DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 800A 1600A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DDM12-A000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised applications requiring high thermal cycling capability. 1(E1) 5(E1) 2(C2) 12(C2) 6(G1) 11(G2) 7(C1) 10(E2) 3(C1) 4(E2) Fig. 1 Dual switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 5 6 ORDERING INFORMATION 3 1 4 2 7 8 Order As: 9 DIM800DDM12-A000 Note: When ordering, please use the whole part number. 12 11 10 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM800DDM12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 85˚C 800 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 1600 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 6940 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 100 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1200V, V2 = 900V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 18 ˚C/kW - - 40 ˚C/kW - - 8 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM800DDM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 25 mA Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.2 2.6 V VGE = 15V, IC = 800A, , Tcase = 125˚C - 2.6 3.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A VF† Diode forward voltage IF = 800A - 2.1 2.4 V IF = 800A, Tcase = 125˚C - 2.1 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF Cies Input capacitance LM Module inductance - per arm - - 20 - nH Internal transistor resistance - per arm - - 0.27 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 5500 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 4500 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 800A - 1250 - ns Fall time VGE = ±15V - 170 - ns EOFF Turn-off energy loss VCE = 600V - 130 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 250 - ns L ~ 100nH - 250 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 80 - mJ Qg Gate charge - 9.0 - µC Qrr Diode reverse recovery charge IF = 800A, VR = 600V, - 80 - µC Irr Diode reverse current dIF/dt = 4200A/µs - 380 - A - 30 - mJ Min. Typ. Max. Units IC = 800A - 1500 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 600V - 160 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 400 - ns L ~ 100nH - 220 - ns - 120 - mJ IF = 800A, VR = 600V, - 160 - µC dIF/dt = 4000A/µs - 450 - A - 60 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM800DDM12-A000 TYPICAL CHARACTERISTICS 1600 Common emitter Tcase = 125˚C 1600 Common emitter Tcase = 25˚C 1400 Vce is measured at power busbars and not the auxiliary terminals 1400 Vce is measured at power busbars and not the auxiliary terminals 1200 Collector current, IC - (A) 1200 Collector current, IC - (A) 1000 1000 800 600 600 400 400 VGE = VGE = VGE = VGE = 200 0 0 800 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 10V 12V 15V 20V 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 0 0 4.0 Fig. 3 Typical output characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 180 350 Tc = 125˚C, Vce = 600V, 160 Rg = 2.7Ω Tc = 125˚C, Vce = 600V, IC = 800A 300 Switching energy, Esw - (mJ) 140 Switching energy, Esw - (mJ) 120 100 80 60 250 200 150 100 40 Eon Eoff Erec 20 0 Eon Eoff Erec 0 0 200 400 600 Collector current, IC - (A) 800 1000 Fig. 5 Typical switching energy vs collector current 6/10 50 2 4 8 6 10 Gate resistance, Rg - (ohms) 12 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 1600 2000 Tj = 25˚C Tj = 125˚C Tcase = 125˚C Vge =15V 1800 R = 2.7Ohms g VF is measured at power busbars and not the auxiliary terminals 1400 1600 1200 Collector current, IC - (A) Forward current, IF - (A) 1400 1000 800 600 1200 1000 800 600 400 400 200 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3.5 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics Module IC Chip IC 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 1400 Fig. 8 Reverse bias safe operating area 700 10000 Tcase =125˚C Tvj = 125˚C, Tc = 85˚C 1000 500 Collector current, IC - (A) Reverse recovery current, Irr - (A) 600 400 100 300 tp = 50µs tp = 100µs IC(max) DC tp = 1 ms 200 10 100 0 0 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 1400 1 1 10 100 10000 Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 Collector emitter voltage, Vce - (V) 7/10 DIM800DDM12-A000 1500 100 1400 1300 1200 1100 DC collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode Transistor 1000 10 900 800 700 600 500 400 IGBT Diode 1 0.001 1 Ri (˚C/KW) 0.4391 τi (ms) 0.045 Ri (˚C/KW) 1.5612 τi (ms) 0.0063516 0.01 2 3.1937 2.8869 5.7426 1.4746 0.1 Pulse width, tp - (s) 3 4.1465 21.7141 6.999 13.9664 1 Fig. 11 Transient thermal impedance 8/10 4 10.2356 152.6381 25.6068 111.7517 10 300 200 100 0 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) Fig. 12 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 PACKAGE DETAILS For further package information please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 13 15 15 5 1 4 2 11.85 3 57 24 65 6 16 7 9 13 26 12 43.3 57 65 18 8 11 10 14 11.5 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3 Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Nominal weight: 1050g Module outline type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 DIM800DDM12-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5528-1 Issue No. 1.1 March 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com