DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5529-2.1 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1800ESM12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. 1200V 2.2V 1800A 3600A External connection C1 C2 C3 E2 E3 Aux C G Aux E E1 External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM1800ESM12-A000 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM1800ESM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 85˚C 1800 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 3600 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 15625 W Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tvj = 125˚C 900 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1800ESM12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 32mm 20mm 175 Thermal resistance - transistor Continuous dissipation - Min. Typ. Max. Units - - 8 ˚C/kW - - 17.8 ˚C/kW - - 6 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM1800ESM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 75 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 90mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 1800A - 2.2 2.8 V VGE = 15V, IC = 1800A, , Tcase = 125˚C - 2.6 3.3 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 1800 A IFM Diode maximum forward current tp = 1ms - - 3600 A VF† Diode forward voltage IF = 2400A - 2.1 2.4 V IF = 2400A, Tcase = 125˚C - 2.1 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 200 - nF Cies Input capacitance LM Module inductance - - 10 - nH Internal transistor resistance - - 0.09 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 12500 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 10000 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1800ESM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 1800A - 1250 - ns Fall time VGE = ±15V - 190 - ns EOFF Turn-off energy loss VCE = 600V - 330 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.2Ω - 220 - ns L ~ 60nH - 200 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EO Turn-on energy loss - 100 - mJ Qg Gate charge - 20 - µC Qrr Diode reverse recovery charge IF = 1800A, VR = 50% VCES, - 210 - µC Irr Diode reverse current dIF/dt = 9000A/µs - 860 - A - 110 - mJ Min. Typ. Max. Units IC = 1800A - 11450 - ns Fall time VGE = ±15V - 190 - ns EOFF Turn-off energy loss VCE = 600V - 390 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.2Ω - 230 - ns L ~ 60nH - 340 - ns - 180 - mJ IF = 1800A, VR = 50% VCES, - 390 - µC dIF/dt = 8000A/µs - 1100 - A - 200 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM1800ESM12-A000 TYPICAL CHARACTERISTICS 3600 3600 Common emitter 3300 Tcase = 25˚C Common emitter 3300 Tcase = 125˚C 3000 3000 Vce is measured at power busbars and not the auxiliary terminals 2700 Collector current, IC - (A) Collector current, IC - (A) 2700 2400 2400 2100 2100 1800 1800 1500 1500 1200 1200 900 900 600 600 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 300 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 0 0 4.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 450 Conditions: Vcc = 600V Tc = 125°C 350 Rg = 1.2Ohms 400 350 Switching Energy, Esw - (mJ) 300 Switching Energy, Esw - (mJ) 0.5 Fig. 4 Typical output characteristics 400 250 200 150 100 300 250 200 150 100 50 Eoff Eon Erec 400 800 1200 Collector current, IC - (A) 1600 2000 Fig. 5 Typical switching energy vs collector current 6/10 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 300 Fig. 3 Typical output characteristics 0 0 Vce is measured at power busbars and not the auxiliary terminals 50 0 1.0 Conditions: Vcc = 600V IC = 1800A Tc = 125°C 1.2 Eoff Eon Erec 1.4 1.6 1.8 2 Gate Resistance , Rg - (Ohms) 2.2 2.4 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1800ESM12-A000 4800 3800 Tj = 25˚C Tj = 125˚C 4400 3600 3400 VF is measured at power busbars and not the auxiliary terminals 4000 3200 3000 3600 2800 Collector current, IC - (A) Forward current, IF - (A) 3200 2800 2400 2000 1600 2600 2400 2200 2000 1800 1600 1400 1200 1000 1200 800 400 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 800 T case = 125˚C 600 Vge =15V 400 Rg = 1.2 Ohms 200 Module IC Chip IC 0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Forward voltage, VF - (V) Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 2000 100 Tj = 125˚C Transient thermal impedance, Zth (j-c) - (°C/kW ) 1800 Reverse recovery current, Irr - (A) 1600 1400 1200 1000 800 600 400 Diode 10 Transistor 1 IGBT 200 Diode 0 0 200 400 600 800 1000 Reverse voltage, VR - (V) 1200 Fig. 9 Diode reverse bias safe operating area 1400 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.25 0.12 0.55 0.11 0.1 Pulse width, tp - (s) 3 2.51 47.15 5.76 48.75 1 4 3.47 257.21 7.35 256.75 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 1.78 3.89 4.12 4.24 7/10 DIM1800ESM12-A000 3500 DC collector current, IC - (A) 3000 2500 2000 1500 1000 500 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 140 Fig. 12 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1800ESM12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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