AD ADG1208YCPZ

Low Capacitance, 4-/8-Channel
±15 V/+12 V iCMOS™ Multiplexers
ADG1208/ADG1209
FEATURES
FUNCTIONAL BLOCK DIAGRAMS
ADG1208
ADG1209
S1
S1A
DA
S4A
D
S1B
DB
S8
S4B
1-OF-8
DECODER
APPLICATIONS
1-OF-4
DECODER
A0 A1 A2 EN
A0
Audio and video routing
Automatic test equipment
Data-acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
A1
05713-001
<1 pC charge injection over full signal range
1 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
Available in 16-lead TSSOP and 4 mm × 4 mm LFCSP_VQ
Typical power consumption < 0.03 μW
EN
Figure 1.
GENERAL DESCRIPTION
The ADG1208 and ADG1209 are monolithic, iCMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1208 switches one of eight
inputs to a common output as determined by the 3-bit binary
address lines A0, A1, and A2. The ADG1209 switches one of
four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched off. When on, each
channel conducts equally well in both directions and has an
input signal range that extends to the supplies.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required. Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery powered instruments.
1.0
MUX (SOURCE TO DRAIN)
0.9 TA = 25°C
0.7
0.6
VDD = +15V
VSS = –15V
0.5
0.4
0.3
VDD = +12V
VSS = 0V
0.2
0.1
0
–15
VDD = +5V
VSS = –5V
–10
–5
0
VS (V)
5
10
15
05713-051
CHARGE INJECTION (pC)
0.8
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
Figure 2. Source to Drain Charge Injection vs. Source Voltage
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2006 Analog Devices, Inc. All rights reserved.
ADG1208/ADG1209
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................7
Applications....................................................................................... 1
ESD Caution...................................................................................7
Functional Block Diagrams............................................................. 1
Pin Configurations and Function Descriptions ............................8
General Description ......................................................................... 1
Typical Performance Characteristics ........................................... 10
Revision History ............................................................................... 2
Terminology .................................................................................... 14
Specifications..................................................................................... 3
Test Circuits..................................................................................... 15
Dual Supply ................................................................................... 3
Outline Dimensions ....................................................................... 17
Single Supply ................................................................................. 5
Ordering Guide .......................................................................... 17
REVISION HISTORY
4/06—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
ADG1208/ADG1209
SPECIFICATIONS
DUAL SUPPLY
VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted. 1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On Resistance Match Between Channels,
∆RON
On Resistance Flatness, RFLAT (On)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
ADG1208
ADG1209
Channel On Leakage, ID, IS (On)
ADG1208
ADG1209
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25ºC
−40ºC to
+85ºC
−40ºC to
+125ºC
VSS to VDD
120
200
3.5
6
20
64
±0.02
±0.1
±0.02
±0.1
±0.1
±0.02
±0.2
±0.2
240
270
10
12
76
83
±0.6
±1
±0.6
±0.6
±1
±1
±0.6
±0.6
±1
±1
2.0
0.8
±0.005
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 2
Transition Time, tTRANSITION
2
