Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB0951 (2SB951) and 2SB0951A (2SB951A) Unit: mm ■ Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to 2SD1277 emitter voltage 2SD1277A Ratings 0.7±0.1 Unit 60 VCBO VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 1 V 80 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C 45 PC 1.4±0.1 5.08±0.5 60 Emitter to base voltage Collector power TC=25°C φ3.1±0.1 V 80 VCEO 2.7±0.2 7.5±0.2 16.7±0.3 Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 ● 5.5±0.2 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw ● 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 W 2 B 150 ˚C –55 to +150 ˚C E ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Collector cutoff 2SD1277 current 2SD1277A ICBO IEBO Emitter cutoff current Collector to emitter 2SD1277 voltage 2SD1277A Forward current transfer ratio Conditions max 100 VCB = 80V, IE = 0 100 VEB = 7V, IC = 0 2 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 2000 500 hFE2 VCE = 3V, IC = 8A VCE(sat) IC = 4A, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 typ VCB = 60V, IE = 0 Collector to emitter saturation voltage *h min IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V Unit µA mA V 80 10000 1.5 2 20 V V MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE1 Q P 2000 to 5000 4000 to 10000 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1277, 2SD1277A PC — Ta IC — VCE 40 30 20 (2) 10 TC=25˚C 10 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (3) (4) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) VCB(sat) — IC hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 0.1 0.03 0.3 1 3 10 t=10ms IC 3 1ms DC 1 0.3 0.01 1 3 10 30 2SD1277A 2SD1277 0.1 0.03 100 300 Collector to emitter voltage VCE 300 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP –25˚C 10 0.1 30 103 10 25˚C 1000 0.3 Area of safe operation (ASO) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Collector current IC (A) 100 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 Collector current IC (A) Collector current IC (A) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 12 Collector current IC (A) Collector power dissipation PC (W) 50 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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