ
I
DMA request. DMAREQ is to be issued by a unit requesting the access to the processor bus
as a master. The device can include a DMA session timeout function preventing the DMA unit
to lockout the IU/FPU by asserting DMA request for a long time.
DMAGNT
O
DMA grant. DMAGNT is generated by the device as a response to a DMAREQ . DMAGNT is
sent after that the device has asserted a "Bus Hold". A memory cycle started by the processor
is not interrupted by a DMA access before it is finished.
The DMA unit has access to all system registers and all integrated peripherals of the device. It
has also access to the memory controlled by the memory access controller of the device.
DMAAS
I
DMA address strobe. During DMA transfers (when the external DMA is bus master) this input is
used to inform the device that the address from the DMA is valid and that the access cycle shall
start. DMAAS can be asserted multiple times during DMA grant.
DRDY
O
Data ready during DMA access. During DMA read transfers (when the external DMA is bus
master) this output is used to inform the DMA unit that the data are valid. During DMA write
transfers this signal indicates that data have been written into memory.
IUERR
O
IU error. This signal is asserted when the (master) IU enters the "error mode" state. This
happens if a synchronous trap occurs while traps are disabled (the %PSR's et bit = 0). Before it
enters the error mode state, the device saves the %PC and %nPC and sets the trap type (tt) for
the trap causing the error mode into the %TBR. It then asserts the error signal and halts. The
only way to restart a processor which is in the error mode state is to trigger a reset by asserting
the RESET signal.
O
CPUHALT
Processor (IU & FPU) halt and freeze. This output informs that the IU and the FPU are in "halt"
mode. It can be used to halt other units in the system. CPUHALT signal is also used to advise
the "freeze" mode generated by the OCD.
O
SYSERR
System error. This signal is asserted whenever an unmasked error is set in the Error and Reset
Status Register (ERRRSR). It stays asserted until the ERRRSR is cleared. The error can
originate from either the IU (IU error ar IU hardware error) or the system registers (system
hardware error). SYSERR and IUERR are used to signal to the application system.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
41
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
Error, DMA, Halt, and Check Signals - Continued
I
SYSHALT
System halt. Assertion of this pin will halt the device, freezing IU/FPU execution. SYSCLK and
internal CLK2 are running but all the timers and watchdog are halted and the UART operation is
stopped.
DMA accesses are allowed during halt mode.
When SYSHALT is deasserted, the previous mode is entered.
SYSAV
O
System availability. This signal is asserted whenever the system is available, i.e. when the
sysav bit in the ERRRSR is set and the CPUHALT and SYSERR signals are deasserted. The
sysav bit is cleared by reset and is programmable by software.
I
NOPAR
No parity. Assertion of this signal will disable the parity checking of all signals related to the
device internal buses. The parity generation on the data bus (towards and IO units) is not
affected by this signal, but note that parity checking is disabled if NOPAR is asserted. This is a
static signal and shall not change when running.
When this signal is asserted (no parity), it disables the epa and rpa bits of the Memory
Configuration Register (MCNFR) and the pa3, pa2, pa1, and pa0 bits of the I/O Configuration
Register.
INULL
O
Integer unit nullify cycle. The processor asserts INULL to indicate that the current memory
access is being nullified. It is asserted at the beginning of the cycle in which the address being
nullified is active. INULL is used to disable memory exception generation for the current
memory access. This means that MDS and MEXC is not be asserted for a memory access in
which INULL = 1.
INULL is asserted under the following conditions:
- during the second data cycle of any store instruction (including Atomic Load-Store) to nullify
the
second occurrence of the store address,
- on all traps, to nullify the third instruction fetch after the trapped instruction. For reset, it
nullifies
the error-producing address,
-
on a load in which the hardware interlock is activated,
-
on JMPL and RETT instructions.
INST
O
Instruction fetch. The INST signal is asserted by the IU whenever a new instruction is being
fetched. It is used by the FPU to latch the instruction currently on the internal data bus into an
FPU instruction buffer. The FPU have two instruction buffers (D1 and D2) to save the last two
fetched instructions. When INST is asserted, a new instruction enters buffer D1 and the
instruction that was in D1 moves to buffer D2.
