DIM400GCM33-A000 DIM400GCM33-A000 IGBT Chopper Module DS5613-1.1 June 2003 FEATURES ■ Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE(sat) * (typ) (max) IC IC(PK) (max) 3300V 3.2V 400A 800A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Choppers ■ Motor Controllers ■ Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM400GCM33-A000 is a 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 7 (E1) 1 (E1) 2 (K) 3 (C1) 4 (A) 6 (G1) 5 (C1) Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM400GCM33-A000 Note: When ordering, please use the whole part number. Outline type code: G (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM400GCM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 85˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 5216 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 80 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GCM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Thermal resistance - transistor arm Continuous dissipation - Min. Typ. Max. Units - - 24 ˚C/kW - - 48 ˚C/kW - - 6 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (both arms) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM400GCM33-A000 ELECTRICAL CHARACTERISTICS - PER ARM UNLESS OTHERWISE STATED Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 30 mA Gate leakage current (IGBT arm) VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage (IGBT arm) IC = 40mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 400A - 3.2 - V (IGBT arm) VGE = 15V, IC = 400A, , Tcase = 125˚C - 4.0 - V IF Diode forward current DC - 400 - A IFM Diode maximum forward current tp = 1ms - 800 - A VF† Diode forward voltage IF = 400A - 2.5 - V IF = 400A, Tcase = 125˚C - 2.5 - V Parameter Symbol ICES IGES Collector cut-off current Test Conditions Cies Input capacitance (IGBT arm) VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF Cres Reverse transfer capacitance (IGBT arm) VCE = 25V, VGE = 0V, f = 1MHz - 1.3 - nF LM Module inductance - per arm - - 25 - nH RINT Internal resistance - per arm - - 0.26 - mΩ SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 2600 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 2200 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GCM33-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM ONLY Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 1300 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 1800V - 350 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 570 - ns Rise time Cge = 68nF - 300 - ns EON Turn-on energy loss L ~ 100nH - 550 - mJ Qg Gate charge - 5 - µC Qrr Diode reverse recovery charge IF = 400A, VR = 1800V, - 180 - µC Irr Diode reverse recovery current dIF/dt = 1750A/µs - 240 - A Erec Diode reverse recovery energy - 230 - mJ Min. Typ. Max. Units IC = 400A - 1450 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 430 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 500 - ns Rise time Cge = 68nF - 350 - ns EON Turn-on energy loss L ~ 100nH - 800 - mJ Qrr Diode reverse recovery charge IF = 400A, VR = 1800V, - 340 - µC Irr Diode reverse recovery current dIF/dt = 1500A/µs - 320 - A Erec Diode reverse recovery energy - 430 - mJ Parameter Symbol td(off) tf tr Turn-off delay time Test Conditions Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM400GCM33-A000 TYPICAL CHARACTERISTICS 800 800 600 600 Common emitter. Tcase = 125˚C. Vce is measured at power busbars 700 and not the auxiliary terminals Collector current, IC - (A) Collector current, IC - (A) Common emitter. Tcase = 25˚C. 700 Vce is measured at power busbars and not the auxiliary terminals 500 500 400 400 300 300 200 200 Vge =20V Vge =15V Vge =12V Vge =10V 100 0 0 0 1 2 3 4 Collector-emitter voltage, Vce - (V) Vge =20V Vge =15V Vge =12V Vge =10V 100 5 0 6 Fig. 3 Typical output characteristics 1 2 3 4 5 6 Collector-emitter voltage, Vce - (V) 7 8 Fig. 4 Typical output characteristics 800 1400 Conditions: Tcase = 125˚C, IC = 400A, 1200 Vcc = 1800V, Cge = 68nF Conditions: Tcase = 125˚C, Rg = 4.7 Ohms, 700 Vcc = 1800V, Cge = 68nF 1000 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 600 500 400 300 800 600 400 200 Eon (mJ) Eoff (mJ) 100 Eon (mJ) Eoff (mJ) 200 Erec (mJ) 0 0 100 200 300 400 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/10 500 Erec (mJ) 0 3 4 5 6 7 8 9 Gate resistance, Rg - (ohms) 10 11 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GCM33-A000 800 900 Tj = 25˚C Tj = 125˚C 800 700 VF is measured at power busbars and not the auxiliary terminals Collector current, IC (A) Forward current, IF - (A) Chip 700 600 500 400 300 200 600 Module 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Forward voltage, VF - (V) 3.5 4 100 Tcase = 125˚C Vge = ±15V Rg(min) = 4.7Ω 0 0 500 1000 1500 2000 2500 3000 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics 3500 Fig. 8 Reverse bias safe operating area 700 100 Diode Transient thermal impedance, Zth (j-c) - (°C/kW ) Reverse recovery current, Irr - (A) 600 500 400 300 200 Transistor 10 IGBT 100 Diode 0 0 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.89 0.13 1.79 0.13 0.1 Pulse width, tp - (s) 3 7.88 48.03 15.77 48.03 1 4 9.56 248.53 19.11 248.53 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 5.63 5.80 11.26 5.80 7/10 DIM400GCM33-A000 800 700 DC collector current, IC - (A) 600 500 400 300 200 100 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 140 Fig. 11 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GCM33-A000 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Module outline type code: G Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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