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
VS = ±10 V, IS = −1 mA, see Figure 29
VDD = +13.5 V, VSS = −13.5 V
VS = ±10 V, IS = −1 mA
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
V min
V max
μA max
μA max
pF typ
Break-Before-Make Time Delay, tBBM
80
130
75
95
83
100
25
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
0.4
−85
−85
0.15
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
−3 dB Bandwidth
CS (Off )
550
1
1.5
6
7
3.5
4.5
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
tON (EN)
tOFF (EN)
165
185
105
115
125
140
10
CD (Off ) ADG1208
CD (Off ) ADG1209
Rev. 0 | Page 3 of 20
VS = −5 V, 0 V, +5 V, IS = −1 mA
VD = ±10 V, VS = −10 V, see Figure 30
VS = 1 V, 10 V; VD = 10 V, 1 V; see Figure 30
VS = VD = ±10 V, see Figure 31
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 32
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 34
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 34
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 10 V, see Figure 33
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 35
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38
RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz,
see Figure 39
RL = 50 Ω, CL = 5 pF, see Figure 37
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
ADG1208/ADG1209
Parameter
CD, CS (On) ADG1208
CD, CS (On) ADG1209
+25ºC
7
8
5
6
−40ºC to
+85ºC
−40ºC to
+125ºC
Unit
pF typ
pF max
pF typ
pF max
POWER REQUIREMENTS
IDD
0.002
1.0
IDD
220
320
ISS
0.002
ISS
0.002
1.0
VDD/VSS
1
2
1.0
±5/±16.5
Temperature range is as follows: Y version: –40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. 0 | Page 4 of 20
μA typ
μA max
μA typ
μA max
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
VDD = +16.5 V, VSS = −16.5 V
Digital inputs = 0 V or VDD
Digital inputs = 5 V
Digital inputs = 0 V or VDD
Digital inputs = 5 V
|VDD | = |VSS|
ADG1208/ADG1209
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. 1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On Resistance Match Between Channels,
∆RON
On Resistance Flatness, RFLAT (On)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
ADG1208
ADG1209
Channel On Leakage ID, IS (On)
ADG1208
ADG1209
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 2
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tBBM
+25ºC
−40ºC to
+85ºC
−40ºC to
+125ºC
0 to VDD
300
475
5
16
60
±0.02
±0.1
±0.02
±0.1
±0.1
±0.02
±0.2
±0.2
567
625
26
27
CD (Off ) ADG1208
CD (Off ) ADG1209
CD, CS (On) ADG1208
CD, CS (On) ADG1209
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
VS = 0 V to10 V, IS = −1 mA, see Figure 29
VDD = 10.8 V, VSS = 0 V
VS = 0 V to 10 V, IS = −1 mA
Ω max
Ω typ
VS = 3 V, 6 V, 9 V; IS = −1 mA
VDD = 13.2 V
VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30
±0.6
±1
±0.6
±0.6
±1
±1
±0.6
±0.6
±1
±1
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
2.0
0.8
V min
V max
±0.1
μA max
pF typ
VIN = VINL or VINH
ns typ
RL = 300 Ω, CL = 35 pF
VS = 8 V, see Figure 32
RL = 300 Ω, CL = 35 pF
VS = 8 V, see Figure 34
RL = 300 Ω, CL = 35 pF
VS = 8 V, see Figure 34
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 8 V, see Figure 33
VS = 6 V, RS = 0 Ω, CL = 1 nF, see Figure 35
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38
RL = 50 Ω, CL = 5 pF, see Figure 37
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30
VS = VD = 1 V or 10 V; see Figure 31
±0.001
3
100
170
90
110
105
130
45
210
235
140
160
155
175
ns typ
ns typ
20
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
CS (Off )
Unit
−0.2
−85
−85
450
1.2
1.8
7.5
9
4.5
5.5
9
10.5
6
7.5
Rev. 0 | Page 5 of 20
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
pF typ
pF max
pF typ
pF max
ADG1208/ADG1209
Parameter
POWER REQUIREMENTS
IDD
+25ºC
−40ºC to
+85ºC
−40ºC to
+125ºC
0.002
1.0
IDD
220
