AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.7 dBm P1dB • +40.5 dBm Output IP3 • 20.4 dB Gain @ 900 MHz • 16.5 dB Gain @ 1900 MHz • +5V Single Positive Supply • Lead-free/Green/RoHScompliant SOT-89 Package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • DBS / WLL / W-LAN • Defense / Homeland Security Product Description Functional Diagram The AH118 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB power. The AH118 is available in a lead-free/green/RoHScompliant SOT-89 package. All devices are 100% RF and DC tested. GND 4 The AH118 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. Internal biasing allows the AH118 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications (1) Parameter Product Information 1 2 3 RF IN GND RF OUT Function Input / Base Output / Collector Ground Pin No. 1 3 2, 4 Typical Performance (3) Units Min MHz MHz dB dB dB dBm dBm 60 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range Device Voltage 13.5 +23 +39.5 Typ Max Parameter 3500 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power 1900 16.5 12 20 +24.7 +40.5 Units @ -45 dBc ACPR, dBm +18 dBm +16.7 dB mA V 4.3 160 +5 wCDMA Channel Power @ -45 dBc ACLR 140 Noise Figure Supply Bias 175 Typical MHz dB dB dB dBm dBm 900 20.4 -15 -12 +24.2 +40 1900 16.5 -12 -20 +24.7 +40.5 dBm +18.2 +18 dBm dB 2140 16.3 -15 -16 +24.7 +40.5 +16.7 4.0 4.3 4.8 +5 V @ 160 mA 3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, 160 mA, +25 °C 1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Junction Temperature Rating -40 to +85 °C -65 to +150 °C +15 dBm +6 V 220 mA +250 °C Ordering Information Part No. Description AH118-89G High Linearity InGaP HBT Amplifier AH118-89PCB900 AH118-89PCB1900 AH118-89PCB2140 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board (lead-free/green/RoHS-compliant SOT-89 package) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system) S11 0. 4 30 0.8 0 3. 2. 0 0 3. 0 4. 25 0 4. 5.0 0. 2 20 5.0 0. 2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0.2 15 0.4 10.0 10 5 -10.0 2 -0 . -5. 0 2 -0 . -5. 0 0 -10.0 -4 .0 -3 .0 .0 -2 .4 -0 -0.8 Swp Min 0.01GHz Swp Min 0.01GHz -1.0 2.5 -0 .6 2 -0.8 1 1.5 Frequency (GHz) -1.0 0.5 -0 .6 0 .0 -2 .4 -0 -10 -3 .0 -5 -4 .0 Gain (dB) Swp Max 6GHz 6 0. 2. 0 DB(GMax) 1.0 1.0 0.8 6 0. DB(|S[2,1]|) 35 S22 Swp Max 6GHz 0. 4 Gain / Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments. S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.69 -2.16 -1.91 -1.77 -1.60 -1.45 -1.40 -1.25 -1.20 -1.17 -1.13 -1.11 -1.05 -0.99 -0.93 -0.95 -0.92 -173.38 -177.19 178.30 172.47 166.83 161.09 155.39 149.59 143.79 137.57 132.05 126.72 121.50 115.58 110.41 105.30 100.11 21.74 19.63 18.22 17.13 15.99 14.97 13.84 12.76 11.71 10.63 9.75 8.88 8.00 7.31 6.52 5.73 5.05 153.70 150.82 148.19 135.41 121.91 109.02 97.28 86.83 76.95 68.15 59.55 52.22 45.09 37.40 30.66 23.51 17.07 -31.02 -30.31 -29.87 -29.83 -29.49 -29.18 -28.70 -28.63 -28.30 -27.94 -27.63 -27.51 -27.06 -27.02 -26.78 -26.66 -26.61 11.24 7.90 5.01 4.07 2.79 2.11 1.64 -0.09 -1.34 -4.47 -7.00 -8.43 -11.00 -14.19 -18.24 -20.10 -23.28 -7.02 -5.57 -5.06 -4.77 -4.60 -4.44 -4.26 -4.14 -3.97 -4.00 -3.86 -3.84 -3.62 -3.55 -3.46 -3.34 -3.30 -148.17 -162.45 -173.51 177.87 171.65 166.08 160.40 155.01 149.63 144.03 139.02 134.24 129.30 124.42 119.42 114.26 109.29 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .062” total thickness with a .014” Getek top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH118-89PCB900) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 900 MHz 20.4 dB 15 dB 12 dB +24.2 dBm All passive components are of size 0603 unless otherwise noted. Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current ID=C2 C=1000 pF size 0805 The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 Component R1 is shown in the silkscreen but is not used for this configuration. ID=C3 C=56 pF 5.6 V L2 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. +40 dBm (+11 dBm / tone, 1 MHz spacing) ID=C1 C=1e5 pF size 1206 Vcc = +5 V ID=C4 C=100 pF IND ID=L1 L=33 nH size 0805 ID=L2 R=0 Ohm +18.2 dBm ID=C5 C=100 pF ID=L3 L=2.7 nH ID=C7 C=8.2 pF 4 dB +5 V 160 mA NET="AH118" ID=C9 C=2 pF C7 should be placed at the silk screen marker 'C' on the WJ evaluation board. C9 should be placed at the silk screen marker '7' on the WJ evaluation board. The capacitor should be placed 6.1° @ 0.9GHz