FLUSH
O
FPU instruction flush. This signal is asserted by the IU whenever it takes a trap. FLUSH is
used by the FPU to flush the instructions in its instruction buffers. These instructions, as well as
the instructions annulled in the IU pipeline, are restarted after the trap handler is finished. If the
trap was not caused by a floating-point exception, instructions already in the floating-point
queue may continue their execution. If the trap was caused by a floating-point exception, the
Fpqueue must be emptied before the FPU can resume execution.
DIA
O
Delay instruction annulled. This signal is asserted when the delay instruction is annulled (c.f.
delayed control transfer). This signal is used to trace the IU execution pipe.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
42
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
Interrupt, Clock, UART, GPI, Timer, TAP, and Test Signals
RTC
O
Real time clock counter output. This signal is generated when the delay time has elapsed in the
"Real Time Clock Timer". This output is asserted high for one SYSCLK period.
RxA/RxB
I
Receive data UART "A" and "B". RxA is the serial data input for channel A of the UART. RxB is
the serial data input for channel B of the UART.
TxA/TxB
O
Transmit data UART "A" and "B". TxA is the serial data output for channel A of the UART. TxB
is the serial data output for channel B of the UART.
GPI[7:0]
I/O
General purpose interface. Each pin of the GPI is programmable as input or output
GPIINT
O
General purpose interface interrupt. An edge detection (rising or falling) is made on each GPI
input pin configured as input. GPIINT is the result of a logical OR of these detections. This
output is asserted high for two SYSCLK periods.
EXTINT[4:0]
I
External interrupt. The five external interrupt inputs are programmable to be level or edge
sensitive, and active high (rising) or active low (falling).
EXTINTACK
O
External interrupt acknowledge. EXTINTACK is used for giving acknowledge to an interrupting
unit which requires such a signal. It is programmable to which of the five external interrupt
inputs it is associated. It is issued as soon as the IU has recognized the interrupt.
IWDE
I
Internal watch dog enable. This static signal commands the multiplexer placed in front of the
watch dog timeout interrupt of the "Interrupt Pending Register". To use the internal watch dog,
IWDE must set to high. This input set to low enables the input EWDINT for an external watch
dog and disables entirely the internal watch dog (not running). The value of IWDE is copied into
the "System Control Register" bit 15.
EWDINT
I
External watch dog input interrupt. This input enabled by IWDE receives an external watch dog
timeout. Another usage of this input can be an NMI. This input must asserted high for a
minimum of two SYSCLK periods.
WDCLK
I
Watch dog clock. WDCLK is the WD clock input but this clock can also be used as a clock
input for the UART interface. The clock frequency of WDCLK must be less than the clock
frequency of SYSCLK, i.e. fWDCLK < fSYSCLK.
CLK2
I
Double frequency clock. CLK2 is the input clock to the device. The frequency of this clock
must be twice the clock frequency fSYSCLK used to drive the IU and the FPU. Note that some
external timings of the device can be affected by the duty cycle of CLK2.
SYSCLK
O
System clock. SYSCLK is a nominally 50% duty-cycle clock generated by the device from
CLK2 and is used for clocking the IU and the FPU as well as other system logic. Note that the
timing of the device is referenced by SYSCLK.
RESET
O
Output reset. RESET will be asserted when the device is to be synchronously reset. This
occurs when either SYSRESET is asserted or the device initiates a reset due to an error or a
programming command. The minimum pulse width of RESET is 1024 SYSCLK periods to
authorize the implementation of FLASH memories in the application.
SYSRESET
I
System input reset. Assertion of this pin will reset the device. Following this assertion, RESET
is generated for a minimum of 1024 SYSCLK periods. SYSRESET must be asserted for a
minimum of 4 SYSCLK periods.
See footnote at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
43
TABLE III. Terminal descriptions - Continued.
Pin name
Type
1/
Description
Interrupt, Clock, UART, GPI, Timer, TAP, and Test Signals – Continued
TMODE[1:0]
I
Factory test mode. This test mode is only dedicated for factory test mode. The user functional
mode is: TMODE[1:0] = "00".
