VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES • Improved Ruggedness V(BR)DSS = 170V • 30:1 Load VSWR Capability at Specified Operating Conditions • 150W with 11dB Typical Gain @ 150MHz, 50V • Nitride Passivated • 150W with 18dB Typical Gain @ 30MHz, 50V • Refractory Gold Metallization • Excellent Stability & Low IMD • High Voltage Replacement for MRF150 • Common Source Configuration • RoHS Compliant • Available in Matched Pairs Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF150(MP) Unit 170 V Continuous Drain Current @ TC = 25°C 16 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 300 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 Max 3.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 1.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 μA gfs Forward Transconductance (VDS = 10V, ID = 5A) 4.5 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.60 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4936 Rev F 9-2010 Thermal Characteristics Dynamic Characteristics Symbol VRF150(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 420 Coss Output Capacitance VDS = 50V 210 Crss Reverse Transfer Capacitance f = 1MHz 35 Max Unit pF Functional Characteristics Symbol Parameter Min Typ GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 18 GPS f = 150MHz, VDD = 50V, IDQ = 250mA, Pout = 150W 11 ηD f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Max dB 50 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1VSWR - All Phase Angles % -32 1 Unit dBc -60 No Degradation in Output Power Class A Characteristics Symbol Test Conditions Min GPS Typ Max 20 IMD(d3) VDD = 50V, IDQ = 3A, Pout = 150WPEP, f1 = 30MHz, f2 = 30.001MHz -50 IMD(d9-d13) -75 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 35 35 14V 25 8V 20 7V 15 6V 10 5V 5 250μs PULSE TEST<0.5 % DUTY CYCLE 30 10V 9V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 TJ= -55°C 20 TJ= 25°C 15 TJ= 125°C 10 5 4V 0 0 V 0 4 8 12 16 20 24 28 32 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 100 10 ID, DRAIN CURRENT (V) C, CAPACITANCE (pF) Coss 10 Crss 1 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 20 Ciss 050-4936 Rev F 9-2010 Unit IDMax Pdmax Rds(on) 1 DC line TJ = 125°C TC = 75°C 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 1 1 10 100 250 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area dB Typical Performance Curves VRF150(MP) 0.6 D = 0.9 0.5 0.7 0.4 0.5 Note: PDM 0.3 0.3 0.2 0.1 t2 t 0.1 0.05 10-4 10-3 10-2 10 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration −20 1.0 300 Vdd=50V, Idq = 250mA, Freq=150MHz Vdd=50V, Idq = 250mA, Freq=150MHz −25 250 IM3 −30 −35 IM5 −40 −45 Vdd=50V 200 Vdd=40V 150 100 50 0 50 100 150 200 Pout, OUTPUT POWER (WATTS PEP) Figure 6. IMD versus POUT 250 0 0 5 10 15 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 20 050-4936 Rev F 9-2010 IMD, INTERMODULATION DISTORTION (dB) 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0 −50 t1 t1 = Pulse Duration OUTPUT POWER (WPEP) ZθJC, THERMAL IMPEDANCE (°C/W) 0.7 VRF150(MP) 30 MHz test Circuit L1 C6 Bias 0-12V + L2 C9 C8 C7 C10 T2 C5 + 50VD RF Output R1 DUT C4 R3 C3 C2 RF Input R2 C1 C1 -- 470 pF Dipped Mica C2, C5, C6 - C9 -- 0.1uF SMT C3 -- 200pF ATC 700C C4 -- 15pF, ATC 700C C10 -- 10uF, 100V Electrolytic L1 - VK200-4B L2 -- 2 Ferrite beads, 2.0 uH R1, R2 -- 51 7, 1 W Carbon R3 -- 3.3 7, 1 W Carbon T1 -- 9:1 Transformer T2 -- 1:9 Transformer 150 MHz test Circuit RFC1 + 50VDC + L4 Bias 0-12V 050-4936 Rev F 9-2010 C5 R3 C6 DUT L1 C2 R2 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25pF, Unelco C4 -- 0.1uF, Ceramic C5 -- 1.0 uF, 15 WV Tantalum C6 -- 250pF, Unelco J101 C7-- 25pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05uF, Ceramic C11 -- 15uF, 60WV Electrolytic C9 L3 L2 C1 C3 C11 + R1 C4 RF Input C10 C7 C8 RF Output VRF150(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. .5” SOE Package Outline All Dimensions are ± .005 A U DIM 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K H E C Seating Plane MILLIMETERS MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES MIN 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-4936 Rev F 9-2010 M