IXYS DSEP30-06B

DSEP 30-06A
DSEP 30-06BR DSEP 30-06B
HiPerFREDTM Epitaxial Diode
IFAV = 30 A
VRRM = 600 V
trr
= 30/35 ns
with soft recovery
VRSM
VRRM
V
V
600
600
600
600
600
600
Type
A
C
DSEP 30-06A
DSEP 30-06B
DSEP 30-06BR
TO-247 AD
ISOPLUS 247TM
Version A
Version BR
C
C
A
A
C (TAB)
Isolated
back surface
A = Anode, C = Cathode
Symbol
IFRMS
IFAVM
Conditions
Maximum Ratings
rect., d = 0.5; TC (Vers. A) = 135°C
TC (Vers. B) = 125°C; TC (Vers. BR) = 115°C
70
30
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
250
A
EAS
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
0.2
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
165
135
W
W
TVJ
TVJM
Tstg
Ptot
TC = 25°C
(Vers. BR)
Md*
FC
mounting torque
mounting force with clip
VISOL **
50/60 Hz, RMS, t = 1 minute, leads-to-tab
Weight
typical
0.8...1.2
20...120
Nm
N
2500
V~
6
g
* Verson A only; ** Version BR only
Symbol
①
Conditions
Characteristic max. Values
Vers. A Vers. B
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
250
1
250
2
µA
mA
VF ②
IF = 30 A;
1.25
1.60
1.56
2.51
V
V
RthJC
RthJC
RthCH
0.9
Version BR
typ.
0.25
0.9
1.1
0.25
K/W
K/W
K/W
35
30
ns
6
4
A
IR
trr
IRM
typ.
typ.
TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Features
•
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version ..R isolated and
UL registered E153432
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
417
Data according to IEC 60747 and per diode unless otherwise specified.
1-3
DSEP 30-06A
70
A
60
3000
50
T = 100°C
nC VVJ= 300V
R
2500
IRM
Qr
IF 50
TVJ=150°C
2000
TVJ=100°C
1500
IF= 60A
IF= 30A
IF= 15A
40
30
TVJ= 100°C
VR = 300V
A
40
IF= 60A
IF= 30A
IF= 15A
30
20
1000
20
TVJ=25°C
0
0.0
0.5
1.0
1.5
VF
10
500
10
0
100
V2.0
Fig. 1 Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
130
120
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.2
µs
VFR
tfr
0.9
IF= 60A
IF= 30A
IF= 15A
110
1.0
400
V
VFR
tfr
15
trr
Kf
200
20
TVJ= 100°C
VR = 300V
ns
1.5
0
100
10
0.6
5
0.3
IRM
90
0.5
Qr
80
0.0
TVJ= 100°C
IF = 30A
70
0
40
80
120 °C 160
0
0
TVJ
200
400
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
0.465
0.179
0.256
0.0052
0.0003
0.0396
0.01
0.001
0.00001
DSEP30-06A DSEC60-06A
0.0001
0.001
0.01
s
0.1
NOTE: Fig. 2 to Fig. 6 shows typical values
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
417
Fig. 7 Transient thermal resistance junction to case
2-3
DSEP 30-06BR DSEP 30-06B
100
300
A
nC
TVJ = 150°C
IF
A
VR = 300 V
250
80
12
TVJ = 100°C
Qr
IRM
IF = 60 A
200
IF = 30 A
IF = 15 A
8
IF = 30 A
60
IF = 60 A
10
IF = 15 A
TVJ = 100°C
150
6
100
4
40
TVJ = 100°C
VR = 300 V
20
50
TVJ = 25°C
0
0
1
3 V
2
2
0
100
4
0
A/µs 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
140
120
600 A/µs
800 1000
-diF/dt
0.30
µs
0.25
tfr
IF = 30 A
50
VFR
trr
Kf
400
TVJ = 100°C
V
VR = 300 V
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
60
TVJ = 100°C
ns
1.5
0
IF = 60 A
100
40
0.20
30
0.15
IF = 30 A
1.0
IF = 15 A
80
IRM
20
60
0.5
tfr
VFR
10
Qr
0.10
0.05
40
0.0
0
0
40
80
120 C 160
0
200
TVJ
400
600
800 1000
A/µs
0
200
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
10
0.00
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation ..B:
K/W
i
DSEP 30-06BR
1
1
2
3
DSEP 30-06B
ZthJC
0.1
Rthi (K/W)
ti (s)
0.465
0.179
0.256
0.0052
0.0003
0.0397
Constants for ZthJC calculation ..BR:
i
1
2
3
4
0.01
0.001
0.00001
400
0.0001
0.001
0.01
s
0.1
Rthi (K/W)
ti (s)
0.368
0.1417
0.0295
0.5604
0.0052
0.0003
0.0004
0.0092
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
NOTE: Fig. 2 to Fig. 6 shows typical values
417
Fig. 7 Transient thermal resistance junction to case
3-3