VDD
1
2
330
5/16.5
Temperature range is as follows: Y version: –40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. 0 | Page 6 of 20
Unit
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
VDD = 13.2 V
Digital inputs = 0 V or VDD
Digital inputs = 5 V
VSS = 0 V, GND = 0 V
ADG1208/ADG1209
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to VSS
VDD to GND
VSS to GND
Analog, Digital Inputs 1
Continuous Current, S or D
Peak Current, S or D (Pulsed at
1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (Y Version)
Storage Temperature
Junction Temperature
TSSOP, θJA, Thermal Impedance
LFCSP_VQ, θJA, Thermal Impedance
Reflow Soldering Peak
Temperature (Pb-Free)
1
Rating
35 V
−0.3 V to +25 V
+0.3 V to −25 V
VSS − 0.3 V to VDD + 0.3 V or
30 mA (whichever occurs first)
30 mA
100 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
–40°C to +125°C
–65°C to +150°C
150°C
112°C/W
30.4°C/W
260(+0/−5)°C
Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 7 of 20
ADG1208/ADG1209
13
VDD
S2 5
VSS 1
PIN 1
INDICATOR
S1 2
ADG1208
11 VDD
TOP VIEW
(Not to Scale)
10 S5
S5
S2 3
11
S6
S3 4
S4 7
10
S7
D 8
9
S8
S4 5
05713-002
12
S3 6
12 GND
9 S6
05713-004
GND
TOP VIEW
(Not to Scale)
S1 4
14 A1
ADG1208
3
13 A2
A2
14
VSS
S7 8
A1
S8 7
16
15
D 6
A0 1
EN 2
15 A0
16 EN
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
Figure 4. ADG1208 Pin Configuration (LFCSP_VQ),
Exposed Pad Tied to Substrate, VSS
Figure 3. ADG1208 Pin Configuration (TSSOP)
Table 4. ADG1208 Pin Function Descriptions
TSSOP
1
2
Pin Number
LFCSP_VQ
15
16
Mnemonic
A0
EN
3
1
VSS
4
5
6
7
8
9
10
11
12
13
14
15
16
2
3
4
5
6
7
8
9
10
11
12
13
14
S1
S2
S3
S4
D
S8
S7
S6
S5
VDD
GND
A2
A1
Description
Logic Control Input.
Active High Digital Input. When low, the device is disabled and all switches are off.
When high, Ax logic inputs determine on switches.
Most Negative Power Supply Potential. In single supply applications, it can be
connected to ground.
Source Terminal 1. Can be an input or an output.
Source Terminal 2. Can be an input or an output.
Source Terminal 3. Can be an input or an output.
Source Terminal 4. Can be an input or an output.
Drain Terminal. Can be an input or an output.
Source Terminal 8. Can be an input or an output.
Source Terminal 7. Can be an input or an output.
Source Terminal 6. Can be an input or an output.
Source Terminal 5. Can be an input or an output.
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Logic Control Input.
Logic Control Input.
Table 5. ADG1208 Truth Table
A2
X
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
EN
0
1
1
1
1
1
1
1
1
Rev. 0 | Page 8 of 20
ON SWITCH
NONE
1
2
3
4
5
6
7
8
12
S2B
S3A 6
11
S3B
S4A 7
10
S4B
DA 8
9
DB
PIN 1
INDICATOR
S1A 2
ADG1209
11 S1B
S2A 3
TOP VIEW
(Not to Scale)
10 S2B
S3A 4
S4A 5
S2A 5
VSS 1
Figure 5. ADG1209 Pin Configuration (TSSOP)
12 VDD
9 S3B
05713-005
S1B
14 A1
13
13 GND
VDD
TOP VIEW
(Not to Scale)
S1A 4
DB 7
ADG1209
3
S4B 8
GND
14
VSS
16 EN
A1
DA 6
16
15
05713-003
A0 1
EN 2
15 A0
ADG1208/ADG1209
Figure 6. ADG1209 Pin Configurations (LFCSP_VQ),
Exposed Pad Tied to Substrate, VSS
Table 6. ADG1209 Pin Function Descriptions
Pin Number
TSSOP
LFCSP_VQ
1
15
2
16
Mnemonic
A0
EN
3
1
VSS
4
5
6
7
8
9
10
11
12
13
14
15
16
2
3
4
5
6
7
8
9
10
11
12
13
14
S1A
S2A
S3A
S4A
DA
DB
S4B
S3B
S2B
S1B
VDD
GND
A1
Description
Logic Control Input.
Active High Digital Input. When low, the device is disabled and all switches are off.
When high, Ax logic inputs determine on switches.
Most Negative Power Supply Potential. In single supply applications, it can be
connected to ground.
Source Terminal 1A. Can be an input or an output.
Source Terminal 2A. Can be an input or an output.
Source Terminal 3A. Can be an input or an output.
Source Terminal 4A. Can be an input or an output.
