DSEI 2x101 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 130 91 tbd A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 900 A -40...+150 150 -40...+150 °C °C °C 250 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 24 g TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Weight Symbol Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM VF IF = 100 A; TVJ = 150°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK 3.0 1.5 15 mA mA mA 1.61 1.87 V V 1.01 6.1 V mΩ 0.5 K/W K/W 0.05 trr IF = 1 A; -di/dt = 400 A/µs VR = 30 V; TVJ = 25°C 40 60 ns IRM VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs L ≤ 0.05 µH; TVJ = 100°C 24 30 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight IXYS reserves the right to change limits, test conditions and dimensions © 2001 IXYS All rights reserved 139 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 1-2 DSEI 2x 101-12P 125 IF 140 TVJ= 100°C A VR =600V 120 16 T = 100°C µC VVJ= 600V 14 R 150 A IRM Qr 12 100 100 10 IF=200A IF=100A IF= 50A TVJ=150°C 8 75 TVJ=100°C 80 6 50 TVJ= 25°C 40 4 25 20 2 0 0.0 0.5 IF=200A IF=100A IF= 50A 60 1.5 V VF 1.0 0 100 2.0 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 500 450 1.2 400 TVJ= 100°C IF = 100A 50 VFR 400 40 350 30 IF=200A IF=100A IF= 50A 300 µs tfr tfr IRM 1.5 1.0 1.0 0.8 D5 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt V trr Kf 200 60 TVJ= 100°C VR = 600V ns 0 VFR 20 0.5 Qr 0.6 10 250 0.4 0 200 0 40 80 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/µs 800 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 200 400 600 800 diF/dt 0.0 1000 A/µs Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Dimensions in mm (1mm = 0.0394“) D=0.7 ZthJC 0.5 0.3 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 DSEI 2x101-12 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles © 2001 IXYS All rights reserved 2-2