NLSF308 Quad Gate 2−Input AND The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. • High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28% VCC • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Designed for 2 V to 5.5 V Operating Range • Low Noise: VOLP = 0.8 V (Max) • Function Compatible with Other Standard Logic Families • QFN−16 Package • Latchup Performance Exceeds 300 mA • ESD Performance: HBM > 2000 V; Machine Model > 200 V • Chip Complexity: 24 FETs or 6 Equivalent Gates http://onsemi.com MARKING DIAGRAM 16 1 NLSF 308 ALYW QFN−16 MN SUFFIX CASE 485G (Top View) A WL, L YY, Y WW, W = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping† NLSF308MN QFN−16, 3x3 123 Units/Rail NLSF308MNR2 QFN−16, 3x3 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 1 1 Publication Order Number: NLSF308/D NLSF308 A1 B1 A2 B2 A3 B3 A4 B4 15 1 16 Y1 FUNCTION TABLE Inputs 3 5 4 Y2 Y = AB 8 7 9 Y3 A B Y L L H H L H L H L L L H 12 10 13 Y4 Figure 1. LOGIC DIAGRAM B1 A1 VCC B4 Y1 16 15 14 13 1 12 A4 NC 2 NLSF308 MN Package 11 NC A2 3 (Top View) 10 Y4 B2 4 9 B3 GND Y2 7 8 A3 6 Y3 5 Figure 2. Pin Assignment (QFN−16) http://onsemi.com 2 Output NLSF308 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage –0.5 to + 7.0 V Vin DC Input Voltage –0.5 to + 7.0 V Vout DC Output Voltage –0.5 to VCC + 0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air 450 mW Tstg Storage Temperature –65 to + 150 °C NOTE: Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. RECOMMENDED OPERATING CONDITIONS ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ Symbol Parameter Min Max Unit 2.0 5.5 V DC Input Voltage 0 5.5 V DC Output Voltage 0 VCC V −40 + 85 °C 0 0 100 20 ns/V VCC DC Supply Voltage Vin Vout TA Operating Temperature tr, tf Input Rise and Fall Time VCC = 3.3 V ±0.3 V VCC = 5.0 V ±0.5 V DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.50 VCC x 0.7 VIH Minimum High−Level Input Voltage 2.0 3.0 to 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 to 5.5 VOH Minimum High−Level Output Voltage VOL Maximum Low−Level Output Voltage TA = 25°C VCC V Typ TA = − 40 to 85°C Max Min 1.50 VCC x 0.7 0.50 VCC x 0.3 Vin = VIH or VIL IOH = −50 A 2.0 3.0 4.5 1.9 2.9 4.4 Vin = VIH or VIL IOH = −4 mA, IOH = −8 mA 3.0 4.5 2.58 3.94 Vin = VIH or VIL IOL = 50 A 2.0 3.0 4.5 Vin = VIH or VIL IOL = 4 mA IOL = 8 mA Max 2.0 3.0 4.5 Unit V 0.50 VCC x 0.3 V V 1.9 2.9 4.4 2.48 3.80 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 V Iin Maximum Input Leakage Current Vin = 5.5V or GND 0 to 5.5 ± 0.1 ± 1.0 A ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20.0 A http://onsemi.com 3 NLSF308 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Typ Max Min Max Unit VCC = 3.3 ± 0.3 V, CL = 15 pF, CL = 50 pF 6.2 8.7 8.8 12.3 1.0 1.0 10.5 14.0 ns VCC = 5.0 ± 0.5 V, CL = 15 pF, CL = 50 pF 4.3 5.8 5.9 7.9 1.0 1.0 7.0 9.0 4 10 Symbol Parameter Test Conditions tPLH, tPHL Maximum Propagation Delay, A or B to Y Cin Min TA = − 40 to 85°C Maximum Input Capacitance 10 pF Typical @ 25°C, VCC = 5.0 V CPD 18 Power Dissipation Capacitance (Note 1) pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V) TA = 25°C Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL −0.3 −0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V Symbol Characteristic TEST POINT VCC A or B 50% OUTPUT DEVICE UNDER TEST GND tPLH Y tPHL CL * 50% VCC *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit http://onsemi.com 4 NLSF308 PACKAGE DIMENSIONS QFN−16 MN SUFFIX CASE 485G−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. −X− A M −Y− DIM A B C D E F G H J K L M N P R B N 0.25 (0.010) T 0.25 (0.010) T J R C 0.08 (0.003) T −T− K SEATING PLANE E H G L 5 8 4 9 1 12 F 16 D 13 P NOTE 3 0.10 (0.004) M T X Y http://onsemi.com 5 MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.23 0.28 1.75 1.85 1.75 1.85 0.50 BSC 0.875 0.925 0.20 REF 0.00 0.05 0.35 0.45 1.50 BSC 1.50 BSC 0.875 0.925 0.60 0.80 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.009 0.011 0.069 0.073 0.069 0.073 0.020 BSC 0.034 0.036 0.008 REF 0.000 0.002 0.014 0.018 0.059 BSC 0.059 BSC 0.034 0.036 0.024 0.031 NLSF308 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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