Drain Terminal A. Can be an input or an output.
Drain Terminal B. Can be an input or an output.
Source Terminal 4B. Can be an input or an output.
Source Terminal 3B. Can be an input or an output.
Source Terminal 2B. Can be an input or an output.
Source Terminal 1B. Can be an input or an output.
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Logic Control Input.
Table 7. ADG1209 Truth Table
A1
X
0
0
1
1
A0
X
0
1
0
1
EN
0
1
1
1
1
ON SWITCH PAIR
NONE
1
2
3
4
Rev. 0 | Page 9 of 20
ADG1208/ADG1209
TYPICAL PERFORMANCE CHARACTERISTICS
200
250
TA = 25°C
180
VDD = +13.5V
VSS = –13.5V
200
TA = +125°C
140
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
160
VDD = +15V
VSS = –15V
VDD = +15V
VSS = –15V
120
VDD = +16.5V
VSS = –16.5V
100
80
60
40
TA = +85°C
150
TA = +25°C
100
TA = –40°C
50
–9 –6 –3
0
3
6
9
SOURCE OR DRAIN VOLTAGE (V)
12
15
18
0
–15
05713-030
0
–18 –15 –12
Figure 7. On Resistance as a Function of VD (VS) for Dual Supply
10
600
TA = 25°C
VDD = +4.5V
VSS = –4.5V
500
500
VDD = +5V
VSS = –5V
400
VDD = +5.5V
VSS = –5.5V
300
15
VDD = 12V
VSS = 0V
TA = +125°C
ON RESISTANCE (Ω)
200
TA = +85°C
400
TA = +25°C
300
TA = –40°C
200
–6
–4
–2
0
2
SOURCE OR DRAIN VOLTAGE (V)
4
6
0
05713-031
0
0
2
4
6
8
TEMPERATURE (°C)
10
12
Figure 8. On Resistance as a Function of VD (VS) for Dual Supply
Figure 11. On Resistance as a Function of VD (VS) for Different
Temperatures, Single Supply
450
400
TA = 25°C
400
VDD = 10.8V
VSS = 0V
350
LEAKAGE CURRENT (pA)
300
250
VDD = 13.2V
VSS = 0V
200
VDD = +15V
VSS = –15V
VBIAS = +10V/–10V
300
VDD = 12V
VSS = 0V
150
100
05713-034
100
100
ID, S (ON) + +
200
ID (OFF) + –
100
IS (OFF) + –
0
ID, S (ON) – –
–100
ID (OFF) – +
–200
IS (OFF) – +
–300
0
0
2
4
6
8
10
SOURCE OR DRAIN VOLTAGE (V)
12
14
05713-032
50
Figure 9. On Resistance as a Function of VD (VS) for Single Supply
Rev. 0 | Page 10 of 20
–400
0
10
20
30
40 50 60 70 80
TEMPERATURE (°C)
90
100 110 120
05713-057
ON RESISTANCE (Ω)
–5
0
5
TEMPERATURE (°C)
Figure 10. On Resistance as a Function of VD (VS) for Different
Temperatures, Dual Supply
600
ON RESISTANCE (Ω)
–10
05713-033
20
Figure 12. ADG1208 Leakage Currents as a Function of Temperature,
Dual Supply
ADG1208/ADG1209
150
6
VDD = 12V
VSS = 0V
VBIAS = 1V/10V
100
4
CHARGE INJECTION (pC)
ID, S (ON) + +
ID (OFF) + –
0
IS (OFF) – +
ID, S (ON) – –
–50
ID (OFF) – +
–100
2
0
VDD = +12V
VSS = 0V
VDD = +15V
VSS = –15V
–2
–4
0
10
20
30
40 50 60 70 80
TEMPERATURE (°C)
90
–6
–15
05713-058
–150
VDD = +5V
VSS = –5V
100 110 120
Figure 13. ADG1208 Leakage Currents as a Function of Temperature,
Single Supply
–10
0
VS (V)
5
10
15