from pin 1 of the AH118 The capacitor should be placed 15.8° @ 0.9GHz from pin 3 of the AH118. S21 vs. Frequency ACPR vs. Channel Power 22 -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz S 2 1 (d B ) 21 -50 20 19 -60 18 +25°C 17 800 -40°C +85°C -70 850 900 950 12 1000 Frequency (MHz) 13 14 S11 vs. Frequency 16 17 18 19 S22 vs. Frequency 0 0 +25°C -5 -40°C +85°C -10 -5 S 2 2 (d B ) S 1 1 (d B ) 15 Output Channel Power (dBm) -15 -20 -10 -15 -20 -25 -25 -30 800 -30 800 850 900 Frequency (MHz) 950 1000 +25°C 850 -40°C 900 +85°C 950 1000 Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 1900 MHz Application Circuit (AH118-89PCB1900) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 1900 MHz 16.8 dB 12 dB 20 dB +24.7 dBm +5V The d iode D1 is used as over-voltage protection on the e va luation. b oard s. It is not specifi cally requ ired in the fina l circuit layout in a s ystem using a DC regul ator. Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current C AP ID =C 2 C =10 00 p F CA P ID= C 3 C= 5 6 p F L 3-- 0 ohm resistor can be rem oved from th e final layout. P OR T P =1 Z =50 O h m CA P ID =C 4 C= 5 6 p F IN D ID =L 1 L =1 8 nH IND ID= L2 L= 4.7 n H +18 dBm C AP ID =C 7 C =2.7 pF 4.3 dB +5 V 160 mA C7 should b e place d a t the silk screen m a rker 'A' on the W J evaluation board or 4.6 deg @ 1.8 4GH z from pi n 1 of the AH11 8 C AP ID =C 5 C =56 pF R ES ID =L3 R =0 O hm S UB CK T ID = U1 N ET ="AH 11 8" 17 -5 S11,S22 (dB) 0 16 15 POR T P=2 Z= 5 0 Oh m CA P ID= C 9 C= 1.8 pF C9 should be plac ed at the silk screen m arker '5' on the e va luation bo ard o r 23 deg @ 1.9 G Hz from pin 3 of AH11 8. S11, S22 vs. Frequency Gain 18 ACPR vs. Channel Power -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz -50 -10 S11 -15 -60 S22 -20 14 13 1800 D1 D iod e 5.6 V Com ponen t R1 is shown in the si lkscre en but is not u sed fo r this configuration. +40.5 dBm (+11 dBm / tone, 1 MHz spacing) C AP ID =C 1 C =10 000 0 p F All passive com pone nts are of size 0603 unless otherwise note d. 1850 1900 Frequency (MHz) 1950 2000 -25 1.8 -70 1.85 1.9 1.95 2 12 Frequency (GHz) 13 14 15 16 17 18 19 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH118-89PCB2140) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Vcc = +5 V 2140 MHz 16.3 dB 15 dB 16 dB +24.7 dBm All passive components are of size 0603 unless otherwise noted. wCDMA Channel Power (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) ID=C3 C=1000 pF size 0805 The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. ID=C2 C=56 pF 5.6 V ID=L1 L=18 nH +40.5 dBm (+11 dBm / tone, 1 MHz spacing) ID=C1 C=1e5 pF size 1206 ID=C4 C=56 pF ID=L2 C=1.5 pF ID=C5 C=56 pF ID=L3 R=0 Ohm +16.7 dBm NET="AH118" Noise Figure Device / Supply Voltage Quiescent Current 4.8 dB +5 V 160 mA ID=C6 C=1.8 pF ID=C9 C=1.2 pF ACLR vs. Channel Power -35 17 -40 A C L R (d B c ) S 2 1 (d B ) S21 vs. Frequency 16 15 14 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -45 -50 -55 +25°C -40°C +85°C -60 2130 2150 2170 12 13 14 15 16 17 18 Output Channel Power (dBm) Frequency (MHz) S11 vs. Frequency S22 vs. Frequency 0 0 +25°C -40°C +85°C -5 S 2 2 (d B ) -5 S 1 1 (d B ) The capacitor should be placed 20.5° @ 2.14GHz from pin 3 of the AH118. The capacitor should be placed 32.6° @ 2.14GHz from pin 1 of the AH118 18 13 2110 C9 should be placed at the silk screen marker '4' on the WJ evaluation board. C6 should be placed at the silk screen marker "F" on the WJ evaluation board. -10 -10 -15 -15 -20 2110 -20 2110 +25°C 2130 2150 Frequency (MHz) 2170 2130 -40°C 2150 +85°C 2170 Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 70 MHz Reference Design Vcc = +5 V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current C=100000 pF Gain / Return Loss 26 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) C=1000 pF 5.6 V 24 -5 22 -10 20 -15 18 -20 The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. S 1 1 , S 2 2 (d B ) 70 MHz 24.2 dB 17 dB 16 dB +23.6 dBm G a in (d B ) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 L=180 nH NET="AH118" C=1000 pF C=1000 pF L=47 nH +41 dBm 4.8 dB +5 V 160 mA C=100 pF 16 -25 50 60 70 Frequency (MHz) 80 90 150 MHz Reference Design Vcc = +5 V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current C=100000 pF 24 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) C=1000 pF 5.6 V 23 -5 22 -10 21 -15 20 -20 19 -25 S 1 1 , S 2 2 (d B ) 150 MHz 23 dB 21 dB 14 dB +23.5 dBm G a in (d B ) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Gain / Return Loss The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L=82 nH NET="AH118" C=1000 pF C=82 pF +40 dBm 4.9 dB +5 V 160 mA L=18 nH 120 130 140 150 160 Frequency (MHz) 170 180 340 MHz Reference Design +5V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current Gain / Return Loss 22 C=1e5 pF 5 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 21 5.6 V 0 20 -5 19 -10 18 -15 S 1 1 , S 2 2 (d B ) 340 MHz 20.6 dB 14 dB 13 dB +24 dBm G a in (d B ) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 L=100 nH C=1000 pF R=1.8 Ohm L=8.2 nH +41.4 dBm 5.1 dB +5 V 160 mA NET="AH118" C=1000 pF L=15 nH C=18 pF 17 C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. C=5.6 pF -20 260 280 300 320 340 360 Frequency (MHz) 380 400 420 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 6 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 450 MHz Reference Design Vcc = +5 V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current C=1e5 pF Gain / Return Loss 23 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) 0 DB(|S(2,2)|) (R) 5.6 V +40 dBm 5.7 dB +5 V 160 mA 22 -5 21 -10 20 -15 19 -20 S 1 1 , S 2 2 (d B ) 450 MHz 22 dB 15 dB 19 dB +24 dBm G a in (d B ) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L=22 nH NET="AH118" C=1000 pF L=3.3 nH C=1000 pF C=27 pF 18 -25 400 420 440 460 Frequency (MHz) 480 500 2450 MHz Reference Design ID=C1 C=1e5 pF size 1206 Vcc = +5 V Gain / Return Loss (+11 dBm / tone, Df=1 MHz) Supply Voltage Current 5 14 0 12 -5 All passive components are of size 0603 unless otherwise noted. ID=C2 C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. ID=D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. +38 dBm 10 -10 8 -15 DB(|S(1,1)|) (R) +5 V 160 mA S11, S22 (dB) 2450 MHz 14.4 dB 14 dB 15 dB +25 dBm Gain (dB) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 16 DB(|S(2,1)|) (L) 2.4 2.5 ID=L3 R=0 Ohm ID=C6 C=1.2 pF ID=C7 C=1.2 pF The center of this component should be placed .050" away from pin 1. 2.6 CAP ID=C5 C=56 pF NET="AH118" ID=C4 C=56 pF -20 ID=C3 C=56 pF size 0805 ID=L1 L=18 nH size 0805 ID=L2 L=5.6 nH DB(|S(2,2)|) (R) 6 2.3 L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. The center of this component should be placed .170" away from the center of C6. The center of this component should be placed .200" away from pin 3. Frequency (GHz) 3500 MHz Reference Design (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current +38.5 dBm 5.0 dB +5 V 160 mA 0 All passive components are of size 0603 unless otherwise noted. 12 -5 The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. 11 -10 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 10 -15 9 -20 Component R1 is shown in the silkscreen but is not used for this configuration. 8 -25 3.45 3.5 Frequency (GHz) 3.55 3.6 ID=C2 C=1000 pF ID=D1 5.6 V ID=L2 L=6.8 nH ID=C4 C=56 pF ID=C3 C=56 pF size 0805 ID=L1 L=18 nH size 0805 The center of this component should be placed .170" away from the center of C6. ID=C6 C=0.2 pF 3.4 ID=C1 C=100000 pF size 1206 Vcc = +5 V Gain / Return Loss 13 S 1 1 , S 2 2 (d B ) 3500 MHz 11 dB 14 dB 10 dB +23.5 dBm G a in (d B ) Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 NET="AH118" ID=C7 C=.8 pF The center of this component should be placed .050" away from pin 1. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 7 of 8 May 2006 AH118 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information AH118-89G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Product Marking Outline Drawing The component will be marked with an “AH118G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “AH118” or “E099” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: Land Pattern Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Rating Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tj -40 to +85 °C 92 °C / W 159 °C Notes: 1. The amplifier can be operated at 105 °C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 °C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 °C. 3. This corresponds to the typical biasing condition of +5V, 160 mA at an 85°C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 °C. MTTF vs. GND Tab Temperature 100000 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 8 of 8 May 2006