NUP4304MR6 Advance Information Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com NUP4304MR6 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). PIN CONFIGURATION AND SCHEMATIC Features • Low Capacitance (1.5 pF Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground 6 Forward Current 1/O 3 4 I/O 5 4 2 3 LGd LG = Specific Device Code d = Date Code ORDERING INFORMATION Symbol Value Unit VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current 5 VN TSOP−6 CASE 318F PLASTIC MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Reverse Voltage VP 2 1 USB 1.1 and 2.0 Data Line Protection T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection Rating 6 I/O MARKING DIAGRAM Applications • • • • • • • • I/O 1 Device Package Shipping† NUP4304MR6 TSOP−6 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A 2.0 1.0 0.5 1. FR−5 = 1.0 0.75 0.062 in. This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. P0 1 Publication Order Number: NUP4304MR6/D NUP4304MR6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJA 556 °C/W Lead Solder Temperature Maximum 10 Seconds Duration TL 260 °C Junction Temperature TJ −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Thermal Resistance Junction−to−Ambient ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode) Symbol Min Typ V(BR) 70 − − Vdc IR − − − − − − 2.5 30 50 Adc Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD − 0.8 1.5 pF Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD − 1.6 3 pF VF − − − − − − − − 715 855 1000 1250 mVdc Characteristic Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com 2 NUP4304MR6 Curves Applicable to Each Cathode 10 IR , REVERSE CURRENT (µA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 3 8 50 NUP4304MR6 PACKAGE DIMENSIONS TSOP−6 CASE 318F−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. A L 6 5 4 2 3 B S 1 D G M J C 0.05 (0.002) H K DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0 10 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0 10 2.50 3.00 MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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