Figure 16. Drain-to-Source Charge Injection vs. Source Voltage
350
200
IDD PER CHANNEL
TA = 25°C
180
300
160
VDD = +5V
VSS = –5V
250
VDD = +15V
VSS = –15V
TIME (ns)
140
IDD (µA)
–5
05713-041
LEAKAGE CURRENT (pA)
IS (OFF) + –
50
DEMUX (DRAIN TO SOURCE)
TA = 25°C
120
100
200
VDD = +12V
VSS = 0V
150
80
40
2
4
6
8
10
LOGIC, INX (V)
12
14
16
0
–40
0
20
40
60
TEMPERATURE (°C)
80
100
120
Figure 17. tON/tOFF Times vs. Temperature
Figure 14. IDD vs. Logic Level
0
1.0
MUX (SOURCE TO DRAIN)
0.9 TA = 25°C
–10
–20
OFF ISOLATION (dB)
0.8
0.7
0.6
VDD = +15V
VSS = –15V
0.5
0.4
0.3
0.1
0
VS (V)
–40
–50
–60
–70
–90
5
10
15
05713-040
–5
–30
–100
VDD = +5V
VSS = –5V
–10
VDD = +15V
VSS = –15V
TA = 25°C
–80
VDD = +12V
VSS = 0V
0.2
0
–15
–20
–110
10k
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 18. Off Isolation vs. Frequency
Figure 15. Source-to-Drain Charge Injection vs. Source Voltage
Rev. 0 | Page 11 of 20
1G
05713-049
0
05713-035
0
05713-052
50
VDD = +12V
VSS = 0V
20
CHARGE INJECTION (pC)
VDD = +15V
VSS = –15V
100
60
ADG1208/ADG1209
20
10
VDD = +15V
VSS = –15V
T
0
A = 25°C
LOAD = 10kΩ
TA = 25°C
1
THD + N (%)
CROSSTALK (dB)
–20
–40
ADJACENT CHANNELS
–60
VDD = +15V, VSS = –15V, VS = +5Vrms
0.1
NONADJACENT
CHANNELS
–80
VDD = +5V, VSS = –5V, VS = +3.5Vrms
100k
1M
10M
FREQUENCY (Hz)
100M
1G
0.01
10
05713-042
–120
10k
100
Figure 19. ADG1208 Crosstalk vs. Frequency
12
–20
100k
VDD = +15V
VSS = –15V
TA = 25°C
CAPACITANCE (pF)
10
–40
ADJACENT CHANNELS
–80
–100
8
SOURCE/DRAIN ON
6
DRAIN OFF
4
2
SOURCE OFF
100k
1M
10M
FREQUENCY (Hz)
100M
1G
0
–15
05713-053
–120
10k
Figure 20. ADG1209 Crosstalk vs. Frequency
–10
–5
0
VBIAS (V)
5
10
15
05713-043
NONADJACENT
CHANNELS
Figure 23. ADG1208 Capacitance vs. Source Voltage,
±15 V Dual Supply
12
–6.0
–6.5
VDD = 12V
VSS = 0V
TA = 25°C
10
SOURCE/DRAIN ON
CAPACITANCE (pF)
–7.0
–7.5
–8.0
–8.5
8
DRAIN OFF
6
4
–9.0
100k
1M
10M
FREQUENCY (Hz)
100M
1G
Figure 21. On Response vs. Frequency
0
0
2
4
6
VBIAS (V)
8
10
Figure 24. ADG1208 Capacitance vs. Source Voltage,
12 V Single Supply
Rev. 0 | Page 12 of 20
12
05713-045
–10.0
10k
SOURCE OFF
2
–9.5
05713-054
ON RESPONSE (dB)
CROSSTALK (dB)
10k
Figure 22. THD + N vs. Frequency
0
–60
1k
FREQUENCY (Hz)
05713-036
–100
ADG1208/ADG1209
12
8
VDD = 12V
VSS = 0V
TA = 25°C
7
SOURCE/DRAIN ON
DRAIN OFF
VDD = +5V
VSS = –5V
TA = 25°C
4
SOURCE/DRAIN ON
5
DRAIN OFF
4
3
2
2
1
SOURCE OFF
–4
–3
–2
–1
0
1
2
3
4
5
VBIAS (V)
Figure 25. ADG1208 Capacitance vs. Source Voltage, ±5 V Dual Supply
2
0
4
6
VBIAS (V)
12
10
Figure 27. ADG1209 Capacitance vs. Source Voltage, 12 V Single Supply
VDD = +15V
VSS = –15V
TA = 25°C
7
6
7