DEBUG
I
Software debug mode. DEBUG directly enables the setting of halt bits of the "Timer Control
Register" to freeze integrated peripherals.
-
DEBUG + phlt freeze the internal watch dog and the 2 internal timers,
-
DEBUG + phlt + ahlt freeze the channel A of the internal UART,
-
DEBUG + phlt + bhlt freeze the channel B of the internal UART.
For final application, this pin must be grounded. This allows to keep software included debug
facilities.
TCK
I
Test (JTAG) clock. Test clock for scan registers.
TRST
I
Test (JTAG) reset. Asynchronous reset for the TAP controller. For final application, this pin
must be grounded.
TMS
I
Test (JTAG) mode select. Selects test mode of the TAP controller.
TDI
I
Test (JTAG) data input. Test scan register data input.
TDO
O
Test (JTAG) data output. Test scan register data output.
Power Signals
VCCO/VCCI
Power. VCCO pins supply the output and bidirectional pins of the device.
VCCI pins supply the input and the main internal circuitry of the device.
VSSO/VSSI
Ground. VSSO pins provide ground return for the output and bidirectional pins of the device.
VSSI pins provide ground return for the input and the main internal circuitry of the
device.
1/
I = Input; O = Ouput.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
44
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number
(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
-
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
00540
01
V
9
X
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels.
A dash (-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
Circuit function
01
TSC695F
32-bit SPARC processor
Frequency
25 MHz
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
45
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
A.1.2.4 Die Details. The die details designation shall be a unique letter which designates the die's physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
46
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification,
standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards
specified in the solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
- Test Method Standard Microcircuits.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
(Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting activity).
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as
specified in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be
as specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and figure A-1.
A.3.2.5 Radiation exposure connections. The radiation exposure connections shall be as defined in paragraph 3.2.6 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
47
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN
listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 QUALITY ASSURANCE PROVISIONS
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in
accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The
modifications in the QM plan shall not effect the form, fit or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum it shall consist of:
a)
Wafer lot acceptance for Class V product using the criteria defined in MIL-STD-883 test method 5007.
b)
100% wafer probe (see paragraph A.3.4 herein).
c)
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883 test method 2010 or
