DATA SHEET PHOTOCOUPLER PS2561-1,-2, PS2561L-1,-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2561L-1-E3, E4, F3, F4, PS2561L-2-E3, E4 • UL approved: File No. E72422 (S) • CSA approved: No. CA 101391 • BSI approved: No. 7112 • SEMKO approved: No. 9317144 • NEMKO approved: No. A21409 • DEMKO approved: No. 300535 • FIMKO approved: No. 167265-08 • VDE0884 approved (Option) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12989EJ5V0DS00 (5th edition) Date Published January 2001 NS CP(K) Printed in Japan The mark • shows major revised points. © 1992, 2001 PS2561-1,-2,PS2561L-1,-2 PACKAGE DIMENSIONS (UNIT : mm) DIP Type (New package) PS2561-1 4.6±0.35 3 6.5 +0.7 –0.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 7.62 3.5±0.3 3.2±0.4 4.15±0.4 TOP VIEW 4 0 to 15˚ +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 Caution New package 1-ch only DIP Type PS2561-1 9.7±0.5 3 0 to 15˚ +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 3.3±0.5 4.15±0.4 2 7.62 3.5±0.3 1 TOP VIEW 7 6 5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1 0.50±0.10 1.25±0.15 0.25 M 2.54 2.54 2 8 6.5 +0.7 –0.5 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 +0.7 –0.5 3.3±0.5 4.15±0.4 PS2561-2 TOP VIEW 4 2 3 4 7.62 3.5±0.3 4.6±0.5 Data Sheet P12989EJ5V0DS 0 to 15˚ +0.1 0.25 –0.05 PS2561-1,-2,PS2561L-1,-2 Lead Bending Type (New package) PS2561L-1 TOP VIEW 4.6±0.35 4 3 6.5 +0.7 –0.5 1. Anode 2. Cathode 3. Emitter 4. Collector 2 0.1 +0.1 –0.05 3.5±0.3 0.25 +0.1 –0.05 1 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 0.15 Caution New package 1-ch only Lead Bending Type PS2561L-2 PS2561L-1 0.1 +0.1 –0.05 3.5±0.3 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 6 5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1 1.25±0.15 0.25 M 7 2 3 4 0.25 +0.1 –0.05 2 0.25 +0.1 –0.05 1 8 6.5 +0.7 –0.5 6.5 +0.7 –0.5 1. Anode 2. Cathode 3. Emitter 4. Collector TOP VIEW 9.7±0.5 3 3.5±0.3 4 2.54 0.15 0.1 +0.1 –0.05 TOP VIEW 4.6±0.5 0.9±0.25 9.60±0.4 0.15 Data Sheet P12989EJ5V0DS 3 PS2561-1,-2,PS2561L-1,-2 Lead Bending Type For Long Creepage Distance PS2561L2-1 PS2561L1-1 TOP VIEW 4 4 1 2 1 0.25 +0.1 –0.05 3.5±0.3 3.5±0.3 10.16 11.8 +0.2 –0.5 0.25 M 0.25 +0.1 –0.05 0.25 2.54 1.25±0.15 2 0.9±0.25 1.25±0.15 0 to 15˚ 3 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 +0.7 –0.5 6.5 +0.7 –0.5 1. Anode 2. Cathode 3. Emitter 4. Collector 10.16 3.15±0.35 3.85±0.4 TOP VIEW 4.6±0.5 3 0.25±0.2 4.6±0.5 0.50±0.10 0.25 M 2.54 MARKING EXAMPLE PS2561-1 PS2561-2 No. 1 pin Mark No. 1 pin Mark 2561 M 003 M Assembly Lot 0 03 M Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Standard PKG New PKG 4 PS2561-2 M 003 Made in Japan Made in Taiwan Blank F Data Sheet P12989EJ5V0DS 0 03 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Standard PKG New PKG E Country Assembled Type Number Assembly Lot Made in Japan Made in Taiwan Blank F PS2561-1,-2,PS2561L-1,-2 ORDERING INFORMATION Part Number PS2561-1 Package 4-pin DIP Packing Style Magazine case 100 pcs Safety Standard Approval Standard products PS2561L-1 (UL, CSA, BSI, PS2561L1-1 NEMKO, SEMKO, PS2561L2-1 DEMKO, FIMKO PS2561L-1-E3 Embossed Tape 1 000 pcs/reel Appliction Part *1 Number PS2561-1 approved) PS2561L-1-E4 PS2561L-1-F3 Embossed Tape 2 000 pcs/reel PS2561L-1-F4 PS2561-2 8-pin DIP Magazine case 45 pcs PS2561-2 PS2561L-2 PS2561L-2-E3 Embossed Tape 1 000 pcs/reel PS2561L-2-E4 PS2561-1-V 4-pin DIP Magazine case 100 pcs PS2561L-1-V VDE0884 approved PS2561-1 products (Option) PS2561L1-1-V PS2561L2-1-V PS2561L-1-V-E3 Embossed Tape 1 000 pcs/reel PS2561L-1-V-E4 PS2561L-1-V-F3 Embossed Tape 2 000 pcs/reel PS2561L-1-V-F4 PS2561L-2-V 8-pin DIP Magazine case 45 pcs PS2561-2 PS2561L-2-V PS2561-2-V-E3 Embossed Tape 1 000 pcs/reel PS2561L-2-V-E4 *1 For the application of the Safety Standard, following part number should be used. Data Sheet P12989EJ5V0DS 5 PS2561-1,-2,PS2561L-1,-2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2561-1, PS2561L-1 Diode PS2561-2, PS2561L-2 Reverse Voltage