SOURCE/DRAIN ON
6
CAPACITANCE (pF)
SOURCE/DRAIN ON
5
4
DRAIN OFF
3
5
4
3
DRAIN OFF
VDD = +5V
VSS = –5V
TA = 25°C
2
2
SOURCE OFF
SOURCE OFF
1
–10
–5
0
VBIAS (V)
5
10
15
05713-046
1
0
–15
8
8
8
CAPACITANCE (pF)
0
05713-055
0
–5
SOURCE OFF
Figure 26. ADG1209 Capacitance vs. Source Voltage, ±15 V Dual Supply
Rev. 0 | Page 13 of 20
0
–5
–4
–3
–2
–1
0
1
VBIAS (V)
2
3
4
5
05713-056
6
CAPACITANCE (pF)
CAPACITANCE (pF)
6
8
05713-047
10
Figure 28. ADG1209 Capacitance vs. Source Voltage, ±5 V Dual Supply
ADG1208/ADG1209
TERMINOLOGY
RON
Ohmic resistance between D and S.
tTRANSITION
Delay time between the 50% and 90% points of the digital
inputs and the switch on condition when switching from one
address state to another.
ΔRON
Difference between the RON of any two channels.
IS (Off)
Source leakage current when the switch is off.
TBBM
Off time measured between the 80% point of both switches
when switching from one address state to another.
ID (Off)
Drain leakage current when the switch is off.
VINL
Maximum input voltage for Logic 0.
ID, IS (On)
Channel leakage current when the switch is on.
VINH
Minimum input voltage for Logic 1.
VD (VS)
Analog voltage on terminals D, S.
IINL (IINH)
Input current of the digital input.
CS (Off)
Channel input capacitance for off condition.
IDD
Positive supply current.
CD (Off)
Channel output capacitance for off condition.
ISS
Negative supply current.
CD, CS (On)
On switch capacitance.
Off Isolation
A measure of unwanted signal coupling through an off channel.
CIN
Digital input capacitance.
tON (EN)
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Delay time between the 50% and 90% points of the digital input
and switch on condition.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
tOFF (EN)
Delay time between the 50% and 90% points of the digital input
and switch off condition.
On Response
The frequency response of the on switch.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
Rev. 0 | Page 14 of 20
ADG1208/ADG1209
TEST CIRCUITS
S
D
S
D
A
VS
NC
VD
IDS
05713-037
VS
ID (ON)
ID (OFF)
S
D
A
VD
NC = NO CONNECT
Figure 30. Off Leakage
Figure 31. On Leakage
Figure 29. On Resistance
3V
ADDRESS
DRIVE (VIN)
50%
50%
tr < 20ns
tf < 20ns
VDD
VSS
VDD
VSS
A0
0V
VIN
S1
A1
50Ω
A2
tTRANSITION
VS1
S2–S7
tTRANSITION
VS8
S8
ADG12081
90%
2.4V
OUTPUT
OUTPUT
D
EN
300Ω
GND
35pF
1SIMILAR
05713-022
90%
CONNECTION FOR ADG1209.
Figure 32. Address to Output Switching Times, tTRANSITION
3V
ADDRESS
DRIVE (VIN)
VDD
VSS
VDD
VSS
A0
VIN
0V
S1
A1
50Ω
VS
S2–S7
A2
S8
80%
ADG12081
80%
OUTPUT
2.4V
OUTPUT
D
EN
300Ω
GND
35pF
1SIMILAR
05713-023
tBBM
CONNECTION FOR ADG1209.
