MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 ➀ ➁ ➂ ➁➃ ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ............................................................. 0.52Ω ● ID ......................................................................................... 10A ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➀ ➂ TO-220 APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID Drain-source voltage Gate-source voltage Drain current IDM IDA PD Tch Tstg Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Conditions VGS = 0V VDS = 0V L = 200µH Typical value Ratings Unit 250 ±20 10 V V A 30 10 55 –55 ~ +150 –55 ~ +150 A A W °C °C 2.0 g Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P ELECTRICAL CHARACTERISTICS HIGH-SPEED SWITCHING USE (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time VDS = 25V, VGS = 0V, f = 1MHz VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) Thermal resistance Test conditions Limits Unit VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V Min. 250 — — Typ. — — — Max. — ±10 1 ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V 2.0 — — — 3.0 0.40 2.00 9.0 4.0 0.52 2.60 — V Ω V S — — — — 950 90 25 20 — — — — pF pF pF ns — — — — 25 150 40 0.95 — — — — ns ns ns V — — 2.27 °C/W VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case V µA mA Sep.1998