Transistor 2SD2598 Silicon NPN epitaxial planer type darlington Unit: mm 1.05 2.5±0.1 ±0.05 4.0 0.8 ■ Absolute Maximum Ratings * Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 750 mA Collector current IC Collector power dissipation PC*1 Junction temperature Tj Storage temperature Tstg 500 mA 1 W 150 ˚C –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter 14.5±0.5 2.5±0.5 1 2.5±0.5 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (Ta=25˚C) Parameter +0.1 0.45–0.05 2.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. +0.1 ● 0.65 max. 0.45–0.05 ● 1.0 1.0 0.2 For low-frequency amplification ■ Features 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) Internal Connection C or more, and the board B E (Ta=25˚C) Symbol (1.45) 0.5 4.5±0.1 0.15 6.9±0.1 0.7 max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA Collector to base voltage VCBO IC = 100µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V *1 Conditions typ Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3.0 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *1h VCE = 10V, IC = 500mA*2 min 4000 20000 200 MHz *2 FE Rank classification Rank hFE Q Pulse measurement R 4000 ~ 10000 8000 ~ 20000 1 2SD2598 Transistor IC — VCE 1.2 0.8 0.4 Ta=25˚C IB=150µA 125µA 100µA 750 Collector current IC (mA) 600 50µA 450 300 150 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 30 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 8 10 12 IC/IB=1000 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 3 Collector current IC (A) 10 9.0 Ta=75˚C 25˚C –25˚C 103 102 10 1 0.01 0.03 1 3 10 Cob — VCB VCE=10V 104 0.3 Collector current IC (mA) hFE — IC IC/IB=1000 1 6 105 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 100 4 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 2 75µA Collector output capacitance Cob (pF) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.6 3 VCE(sat) — IC 900 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 f=1MHz IE=0 Ta=25˚C 7.5 6.0 4.5 3..0 1.5 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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