the alternate procedures allowed in MIL-STD-883 test method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0536.
A.6.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DSCC-VA and have
agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
48
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions - Mask number 5186
Die physical dimensions.
Die size:
Die thickness:
11,010 x 11,170 microns (with scribe line)
475 microns
Interface materials.
Top metallization:
Backside metallization:
Al Cu
Si (bare)
Glassivation.
Type:
Thickness:
Oxinitride
21 kÅ
Substrate:
Single crystal silicon
Assembly related information.
Substrate potential:
Special assembly instructions:
Not connected
None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
49
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
Die bonding pad locations.
Pad
X Center
Y Center
Pad
X Center
Y Center
Pad
X Center
Y Center
Pad
X Center
Y Center
1
4807.1
5101.8
33
-75.8
5101.8
65
-5101.8
4807.1
97
-5101.8
-75.8
2
4655.1
5101.8
34
-227.8
5101.8
66
-5101.8
4655.1
98
-5101.8
-227.8
3
4503.1
5101.8
35
-379.8
5101.8
67
-5101.8
4503.1
99
-5101.8
-379.8
4
4351.1
5101.8
36
-531.8
5101.8
68
-5101.8
4351.1
100
-5101.8
-531.8
5
4199.1
5101.8
37
-683.8
5101.8
69
-5101.8
4199.1
101
-5101.8
-683.8
6
4047.1
5101.8
38
-835.8
5101.8
70
-5101.8
4047.1
102
-5101.8
-835.8
7
3895.1
5101.8
39
-987.8
5101.8
71
-5101.8
3895.1
103
-5101.8
-987.8
8
3743.1
5101.8
40
-1139.8
5101.8
72
-5101.8
3743.1
104
-5101.8
-1139.8
9
3591.1
5101.8
41
-1291.8
5101.8
73
-5101.8
3591.1
105
-5101.8
-1291.8
10
3439.1
5101.8
42
-1443.8
5101.8
74
-5101.8
3439.1
106
-5101.8
-1443.8
11
3287.1
5101.8
43
-1595.8
5101.8
75
-5101.8
3287.1
107
-5101.8
-1595.8
12
3135.1
5101.8
44
-1747.8
5101.8
76
-5101.8
3135.1
108
-5101.8
-1747.8
13
2983.1
5101.8
45
-1899.8
5101.8
77
-5101.8
2983.1
109
-5101.8
-1899.8
14
2831.1
5101.8
46
-2051.8
5101.8
78
-5101.8
2831.1
110
-5101.8
-2051.8
15
2679.1
5101.8
47
-2203.8
5101.8
79
-5101.8
2679.1
111
-5101.8
-2203.8
16
2527.1
5101.8
48
-2355.8
5101.8
80
-5101.8
2527.1
112
-5101.8
-2355.8
17
2375.1
5101.8
49
-2507.8
5101.8
81
-5101.8
2375.1
113
-5101.8
-2507.8
18
2223.1
5101.8
50
-2659.8
5101.8
82
-5101.8
2223.1
114
-5101.8
-2659.8
19
2071.1
5101.8
51
-2811.8
5101.8
83
-5101.8
2071.1
115
-5101.8
-2811.8
20
1919.1
5101.8
52
-2963.8
5101.8
84
-5101.8
1919.1
116
-5101.8
-2963.8
21
1767.1
5101.8
53
-3115.8
5101.8
85
-5101.8
1767.1
117
-5101.8
-3115.8
22
1615.1
5101.8
54
-3267.8
5101.8
96
-5101.8
1615.1
118
-5101.8
-3267.8
23
1463.1
5101.8
55
-3419.8
5101.8
87
-5101.8
1463.1
119
-5101.8
-3419.8
24
1311.1
5101.8
56
-3571.8
5101.8
88
-5101.8
1311.1
120
-5101.8
-3571.8
25
1159.1
5101.8
57
-3723.8
5101.8
89
-5101.8
1159.1
121
-5101.8
-3723.8
26
1007.1
5101.8
58
-3875.8
5101.8
90
-5101.8
1007.1
122
-5101.8
-3875.8
27
855.1
5101.8
59
-4027.8
5101.8
91
-5101.8
855.1
123
-5101.8
-4027.8
28
703.1
5101.8
60
-4179.8
5101.8
92
-5101.8
703.1
124
-5101.8
-4179.8
29
551.1
5101.8
61
-4331.8
5101.8
93
-5101.8
551.1
125
-5101.8
-4331.8
30
399.1
5101.8
62
-4483.8
5101.8
94
-5101.8
399.1
126
-5101.8
-4483.8
31
247.1
5101.8
63
-4635.8
5101.8
95
-5101.8
247.1
127
-5101.8
-4635.8
32
95.1
5101.8
64
-4787.8
5101.8
96
-5101.8
95.1
128
-5101.8
-4787.8
See notes at end of figure.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
50
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
Die bonding pad locations - Continued.
