IXYS DSEI30-12A

Fast Recovery
Epitaxial Diode (FRED)
DSEI 30
VRSM
A
V
1200
VRRM
Type
C
IFAVM = 26 A
VRRM = 1200 V
trr
= 40 ns
TO-247 AD
V
1200
C
DSEI 30-12A
A
C
A = Anode, C = Cathode
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM ①
IFRM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
70
26
375
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
185
195
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A 2s
A 2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
170
160
A 2s
A 2s
-40...+150
150
-40...+150
°C
°C
°C
138
W
Features
●
●
●
●
●
I 2t
TVJ
TVJM
Tstg
●
●
Applications
●
●
●
●
Ptot
TC = 25°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Weight
6
Nm/lb.in.
Nm/lb.in.
g
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meet UL 94V-0
●
●
●
●
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
750
250
7
µA
µA
mA
●
VF
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
2.2
2.55
V
V
●
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.65
18.2
V
mΩ
0.9
35
K/W
K/W
K/W
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Characteristic Values
typ.
max.
Advantages
RthJC
RthCK
RthJA
●
●
0.1
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C
40
60
ns
IRM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs
L ≤ 0.05 µH; TVJ = 100°C
16
18
A
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 1999 IXYS All rights reserved
D1 - 20
D1
DSEI 30, 1200 V
70
A
60
50
6
T =100°C
µC VVJ= 540V
R
5
50
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
40
30
3
TVJ=100°C
VR= 540V
40
max.
IF=30A
IF=60A
IF=30A
IF=15A
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
IF
A
30
20
2
20
typ.
max.
1
10
0
10
typ.
0
0
0
1
2
3
V
4
1
10
100 A/µs 1000
VF
0
Fig. 1 Forward current
versus voltage drop.
Fig. 3 Peak reverse current versus
-diF/dt.
1.0
TVJ=100°C
VR=540V
IRM
trr
0.8
0.6
1200
ns
V
1000
50
0.8
1.0
D1
60
µs
1.2
VFR
IF=30A
IF=60A
IF=30A
IF=15A
max.
0.6
40
800
30
600
20
400
VFR
tfr
0.4
QR
0.4
tfr
0.2
10
typ.
0.2
0.0
0.0
0
40
80
120 °C 160
200
400
A/µs 600
0
diF/dt
Fig. 5 Recovery time versus -diF/dt.
1.0
Dimensions
Fig. 6 Peak forward voltage
versus diF/dt.
Dim.
K/W
0.8
ZthJC
0.6
0.4
0.2
0.01
0.1
1
0
s
10
400 A/µs 600
200
-diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
200
TVJ=125°C
IF=30A
0
0
TJ
0.0
0.001
400 A/µs 600
-diF/dt
Fig. 2 Recovery charge versus -diF/dt.
1.4
Kf
200
-diF/dt
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
2.2
2.54
0.087
0.102
t
Fig. 7 Transient thermal impedance junction to case.
© 1999 IXYS All rights reserved
D1 - 21