DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ • Low Noise : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ • Built-in the capacitor for RF noise immunity • High ESD voltage • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS • Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number μPD5747T6J-E4 μPD5747T6J-E4-A Package 3-pin thin-type lead- Marking 6X Supplying Form • Embossed tape 8 mm wide less minimold • Pin 3 (GND) face the perforation side of the tape (Pb-Free) • Qty 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5747T6J Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10776EJ01V0DS (1st edition) Date Published July 2009 NS Printed in Japan 2009 μPD5747T6J ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Input Voltage (IN-GND) Vin −0.5 to +0.5 V Input Current (IN-GND) Iin 0.5 mA Output Voltage (OUT-GND) Vout 0 to +5 V Output Current (OUT-GND) Iout 0.5 mA Channel Temperature Tch 130 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −65 to +150 °C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Supply Voltage Note Symbol MIN. TYP. MAX. Unit VDD 1.0 1.5 5.0 V Note RL = 2.2 kΩ ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Circuit Current Input Capacitance Voltage Gain Test Conditions MIN. TYP. MAX. Unit IDD VDD = 1.5 V, Vin = 0 V, RL = 2.2 kΩ 140 190 250 μA Cinput VDD = 1.5 V, RL = 2.2 kΩ, f = 1 MHz − 1.5 − pF 4.5 5.7 7.0 dB − 0.7 − dB − 0 − dB − −101 − dBV − 0.7 − % GV VDD = 1.5 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit Reduced Voltage Gain Characteristics ΔGVV VDD = 1.5 → 1.0 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit ΔGVf Frequency Characteristics VDD = 1.5 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz → 110 Hz, see Test Circuit Output Noise Voltage NV VDD = 1.5 V, Vin = 0 V, RL = 2.2 kΩ, Cin = 3 pF, A-Curve, see Test Circuit Total Harmonic Distortion THD VDD = 1.5 V, Vout = 50 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit TEST CIRCUIT (Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion) VDD IN Vin 2 3 pF OUT GND + 2.2 kΩ 33 μF Data Sheet PU10776EJ01V0DS Vout μPD5747T6J TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE VOLTAGE GAIN vs. SUPPLY VOLTAGE 10 500 400 Voltage Gain GV (dB) Circuit Current IDD (μA) RL = 2.2 kΩ 300 200 100 0 0 2 1 3 0 1 2 3 5 4 VOLTAGE GAIN vs. FREQUENCY TOTAL HARMONIC DISTORTION vs. OUTPUT VOLTAGE 10 8 6 4 VDD = 1.5 V Cin = 3 pF RL = 2.2 kΩ Vin = 10 mV 0 10 100 1 000 10 000 Total Harmonic Distortion THD (%) Voltage Gain GV (dB) Cin = 3 pF RL = 2.2 kΩ Vin = 10 mV f = 1 kHz 2 Supply Voltage VDD (V) 2 1 VDD = 1.5 V Cin = 3 pF RL = 2.2 kΩ f = 1 kHz 0.1 10 100 000 1 000 100 Frequency f (Hz) Output Voltage Vout (mV) VOLTAGE GAIN vs. INPUT CAPACITANCE OUTPUT NOISE VOLTAGE vs. INPUT CAPACITANCE –95 Output Noise Voltage NV (dBV) 10 Voltage Gain GV (dB) 4 Supply Voltage VDD (V) 10 8 6 4 VDD = 1.5 V RL = 2.2 kΩ Vin = 10 mV f = 1 kHz 2 0 6 0 5 4 8 1 2 3 4 5 6 VDD = 1.5 V RL = 2.2 kΩ Vin = 0 V –100 –105 1 Input Capacitance Cin (pF) 2 3 4 5 6 Input Capacitance Cin (pF) Remark The graphs indicate nominal characteristics. Data Sheet PU10776EJ01V0DS 3 μPD5747T6J PACKAGE DIMENSIONS (0.8) (Bottom View) (0.8) 3 0.30+0.1 –0.05 1 1.2±0.1 1.0±0.1 6X 1.2±0.05 0.15+0.1 –0.05 3-PIN THIN-TYPE LEAD-LESS MINIMOLD (UNIT: mm) 0.15+0.1 –0.05 2 MAX. 0.33 0.11+0.1 –0.05 (0.2) PIN CONNECTIONS 1. OUT 2. IN 3. GND Remark ( ) : Reference value 4 Data Sheet PU10776EJ01V0DS (0.2) μPD5747T6J RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10776EJ01V0DS 5 μPD5747T6J • The information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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