Pad
X Center
Y Center
Pad
X Center
Y Center
Pad
X Center
Y Center
Pad
X Center
Y Center
129
-4807.1
-5101.8
161
75.8
-5101.8
193
5101.8
-4807.1
225
5101.8
75.8
130
-4655.1
-5101.8
162
227.8
-5101.8
194
5101.8
-4655.1
226
5101.8
227.8
131
-4503.1
-5101.8
163
379.8
-5101.8
195
5101.8
-4503.1
227
5101.8
379.8
132
-4351.1
-5101.8
164
531.8
-5101.8
196
5101.8
-4351.1
228
5101.8
531.8
133
-4199.1
-5101.8
165
683.8
-5101.8
197
5101.8
-4199.1
229
5101.8
683.8
134
-4047.1
-5101.8
166
835.8
-5101.8
198
5101.8
-4047.1
230
5101.8
835.8
135
-3895.1
-5101.8
167
987.8
-5101.8
199
5101.8
-3895.1
231
5101.8
987.8
136
-3743.1
-5101.8
168
1139.8
-5101.8
200
5101.8
-3743.1
232
5101.8
1139.8
137
-3591.1
-5101.8
169
1291.8
-5101.8
201
5101.8
-3591.1
233
5101.8
1291.8
138
-3439.1
-5101.8
170
1443.8
-5101.8
202
5101.8
-3439.1
234
5101.8
1443.8
139
-3287.1
-5101.8
171
1595.8
-5101.8
203
5101.8
-3287.1
235
5101.8
1595.8
140
-3135.1
-5101.8
172
1747.8
-5101.8
204
5101.8
-3135.1
236
5101.8
1747.8
141
-2983.1
-5101.8
173
1899.8
-5101.8
205
5101.8
-2983.1
237
5101.8
1899.8
142
-2831.1
-5101.8
174
2051.8
-5101.8
206
5101.8
-2831.1
238
5101.8
2051.8
143
-2679.1
-5101.8
175
2203.8
-5101.8
207
5101.8
-2679.1
239
5101.8
2203.8
144
-2527.1
-5101.8
176
2355.8
-5101.8
208
5101.8
-2527.1
240
5101.8
2355.8
145
-2375.1
-5101.8
177
2507.8
-5101.8
209
5101.8
-2375.1
241
5101.8
2507.8
146
-2223.1
-5101.8
178
2659.8
-5101.8
210
5101.8
-2223.1
242
5101.8
2659.8
147
-2071.1
-5101.8
179
2811.8
-5101.8
211
5101.8
-2071.1
243
5101.8
2811.8
148
-1919.1
-5101.8
180
2963.8
-5101.8
212
5101.8
-1919.1
244
5101.8
2963.8
149
-1767.1
-5101.8
181
3115.8
-5101.8
213
5101.8
-1767.1
245
5101.8
3115.8
150
-1615.1
-5101.8
182
3267.8
-5101.8
214
5101.8
-1615.1
246
5101.8
3267.8
151
-1463.1
-5101.8
183
3419.8
-5101.8
215
5101.8
-1463.1
247
5101.8
3419.8
152
-1311.1
-5101.8
184
3571.8
-5101.8
216
5101.8
-1311.1
248
5101.8
3571.8
153
-1159.1
-5101.8
185
3723.8
-5101.8
217
5101.8
-1159.1
249
5101.8
3723.8
154
-1007.1
-5101.8
186
3875.8
-5101.8
218
5101.8
-1007.1
250
5101.8
3875.8
155
-855.1
-5101.8
187
4027.8
-5101.8
219
5101.8
-855.1
251
5101.8
4027.8
156
-703.1
-5101.8
188
4179.8
-5101.8
220
5101.8
-703.1
252
5101.8
4179.8
157
-551.1
-5101.8
189
4331.8
-5101.8
221
5101.8
-551.1
253
5101.8
4331.8
158
-399.1
-5101.8
190
4483.8
-5101.8
222
5101.8
-399.1
254
5101.8
4483.8
159
-247.1
-5101.8
191
4635.8
-5101.8
223
5101.8
-247.1
255
5101.8
4635.8
160
-95.1
-5101.8
192
4787.8
-5101.8
224
5101.8
-95.1
256
5101.8
4787.8
See notes at end of figure.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
51
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00540
Die bonding pad locations - Continued.
Notes:
1.
2.
3.
The die center is the coordinate origin (0,0).
Coordinates are in microns.
Numbering of pad is not the numbering of the package pin.
It differs as follows:
Package pin 1 = Die pad 256
Package pin 2 = Die pad 255
Package pin 3 = Die pad 254
•
•
•
Package pin 256 = Die pad 1
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00540
A
REVISION LEVEL
A
SHEET
52
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 03-04-23
Approved sources of supply for SMD 5962-00540 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-0054001QXC
F7400
TSC695F-25MAMQ
5962-0054001VXC
F7400
TSC695F-25SASV
5962R0054001VXC
F7400
TSC695F-25SASR
5962-0054001Q9A
F7400
TSC695F-25MBMQ
5962-0054001V9A
F7400
TCS695F-25SBSV
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
F7400
Vendor name
and address
Atmel Nantes SA
BP70602
44306 NANTES CEDEX 3, France
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.