ETC UNR321N

Transistors with built-in Resistor
UNR321N
Silicon NPN epitaxial planer type
Unit : mm
For digital circuit
0.33+0.05
–0.02
5°
2
(0.40) (0.40)
0.80±0.05
1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
1.20±0.05
0.80±0.05
1
0.23+0.05
–0.02
0.15 min.
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• 10 000 pcs per 1 reel, reducing reel change frequency.
0.15 min.
3
■ Features
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1 : Base
2 : Emitter
3 : Collector
0.15 max.
Rating
0.52±0.03
5°
Symbol
0 to 0.01
Parameter
0.10+0.05
–0.02
SSSMini3-F1 Type Package
Marking Symbol: EX
Internal Connection
R1
(4.7kΩ)
C
B
R2
(47kΩ)
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ICBO
VCB = 50 V, IE = 0
0.1
µA
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
0.2
mA
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
50
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
VCE = 10 V, IC = 5 mA
80
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
hFE
VCE(sat)
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Low-level output voltage
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
R1
Resistance ratio
R1/R2
Transition frequency
fT
V
400
IC = 10 mA, IB = 0.3 mA
High-level output voltage
Input resistance
V
0.25
4.9
−30%
0.08
VCB = 10 V, IE = −2 mA, f = 200 MHz
V
V
0.2
V
4.7
+30%
kΩ
0.1
0.12
150
MHz
1
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2001 MAR