ETC 2SB1361P

Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2052
Unit: mm
●
●
■ Absolute Maximum Ratings
(TC=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–150
V
Collector to emitter voltage
VCEO
–150
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–15
A
Collector current
IC
–9
A
dissipation
100
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
3
■ Electrical Characteristics
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
Parameter
Collector power TC=25°C
21.0±0.5
15.0±0.2
●
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics
Wide area of safe operation (ASO)
High transition frequency fT
Full-pack package which can be installed to the heat sink with
one screw
5.0±0.2
3.2
16.2±0.5
12.5
3.5
Solder Dip
●
15.0±0.3
11.0±0.2
0.7
■ Features
10.9±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
W
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –150V, IE = 0
–50
µA
Emitter cutoff current
IEBO
VEB = –3V, IC = 0
–50
µA
hFE1
VCE = –5V, IC = –20mA
20
hFE2*
VCE = –5V, IC = –1A
60
20
Forward current transfer ratio
200
hFE3
VCE = –5V, IC = –7A
Base to emitter voltage
VBE
VCE = –5V, IC = –7A
Collector to emitter saturation voltage
VCE(sat)
IC = –7A, IB = – 0.7A
Transition frequency
fT
VCE = –5V, IC = – 0.5A, f = 1MHz
15
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
270
pF
*h
FE2
–1.8
–2.0
V
V
Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
1
Power Transistors
2SB1361
PC — Ta
IC — VCE
100
80
60
(1)
40
–12
TC=25˚C
–10
20
–10
–200mA
–8
–150mA
–100mA
–80mA
–6
–60mA
–4
–40mA
–20mA
–2
(2)
(3)
20
40
60
80 100 120 140 160
–2
–8
–10
–3
TC=100˚C
25˚C
–25˚C
– 0.1
– 0.03
–3
–10
–10
–12
–30
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.1 – 0.3
–100
–1
–3
–10
–30
–100
Collector current IC (A)
Cob — VCB
Area of safe operation (ASO)
–100
10000
IE=0
f=1MHz
TC=25˚C
Collector current IC (A)
–30
1000
300
Non repetitive pulse
TC=25˚C
ICP
t=10ms
–10
–3
IC
100ms
–1
DC
– 0.3
100
– 0.1
30
– 0.03
–3
–10
–30
–100
Collector to base voltage VCB (V)
– 0.01
–1
–3
–10
–30
–1
–2
–3
Base to emitter voltage VBE (V)
fT — IC
VCE=–5V
Collector current IC (A)
3000
0
1000
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–6
IC/IB=10
10
–1
–4
hFE — IC
–30
– 0.3
Collector output capacitance Cob (pF)
–4
1000
–1
–6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
– 0.01
– 0.1 – 0.3
100˚C
0
0
Ambient temperature Ta (˚C)
–1
–8
–2
0
0
25˚C
TC=–25˚C
–10mA
0
2
VCE=–5V
IB=–300mA
Collector current IC (A)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3W)
IC — VBE
–12
Collector current IC (A)
Collector power dissipation PC (W)
120
–100 –300 –1000
Collector to emitter voltage VCE (V)
VCE=–5V
f=1MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
Collector current IC (A)
–10
Power Transistors
2SB1361
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR