DTA125TUA / DTA125TKA / DTA125TSA Transistors Digital transistor (built-in resistor) DTA125TUA / DTA125TKA / DTA125TSA Each lead has same dimensions (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) ROHM : UMT3 EIAJ : SC-70 Junction temperature Tj Tstg Storage temperature 200 Pc 300 150 −55 ∼ +150 (1) 2.8 mW 0.3to0.6 °C °C Package Marking Packaging code Basic ordering unit (pieces) UMT3 9A SMT3 9A T146 3000 SPT − T106 3000 DTA125TSA 4 2 3Min. DTA125TSA 3 DTA125TKA (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) (15Min.) DTA125TUA Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 !Package, marking, and packaging specifications Part No. (2) 1.6 1.1 V mA 0.95 0.95 1.9 2.9 −5 −100 0.8 VEBO IC (3) V V Emitter-base voltage Collector current Collector power DTA125TUA / DTA125TKA dissipation DTA125TSA 0to0.1 Unit −50 −50 0.4 Limits VCBO VCEO 2.0 (1) 0.1to0.4 0.15 Symbol 1.3 0to0.1 0.15 0.2 2.1 DTA125TKA Parameter 0.9 (2) (3) 0.3 1.25 !Absolute maximum ratings (Ta = 25°C) Collector-base voltage Collector-emitter voltage 0.65 0.65 DTA125TUA 0.7 !External dimensions (Units : mm) !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. TP 5000 0.45 2.5 0.5 0.45 5 (1) (2) (3) Taping specifications (1) Emitter (2) Collector (3) Base ROHM : SPT EIAJ : SC-72 !Electrical characteristics (Ta = 25°C) !Circuit schematic Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BVCBO BVCEO −50 −50 − − − − V V IC = −50µA IC = −1mA BVEBO − − V µA IE = −50µA ICBO −5 − − Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage − − 100 − − 250 −0.3 600 µA V − VEB = −4V IC = −0.5mA , IB = −0.05mA IC = −1mA , VCE = −5V 140 − 200 260 − kΩ MHz IEBO VCE(sat) DC current transfer ratio hFE Input resistance R1 Transition frequency fT ∗ Transition frequency of the device. 250 −0.5 −0.5 Conditions R1 E VCB = −50V − VCE = −10V , IE = 5mA , f = 100MHz C B E : Emitter C : Collector B : Base ∗