VR 6 V Forward Current (DC) IF 80 mA Power Dissipation Derating Power Dissipation Peak Forward Current Transistor Unit *1 ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 6 Data Sheet P12989EJ5V0DS PS2561-1,-2,PS2561L-1,-2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 Rise Time tr *2 tf Fall Time VCC = 10 V, IC = 2 mA, RL = 100 Ω MIN. TYP. MAX. Unit 1.17 1.4 V 5 µA 50 80 200 pF 100 nA 400 % 0.3 V Ω 11 10 0.5 pF 3 µs 5 *1 CTR rank (only PS2561-1, PS2561L-1) L : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) *2 Test circuit for switching time Pulse Input VCC PW = 100 µ s Duty Cycle = 1/10 IF 50 Ω VOUT RL = 100 Ω Data Sheet P12989EJ5V0DS 7 PS2561-1,-2,PS2561L-1,-2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2561-1 PS2561L-1 100 PS2561-2 PS2561L-2 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 150 100 PS2561-2 PS2561L-2 1.2 mW/˚C 0 150 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE TA = +100 ˚C +60 ˚C +25 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) 25 70 50 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 1.5 mW/˚C 50 100 100 10 1 – 50 –25 0 25 50 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) Ambient Temperature TA (˚C) 8 PS2561-1 PS2561L-1 Data Sheet P12989EJ5V0DS 1.0 PS2561-1,-2,PS2561L-1,-2 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 450 VCE = 5 V Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 400 350 300 200 150 100 50 0 100 Sample A B C 250 0.05 0.1 1 5 10 50 Forward Current IF (mA) Ambient Temperature TA (˚C) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 1 000 IC = 2 mA, VCC = 10 V, CTR = 290 % 10 td ts 1 tf IF = 5 mA, VCC = 5 V, CTR = 290 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) 0.5 ts 100 10 tr 0.1 10 50 100 1 100 5 k 10 k 500 1 k FREQUENCY RESPONSE 50 k 100 k LONG TERM CTR DEGRADATION –5 100 Ω –15 RL = 1 kΩ TYP. 1.0 CTR (Relative Value) Normalized Gain GV 5 k 10 k 1.2 IF = 5 mA, VCE = 5 V –10 500 1 k Load Resistance RL (Ω) Load Resistance RL (Ω) 0 td 0.8 IF = 5 mA TA = 25 ˚C 0.6 IF = 5 mA TA = 60 ˚C 0.4 0.2 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) Remark 0 102 103 104 105 Time (Hr) The graphs indicate nominal characteristics. Data Sheet P12989EJ5V0DS 9 PS2561-1,-2,PS2561L-1,-2 TAPING SPECIFICATIONS (UNIT : mm) 1.55±0.1 4.5 MAX. 10.3±0.1 7.5±0.1 φ 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2561L-1-E3 PS2561L-1-E4 Outline and Dimensions (Reel) 1.6 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 250 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 10 Data Sheet P12989EJ5V0DS PS2561-1,-2,PS2561L-1,-2 1.55±0.1 4.5 MAX. 10.3±0.1 7.5±0.1 φ 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2561L-1-F3 PS2561L-1-F4 Outline and Dimensions (Reel) 1.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 2 000 pcs/reel Data Sheet P12989EJ5V0DS 11 PS2561-1,-2,PS2561L-1,-2 4.5 MAX. 10.3±0.1 7.5±0.1 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 4.0±0.1 10.4±0.1 1.55±0.1 12.0±0.1 0.3 Tape Direction PS2561L-2-E4 PS2561L-2-E3 Outline and Dimensions (Reel) 1.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 12 Data Sheet P12989EJ5V0DS PS2561-1,-2,PS2561L-1,-2 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 235 °C or below (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. Data Sheet P12989EJ5V0DS 13 PS2561-1,-2,PS2561L-1,-2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Speck Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test, procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak Highest permissible overvoltage UTR 8 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 175 400 700 °C mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 14 Data Sheet P12989EJ5V0DS 12 9 Ω PS2561-1,-2,PS2561L-1,-2 [MEMO] Data Sheet P12989EJ5V0DS 15 PS2561-1,-2,PS2561L-1,-2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is current as of January, 2001. The information is subject to change without notice. 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