Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.0 4.1±0.2 0.85 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 7 ● 1.0 0. ● 2.5±0.1 1.5 R0.9 R0.9 R ■ Features 1.0±0.1 0.4 1.5 ■ Absolute Maximum Ratings (Ta=25˚C) 3 * Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter Collector cutoff current 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Symbol Conditions ICBO VCB = 15V, IE = 0 min typ max Unit 1 µA 10 µA ICEO VCE = 15V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V 150mA* Forward current transfer ratio hFE VCE = 10V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA* 1000 2500 Transition frequency fT VCB = 20V, IE = –20mA, f = 200MHz 55 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 0.4 V MHz 15 *2 pF Pulse measurement 1 Transistor 2SD1458 PC — Ta IC — VCE 200 0.8 0.6 0.4 0.2 2.0 IB=100µA 90µA 80µA 70µA 160 120 60µA 50µA 40µA 80 30µA 20µA 40 25˚C Ta=75˚C –25˚C 1.2 0.8 0.4 0 80 120 160 200 0 0 2 4 6 8 10 VCE(sat) — IC 30 1500 1 Ta=75˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 20 16 12 8 4 0 1 3 10 25˚C –25˚C 30 500 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 24 100 Collector to base voltage VCB (V) 2.0 VCB=10V Ta=25˚C 1000 25˚C 1.6 300 Ta=75˚C 2000 3 1.2 VCE=10V 2500 10 0.8 fT — I E 3000 Forward current transfer ratio hFE IC/IB=10 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 0.3 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 1.6 10µA 0 Collector output capacitance Cob (pF) VCE=10V Collector current IC (A) 1.0 2.4 Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (W) 1.2 10 250 200 150 100 50 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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