=
-----
EC
an AMP company
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=
RF MOSFET Power Transistor, 15W, 28V
100 - 500 MHz
UF28156
v2.00
Features
l
l
l
l
l
l
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower -Noise Floor
100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
Electrical Characteristics
L
3.66
4.32
n
.lO
35
344
.l70
JJ04 1
DO6
at 25°C
InputCapacitance
V,,=28.0 V, F=l .O MHz
Output Capacitance
Ccm
15
pF
Vos=28.0 V, F=l .OMHz
ReverseCapacitance
CRSS
7.2
pF
V,,=28.0 V. F=l .OMHz
Power Gain
GP
10
-
dB
V,,=28.0 V, 1,,=150.0 mA, P,,$5.0
W, F&O0 MHz
Drain Efficiency
‘7D
50
-
%
V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0
W, F=500 MHz
VSWR-T
-
2O:l
-
V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0
W. F=500 MHz
Load Mismatch Tolerance
Specifications
Subject to Change Without Notice.
M/A-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
UF2815B
15W, 28V
v2.00
Typical Broadband Performance
CAPACITANCES
Curves
POWER OUTPUT
vs VOLTAGE
16
,
10
.
5
t
vs VOLTAGE
P,,=l .O W IDO= 50 mA F&O0
F=l .O MHz
MHz
I
a-
2r
5
10
20
15
2.5
30
",, (")
EFFICIENCY
GAIN vs FREQUENCY
v,,r28
V P,,=15
vs FREQUENCY
VDD=28 V I,,=150
W lDQ=lOO mA
mA PO,,=15 W
70
“I
I
50
0
loo
200
300
400
loo
500
400
300
200
500
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
Vo,=28 V IDo= 50 mA
I
0.08
0.1
0.25
POWER INPUT(W)
Specifications Subject to Change Without Notice.
M/A-COM,
Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595
Fax -1-44(1344) 300 020
RF MOSFET Power Transistor,
UF2815B
15W, 28V
v2.ocl
Typical Device Impedance
Z,, (OHMS)
Z LOAD
(OHMS)
100
6.4 - j 25.0
22.0
300
6.5 - j 12.0
15.0 + j 14.0
500
1.7-j
Frequency
(MHz)
V,,=28
Z,, is the series equivalent
z, OADis the pptimum
input impedance
series equivalent
V,
10.5
+ j 16.0
8.0 + j 10.5
I,,=150
mA,
P,,,=15.0
Watts
of the device from gate to source.
load impedance
as measured from drain to ground.
RF Test Fixture
PARTS
c7
c4
C6
c5. 8
c3
c2
c9
Cl
ClL
12
13, 15
Cl0
Cl4
Rl
(11
LL 3
L2
L4
L5
L6
L7
LIST
2.0 pf
3npF
3.6pf
5&f
9.lpf
13pf
270pf
82Opf
.OlSuf
muf
5ouf 5ovo
10K OHM
lx28158
9 TURNS DF NO. 22 AWG
20 TURNS OF No. 22 AWG
.55’ OF JO OHM TRANSMISSION LINE
.25’ OF 50 OHM TRANSMISSION LINE
l.20’ OF 50 DHM TRANSMSSIDN LINE
JO OF 50 OHM TRANSMISSION LINE
Specifications Subject to Change Without Notice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020