DSEP 2x 31-06A DSEP 2x 31-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V = 30/35 ns trr with soft recovery VRSM VRRM V V 600 600 600 600 Symbol IFRMS IFAVM miniBLOC, SOT-227 B Type DSEP 2x 31-06A DSEP 2x 31-06B Conditions Maximum Ratings 70 30 rect., d = 0.5; TC (Vers. A) = 95°C TC (Vers. B) = 85°C A A Features IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A EAS TVJ = 25°C; non-repetitive IAS = 1 A; L = 180 µH 0.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -40...+150 150 -40...+150 °C °C °C 100 W 2500 V~ TVJ TVJM Tstg l l l l l l l l Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md mounting torque (M4) terminal connection torque (M4) Weight typical l Applications 1.1-1.5/9-13 1.1-1.5/9-13 30 Nm/lb.in. Nm/lb.in. g l l l l Symbol IR ¬ VF Conditions Characteristic max. Values Vers. A Vers. B TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 0.25 1 0.25 2 mA mA IF = 30 A; 1.30 1.58 1.73 2.49 V V 1.15 typ. 0.1 1.15 typ. 0.1 K/W K/W typ. 35 typ. 30 ns TVJ = 125°C TVJ = 25°C RthJC RthCH trr IRM IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour l l l l Advantages l l typ. 6 Pulse test: ¬ Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 µs, Duty Cycle < 2.0 % typ. 4 A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders l Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages D4 - 85-86 IXYS reserves the right to change limits, test conditions and dimensions. D 4 - 72 914 Data according to IEC 60747 and per diode unless otherwise specified © 2000 IXYS All rights reserved DSEP 2x 31-06A 70 A 60 3000 50 T = 100°C nC VVJ = 300V R 2500 T = 100°C A VVJ= 300V R IRM Qr IF 50 TVJ=150°C 2000 TVJ=100°C 1500 IF= 60A IF= 30A IF= 15A 40 30 40 IF= 60A IF= 30A IF= 15A 30 20 1000 20 TVJ=25°C 0 0.0 0.5 1.0 1.5 VF 10 500 10 0 100 V2.0 Fig. 1 Forward current IF versus VF A/s 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 130 120 400 s 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 µs VFR tfr 0.9 IF= 60A IF= 30A IF= 15A 110 1.0 200 V VFR tfr 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 1.5 0 100 10 0.6 5 0.3 IRM 90 0.5 Qr 80 0.0 TVJ= 100°C IF = 30A 70 0 40 80 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 800 A/ s 1000 600 0 0 200 400 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 10 0.0 s 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 4 ZthJC 0.1 Rthi (K/W) ti (s) 0.436 0.482 0.117 0.115 0.0055 0.0092 0.0007 0.0418 0.01 0.001 0.0001 DSEP 2x31-06A 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 914 Fig. 7 Transient thermal resistance junction to case D4 - 73 DSEP 2x 31-06B 60 A TVJ= 100°C nC VR = 300V 50 IF 30 1000 25 800 Qr IF= 60A IF= 30A IF= 15A 40 600 TVJ=150°C TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A IRM 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V A/s 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 2.0 Kf 200 400 s 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 µs tfr 0.75 VFR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ s 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.00 s 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 4 ZthJC 0.1 Rthi (K/W) ti (s) 0.436 0.482 0.117 0.115 0.0055 0.0092 0.0007 0.0418 0.01 0.001 0.0001 0.00001 DSEP 2x31-06B 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values D 4 - 74 906 Fig. 7 Transient thermal resistance junction to case © 2000 IXYS All rights reserved