Figure 33. Break-Before-Make Delay, tBBM
3V
50%
VDD
VSS
A0
50%
S1
A1
0V
ADG12081
tOFF (EN)
0.9VO
0.9VO
50Ω
1SIMILAR
Figure 34. Enable Delay, tON (EN), tOFF (EN)
Rev. 0 | Page 15 of 20
OUTPUT
D
EN
VIN
VS
S2–S8
A2
tON (EN)
OUTPUT
VSS
GND
300Ω
CONNECTION FOR ADG1209.
35pF
05713-024
ENABLE
DRIVE (VIN)
VDD
05713-039
A
05713-038
IS (OFF)
V
ADG1208/ADG1209
3V
VDD
VSS
VDD
VSS
A0
A1
VIN
A2
ADG12081
VOUT
RS
ΔVOUT
S
D
VOUT
EN
VS
QINJ = CL × ΔVOUT
CL
1nF
GND
1SIMILAR
05713-025
VIN
CONNECTION FOR ADG1209.
Figure 35. Charge Injection
VDD
VSS
VDD
NETWORK
ANALYZER
NETWORK
ANALYZER
VSS
S
VOUT
0.1µF
VDD
D
VS
S2
D
GND
VOUT
R
50Ω
VS
GND
OFF ISOLATION = 20 log
VOUT
05713-026
RL
50Ω
VSS
S1
RL
50Ω
50Ω
50Ω
VS
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
Figure 36. Off Isolation
VDD
VSS
0.1µF
0.1µF
VOUT
VS
05713-028
VDD
0.1µF
Figure 38. Channel-to-Channel Crosstalk
VSS
0.1µF
VDD
VDD
VSS
S
S
D
IN
VOUT
VS
V p-p
D
VIN
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
05713-027
INSERTION LOSS = 20 log
AUDIO PRECISION
VSS
RS
VS
GND
0.1µF
VDD
50Ω
RL
50Ω
VSS
0.1µF
NETWORK
ANALYZER
Figure 37. Bandwidth
GND
RL
10kΩ
Figure 39. THD + Noise
Rev. 0 | Page 16 of 20
VOUT
05713-029
0.1µF
ADG1208/ADG1209
OUTLINE DIMENSIONS
5.10
5.00
4.90
16
9
4.50
4.40
4.30
6.40
BSC
1
8
PIN 1
1.20
MAX
0.15
0.05
0.30
0.19
0.65
BSC
COPLANARITY
0.10
0.20
0.09
0.75
0.60
0.45
8°
0°
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153-AB
Figure 40. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
4.00
BSC SQ
PIN 1
INDICATOR
0.65 BSC
TOP
VIEW
13
12
PIN 1
INDICATOR
16
1
EXPOSED
PAD
3.75
BSC SQ
0.75
0.60
0.50
(BOTTOM VIEW)
9
4
8
2.25
2.10 SQ
1.95
5
0.25 MIN
1.95 BSC
0.80 MAX
0.65 TYP
12° MAX
1.00
0.85
0.80
0.60 MAX
0.60 MAX
0.05 MAX
0.02 NOM
0.30
0.23
0.18
SEATING
PLANE
0.20 REF
COPLANARITY
0.08
COMPLIANT TO JEDEC STANDARDS MO-220-VGGC
Figure 41. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-16-4)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADG1208YRUZ 1
ADG1208YRUZ-REEL71
ADG1208YCPZ-REEL1
ADG1208YCPZ-REEL71
ADG1209YRUZ1
ADG1209YRUZ-REEL71
ADG1209YCPZ-REEL1
ADG1209YCPZ-REEL71
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
Z = Pb-free part.
Rev. 0 | Page 17 of 20
Package Option
RU-16
RU-16
CP-16-4
CP-16-4
RU-16
RU-16
CP-16-4
CP-16-4
ADG1208/ADG1209
NOTES
Rev. 0 | Page 18 of 20
ADG1208/ADG1209
NOTES
Rev. 0 | Page 19 of 20
ADG1208/ADG1209
NOTES
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D05713-0-4/06(0)
Rev. 0 | Page 20 of 20