NTE2967 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Type Package Applications: D Motor Control D Lamp Control D Solenoid Control D DC−DC Converter D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate−Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Avalanche Drain Current (Pulsed, L = 1005 H), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Source Current, IS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.835C/W Electrical Characteristics: (Tch = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Symbol Test Conditions V(BR)DSS VDS = 0V, ID = 1mA Min Typ Max Unit 100 − − V Gate−Source Leakage IGSS VGS = +20V, VDS = 0V − − +0.1 5A Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0 − − 0.1 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 35A − 14 20 m+ Drain−Source On−State Voltage VDS(on) VGS = 10V, ID = 35A − 0.49 0.70 V |yfs| VGS = 10V, ID = 35A − 53 − S Forward Transfer Admittance Rev. 10−13 Electrical Characteristics (Cont’d): (Tch = +255C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit − 6540 − pF Input Capacitance Ciss Output Capacitance Coss − 1150 − pF Reverse Transfer Capacitance Crss − 500 − pF Turn−On Delay Time td(on) − 95 − ns − 175 − ns td(off) − 330 − ns tf − 190 − ns IS = 35A, VGS = 0V − 1.0 1.5 V IS = 70A, dIF/dt = 100A/5 s − 120 − ns Rise Time tr Turn−Off Delay Time Fall Time Diode Forward Voltage VSD Reverse Recovery Time trr VGS = 0V, VDS = 10V, f = 1MHz Min VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50+ .190 (4.82) .787 (20.0) .615 (15.62) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)