ETC DSEP2X31-06A

DSEP 2x 31-06A
DSEP 2x 31-06B
HiPerFREDTM Epitaxial Diode
IFAV = 2x 30 A
VRRM = 600 V
= 30/35 ns
trr
with soft recovery
VRSM
VRRM
V
V
600
600
600
600
Symbol
IFRMS
IFAVM
miniBLOC, SOT-227 B
Type
DSEP 2x 31-06A
DSEP 2x 31-06B
Conditions
Maximum Ratings
70
30
rect., d = 0.5; TC (Vers. A) = 95°C
TC (Vers. B) = 85°C
A
A
Features
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
250
A
EAS
TVJ = 25°C; non-repetitive
IAS = 1 A; L = 180 µH
0.2
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-40...+150
150
-40...+150
°C
°C
°C
100
W
2500
V~
TVJ
TVJM
Tstg
l
l
l
l
l
l
l
l
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight
typical
l
Applications
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
l
l
l
l
Symbol
IR
¬
VF ­
Conditions
Characteristic max. Values
Vers. A Vers. B
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
0.25
1
0.25
2
mA
mA
IF = 30 A;
1.30
1.58
1.73
2.49
V
V
1.15
typ. 0.1
1.15
typ. 0.1
K/W
K/W
typ. 35
typ. 30
ns
TVJ = 125°C
TVJ = 25°C
RthJC
RthCH
trr
IRM
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
l
l
l
l
Advantages
l
l
typ. 6
Pulse test: ¬ Pulse Width = 5 ms, Duty Cycle < 2.0 %
­ Pulse Width = 300 µs, Duty Cycle < 2.0 %
typ. 4
A
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
l
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
IXYS reserves the right to change limits, test conditions and dimensions.
D 4 - 72
914
Data according to IEC 60747 and per diode unless otherwise specified
© 2000 IXYS All rights reserved
DSEP 2x 31-06A
70
A
60
3000
50
T = 100°C
nC VVJ = 300V
R
2500
T = 100°C
A VVJ= 300V
R
IRM
Qr
IF 50
TVJ=150°C
2000
TVJ=100°C
1500
IF= 60A
IF= 30A
IF= 15A
40
30
40
IF= 60A
IF= 30A
IF= 15A
30
20
1000
20
TVJ=25°C
0
0.0
0.5
1.0
1.5
VF
10
500
10
0
100
V2.0
Fig. 1 Forward current IF versus VF
A/s 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
130
120
400
s 1000
600 A/
800
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.2
µs
VFR
tfr
0.9
IF= 60A
IF= 30A
IF= 15A
110
1.0
200
V
VFR
tfr
15
trr
Kf
0
20
TVJ= 100°C
VR = 300V
ns
1.5
0
100
10
0.6
5
0.3
IRM
90
0.5
Qr
80
0.0
TVJ= 100°C
IF = 30A
70
0
40
80
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
800
A/
s 1000
600
0
0
200
400
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
10
0.0
s 1000
600 A/
800
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
4
ZthJC
0.1
Rthi (K/W)
ti (s)
0.436
0.482
0.117
0.115
0.0055
0.0092
0.0007
0.0418
0.01
0.001
0.0001
DSEP 2x31-06A
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
914
Fig. 7 Transient thermal resistance junction to case
D4 - 73
DSEP 2x 31-06B
60
A
TVJ= 100°C
nC VR = 300V
50
IF
30
1000
25
800
Qr
IF= 60A
IF= 30A
IF= 15A
40
600
TVJ=150°C
TVJ= 100°C
VR = 300V
A
IF= 60A
IF= 30A
IF= 15A
IRM
20
30
15
TVJ=100°C
400
20
10
TVJ=25°C
200
10
0
0
1
2
5
0
100
3 V
A/s 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
90
2.0
Kf
200
400
s 1000
600 A/
800
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.00
TVJ= 100°C
IF = 30A
V
VFR
15
trr
1.5
0
20
TVJ= 100°C
VR = 300V
ns
0
µs
tfr
0.75
VFR
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
10
0.50
5
0.25
70
0.5
Qr
0.0
60
0
40
80
120 °C 160
0
TVJ
200
400
800
A/
s 1000
600
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
10
0.00
s 1000
600 A/
800
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
4
ZthJC
0.1
Rthi (K/W)
ti (s)
0.436
0.482
0.117
0.115
0.0055
0.0092
0.0007
0.0418
0.01
0.001
0.0001
0.00001
DSEP 2x31-06B
0.0001
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
D 4 - 74
906
Fig. 7 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved