Power Transistors 2SB0951, 2SB0951A (2SB951, 2SB951A) Silicon PNP epitaxial planar type Darlington Unit: mm ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB0951 Collector to emitter voltage 2SB0951 Rating −60 VCBO −60 VCEO 4.2±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 2.54±0.3 V 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 V VEBO −7 V Peak collector current ICP −12 A Collector current IC −8 A PC 45 W TC = 25°C Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 −80 2SB0951A 1.3±0.2 1.4±0.1 5.08±0.5 −80 2SB0951A 5.5±0.2 Unit Emitter to base voltage Collector power dissipation 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 Solder Dip (4.0) ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A Internal Connection C B 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C Parameter Symbol 2SB0951 Collector cutoff current ICBO 2SB0951A Conditions Min Max Unit VCB = −60 V, IE = 0 −100 µA VCB = −80 V, IE = 0 −100 IEBO VEB = −7 V, IC = 0 VCEO IC = −30 mA, IB = 0 Forward current transfer ratio hFE1 * VCE = −3 V, IC = −4 A 2 000 hFE2 VCE = −3 V, IC = −8 A 500 Collector to emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA Base to emitter saturation voltage VBE(sat) IC = −4 A, IB = −8 mA Emitter cutoff current Collector to emitter voltage 2SB0951 Typ −2 −60 mA V −80 2SB0951A 10 000 −1.5 −2 V V fT VCE = −10 V, IC = −1 A, f = 1 MHz 20 MHz Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA, 0.5 µs Storage time tstg VCC = −50 V 2 µs Fall time tf 1 µs Transition frequency Note) *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0951, 2SB0951A Power Transistors PC T a IC VCE (1) 20 –5 – 0.8mA –4 – 0.6mA –3 – 0.4mA –2 (2) (3) – 0.2mA –1 (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –10 (3) –3 (2) (1) –1 Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 –10 TC=–25˚C 25˚C 100˚C –3 –1 – 0.3 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –3 104 –25˚C 103 –1 –3 –10 Collector current IC (A) –3 –10 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –10 (1) (2) (3) –3 –1 – 0.1 – 0.1 –10 –1 –3 –10 Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C 300 100 Non repetitive pulse TC=25˚C –30 ICP –10 IC t=1ms –3 10ms DC –1 – 0.3 30 – 0.1 10 3 1 – 0.1 – 0.3 – 0.3 Collector current IC (A) 1000 25˚C –1 –100 Collector current IC (A) Collector output capacitance Cob (pF) Forward current transfer ratio hFE –1 3000 – 0.3 – 0.3 Collector current IC (A) Cob VCB VCE=–3V TC=100˚C – 0.1 – 0.1 – 0.3 hFE IC 105 –25˚C VBE(sat) IC –30 Collector current IC (A) 102 – 0.1 –5 TC=100˚C –1 – 0.3 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –4 25˚C –3 VBE(sat) IC –100 – 0.3 2 –3 –10 Collector to emitter voltage VCE (V) VCE(sat) IC –100 – 0.1 – 0.1 –2 –30 2SB0951 10 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –6 IC/IB=500 – 0.03 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 2SB0951A 30 TC=25˚C –7 Base to emitter saturation voltage VBE(sat) (V) 40 –100 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) VCE(sat) IC –8 Collector current IC (A) Collector power dissipation PC (W) 50 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB0951, 2SB0951A Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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