ETC FMM5522GJ

FMM5522GJ
VSAT MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 35.0dBm(Typ.)
High Gain: G1dB = 26.0dB(Typ.)
Low In/Out VSWR
Broad Band: 14.0 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package (12 X 15 X 3.5mm)
DESCRIPTION
The FMM5522GJ is a module that contains a two-stage amplifier,
internally matched, for standard communications in the 14.0 to 14.5GHz
frequency range. This product is well suited for VSAT applications as it
offers high power, high gain, and low VSWR.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Parameter
Symbol
Rating
Unit
DC Input Voltage
VDD
12
V
DC Input Voltage
VGG
-7
V
Input Power
Pin
12
dBm
Storage Temperature
Tstg
-55 to +125
°C
Operating Case Temperature
Top
-55 to +85
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 10 volts.
2. The gate operating voltage (VGG) should not exceed -5 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc = 25°C)
Item
Frequency Range
P1dB
Power Gain at 1dB G.C.P.
G1dB
∆G
Input VSWR
VSWRi
Output VSWR
VSWRo
DC Input Current
IDD
DC Input Current
IGG
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Limit
Typ. Max.
VDD = 10V
VGG = -5V
f = 14.0 ~ 14.5GHz
VDD = 10V
VGG = -5V
Unit
GHz
14.0 - 14.5
CASE STYLE: GJ
Edition 1.5
October 1999
Min.
f
Output Power at 1dB G.C.P.
Gain Flatness
Condition
Symbol
33.5
35.0
-
dBm
23.0
26.0
-
dB
-
-
±1.0
dB
-
2:1
2.5:1
-
-
3:1
3.5:1
-
-
1.75
2.0
A
-
22
25
mA
G.C.P.: Gain Compression Point
1
FMM5522GJ
VSAT MMIC
OUTPUT POWER vs. FREQUENCY
37
OUTPUT POWER vs. INPUT POWER
VDS = 10V
P1dB
36
VDS=10V
f = 14.25 GHz
Pin=7dBm
5dBm
34
3dBm
33
1dBm
31
29
32
30
28
30
26
20
24
10
-3dBm
27
14
14.1
14.2
14.3
14.4
14.5
Frequency (GHz)
-2
0
2
4
Input Power (dBm)
RECOMMENDED BIAS CIRCUIT
1000pF
1000pF
50Ω
50Ω
4
5
RFout
6
3
2
RFin
1
VGC
VDD
50Ω
VGC
VDD
50Ω
1000pF
1000pF
Note: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
2
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6
ηadd (%)
Output Power (dBm)
Output Power (dBm)
35
FMM5522GJ
VSAT MMIC
S11
S22
+j50
S21
S12
+90°
+j100
14.2
14.1
+j25
14.0
14.4
+j250
+j10
0
14.6
14.7
14.2
14.4
14.4
10
14.2
14.0
25
14.7
13.9
14.7
180°
250
13.8GHz
40
30
13.8GHz
-j250
-j100
13.8GHz
S11
14.0
14.5
.004
14.6
.006
14.7
.008
-90°
-j50
FREQUENCY
(MHZ)
14.4
10
SCALE FOR |S12|
14.0
-j25
14.2
20
SCALE FOR |S21|
13.8GHz
-j10
14.3
14.6
S-PARAMETERS
VDD = 10V, VGG = -5V, IDD = 1.75A
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
1380
.218
-13.6
25.676
176.9
.002
1390
.172
-8.9
29.545
152.0
1400
.146
10.6
33.590
1410
.182
33.0
1420
.254
1430
S22
MAG
ANG
-142.5
.403
-115.3
.002
-98.4
.388
-127.7
125.9
.003
-55.0
.374
-143.0
37.615
96.6
.003
-14.8
.354
-163.7
35.4
40.633
65.4
.003
16.0
.337
172.4
.308
28.8
41.773
33.7
.004
42.8
.324
145.7
1440
.319
21.3
40.228
1.7
.005
68.1
.330
119.2
1450
.308
14.9
37.335
-28.2
.005
95.4
.323
95.0
1460
.275
13.1
33.493
-55.5
.004
120.5
.334
73.8
1470
.255
15.8
30.021
-82.2
.004
146.7
.326
55.3
3
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0°
FMM5522GJ
VSAT MMIC
Case Style "GJ"
Metal-Ceramic Hermetic Package
3.5 Max.
(0.137)
4-R 1.2±0.15
(0.047)
0.3
(0.012)
1.3±0.15
(0.051)
3.8
(0.149)
11±0.15
(0.433)
7
(0.276)
15
(0.591)
3
4
2
5
1
6
6-0.08
(0.003)
7
INDEX
1 Min.
(0.039)
6±0.15
(0.236)
0.9
(0.035)
12±0.15
(0.472)
1. V
DD
2. RFin
3. V
GG
4. V
GG
5. RF
out
6. V
DD
7. GND (Body)
Unit: mm (inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0)1628 504800
FAX: +44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0599M200
4
This Material Copyrighted by Its Respective Manufacturer