ETC 2SD1458

Transistor
2SD1458
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
1.0
4.1±0.2
0.85
4.5±0.1
2.4±0.2 2.0±0.2 3.5±0.1
●
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
7
●
1.0
0.
●
2.5±0.1
1.5 R0.9
R0.9
R
■ Features
1.0±0.1
0.4
1.5
■ Absolute Maximum Ratings
(Ta=25˚C)
3
*
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
1.5
A
Collector current
IC
0.7
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
Parameter
Collector cutoff current
0.45±0.05
2
2.5
1:Base
2:Collector
3:Emitter
1
1.25±0.05
0.55±0.1
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Symbol
Conditions
ICBO
VCB = 15V, IE = 0
min
typ
max
Unit
1
µA
10
µA
ICEO
VCE = 15V, IB = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
20
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
15
V
150mA*
Forward current transfer ratio
hFE
VCE = 10V, IC =
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 50mA*
1000
2500
Transition frequency
fT
VCB = 20V, IE = –20mA, f = 200MHz
55
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
0.4
V
MHz
15
*2
pF
Pulse measurement
1
Transistor
2SD1458
PC — Ta
IC — VCE
200
0.8
0.6
0.4
0.2
2.0
IB=100µA
90µA
80µA
70µA
160
120
60µA
50µA
40µA
80
30µA
20µA
40
25˚C
Ta=75˚C
–25˚C
1.2
0.8
0.4
0
80
120
160
200
0
0
2
4
6
8
10
VCE(sat) — IC
30
1500
1
Ta=75˚C
–25˚C
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
IE=0
f=1MHz
Ta=25˚C
20
16
12
8
4
0
1
3
10
25˚C
–25˚C
30
500
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
Cob — VCB
24
100
Collector to base voltage VCB (V)
2.0
VCB=10V
Ta=25˚C
1000
25˚C
1.6
300
Ta=75˚C
2000
3
1.2
VCE=10V
2500
10
0.8
fT — I E
3000
Forward current transfer ratio hFE
IC/IB=10
0.1
0.4
Base to emitter voltage VBE (V)
hFE — IC
100
0.3
0
Collector to emitter voltage VCE (V)
Transition frequency fT (MHz)
40
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
1.6
10µA
0
Collector output capacitance Cob (pF)
VCE=10V
Collector current IC (A)
1.0
2.4
Ta=25˚C
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
IC — VBE
240
Collector current IC (mA)
Collector power dissipation PC (W)
1.2
10
250
200
150
100
50
0
–1
–3
–10
–30
–100 –300 –1000
Emitter current IE (mA)
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2001 MAR