EUDYNA FMM5815GJ-1

FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
High Output Power: P1dB = 31dBm (Typ.)
High Gain: G1dB = 20dB (Typ.)
High PAE: ηadd = 25% (Typ.)
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5815GJ is a packaged, high-gain, high linearity,
amplifier designed for operation in the17.7-19.7GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited for
point-to-point communication applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDD
10
V
Gate-Source Voltage
VGG
-7.0
V
Input Power
Pin
22
dBm
Storage Temperature
Tstg
-55 to +125
°C
Operating Case Temperature
Top
-40 to +85
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Conditions
Symbol
Min.
Limits
Typ. Max.
Unit
f
17.7
-
19.7
GHz
Output Power at 1 dB G.C.P.
P1dB
29
31
-
dBm
Power Gain at 1 dB G.C.P.
G1dB
18
20
23
dB
Drain Current at 1 dB G.C.P.
Iddrf
-
800
950
mA
Gate Current at 1 dB G.C.P.
Iggrf
-
-12
-15
mA
Power-Added Efficiency at 1 dB G.C.P.
ηadd
-
25
-
%
Input Return Loss
RLin
-
-10
-
dB
RLout
-
-6
-
dB
-30
-35
-
dBc
Frequency Range
Output Return Loss
3rd Order Intermodulation
Distortion
IM3
VDD = 6V
VGG = -5V
f = 17.7 ~ 19.7GHz
IDD = 600mA (Typ.)
ZS = ZL = 50Ω
∆f = 10MHz, 2-Tone Test,
Pout = 20dBm S.C.L.
CASE STYLE: GJ
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
April 2002
1
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
P1dB, G1dB vs. VDD
OUTPUT POWER vs. FREQUENCY
VDD = 6V
VGG = -5V
34
VDD = 6V, VGG = -5V
17.7GHz P1dB
18.7GHz P1dB
19.7GHz P1dB
34
28
8dBm
26
6dBm
24
4dBm
22
2dBm
20
0dBm
18
-2dBm
P1dB (dBm), G1dB (dB)
P1dB
30
32
P1dB
30
28
26
24
G1dB
22
20
18
16
17.5
18.0
18.5
19.0
19.5
20.0
4
Frequency (GHz)
5
6
VDD (V)
OUTPUT POWER & ηadd vs. INPUT POWER
IM3, IM5 vs. OUTPUT POWER
34
-20 V
DD = 6V
Pout
35
30
26
25
ηadd
24
20
22
15
20
10
18
5
16
-2
0
2
4
6
8
10 12
14
IM3 (dBc), IM5 (dBc)
VDD = 6V
32 VGG = -5V
17.7GHz Pout
18.7GHz Pout
30
19.7GHz Pout
17.7GHz ηadd
28
18.7GHz ηadd
19.7GHz ηadd
ηadd (%)
Output Power (dBm)
Output power (dBm)
32
17.7GHz G1dB
18.7GHz G1dB
19.7GHz G1dB
VGG = -5V
∆f = 10MHz
-30
17.7GHz IM3
18.7GHz IM3
19.7GHz IM3
17.7GHz IM5
-40
18.7GHz IM5
19.7GHz IM5
IM3
IM5
-50
-60
15
0
17
19
21
23
25
Total Output Power (dBm)
Input Power (dBm)
2
27
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
FREQUENCY
(MHZ)
17200
17500
17700
17900
18000
18200
18400
18600
18800
19000
19200
19400
19500
19700
20000
20200
S11
MAG
.081
.180
.245
.302
.325
.362
.385
.399
.401
.398
.389
.389
.393
.426
.472
.475
ANG
19.3
-51.5
-81.8
-109.7
-123.5
-150.8
-179.4
150.9
117.4
80.6
39.8
-2.2
-23.0
-62.2
-117.1
-150.8
S-PARAMETERS
VDD = 6V, VGG = -5V
S21
S12
MAG
ANG
MAG
ANG
MAG
11.021
11.546
11.715
11.777
11.800
11.806
11.909
12.029
12.277
12.279
11.980
11.273
10.899
10.202
9.167
8.445
.287
.319
.340
.362
.369
.392
.408
.418
.415
.398
.366
.331
.315
.293
.315
.315
-38.3
-94.5
-132.5
-170.0
171.3
134.1
97.1
59.7
21.3
-18.5
-59.5
-99.4
-119.4
-157.6
145.1
107.3
.003
.004
.004
.004
.004
.004
.004
.004
.005
.005
.005
.005
.005
.004
.002
.001
-44.6
-83.3
-105.2
-135.1
-143.3
-176.7
160.5
133.8
108.7
81.8
53.1
22.3
-1.8
-40.2
-94.2
-143.2
S22
ANG
-63.7
-105.9
-135.6
-165.2
-179.8
152.9
127.2
103.2
80.2
59.4
41.2
26.5
21.7
14.7
0.5
-13.6
Download S-Parameters, click here
RECOMMENDED BIAS CIRCUIT
1000pF
1000pF
50Ω
50Ω
4
5
RFout
6
3
2
RFin
1
VGG
VDD
50Ω
VGG
VDD
50Ω
1000pF
1000pF
Note 1: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output:
The two pins named VDD are internally connected. The same is true for VGG.
3
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
Case Style "GJ"
Metal-Ceramic Hermetic Package
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
3
4
2
5
1
6
1.3±0.15
(0.051)
7
(0.276)
3.8
(0.149)
7
(0.276)
11±0.15
(0.433)
15
(0.591)
6-0.3
(0.012)
7
INDEX
1Min.
(0.039)
0.9
(0.035)
6±0.15
(0.236)
12±0.15
(0.472)
1.
2.
3.
4.
5.
6.
7.
VDD
RFin
VGG
VGG
RFout
VDD
GND (Body)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0402M200
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