FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm (Typ.) High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity, amplifier designed for operation in the17.7-19.7GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDD 10 V Gate-Source Voltage VGG -7.0 V Input Power Pin 22 dBm Storage Temperature Tstg -55 to +125 °C Operating Case Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Conditions Symbol Min. Limits Typ. Max. Unit f 17.7 - 19.7 GHz Output Power at 1 dB G.C.P. P1dB 29 31 - dBm Power Gain at 1 dB G.C.P. G1dB 18 20 23 dB Drain Current at 1 dB G.C.P. Iddrf - 800 950 mA Gate Current at 1 dB G.C.P. Iggrf - -12 -15 mA Power-Added Efficiency at 1 dB G.C.P. ηadd - 25 - % Input Return Loss RLin - -10 - dB RLout - -6 - dB -30 -35 - dBc Frequency Range Output Return Loss 3rd Order Intermodulation Distortion IM3 VDD = 6V VGG = -5V f = 17.7 ~ 19.7GHz IDD = 600mA (Typ.) ZS = ZL = 50Ω ∆f = 10MHz, 2-Tone Test, Pout = 20dBm S.C.L. CASE STYLE: GJ G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 April 2002 1 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC P1dB, G1dB vs. VDD OUTPUT POWER vs. FREQUENCY VDD = 6V VGG = -5V 34 VDD = 6V, VGG = -5V 17.7GHz P1dB 18.7GHz P1dB 19.7GHz P1dB 34 28 8dBm 26 6dBm 24 4dBm 22 2dBm 20 0dBm 18 -2dBm P1dB (dBm), G1dB (dB) P1dB 30 32 P1dB 30 28 26 24 G1dB 22 20 18 16 17.5 18.0 18.5 19.0 19.5 20.0 4 Frequency (GHz) 5 6 VDD (V) OUTPUT POWER & ηadd vs. INPUT POWER IM3, IM5 vs. OUTPUT POWER 34 -20 V DD = 6V Pout 35 30 26 25 ηadd 24 20 22 15 20 10 18 5 16 -2 0 2 4 6 8 10 12 14 IM3 (dBc), IM5 (dBc) VDD = 6V 32 VGG = -5V 17.7GHz Pout 18.7GHz Pout 30 19.7GHz Pout 17.7GHz ηadd 28 18.7GHz ηadd 19.7GHz ηadd ηadd (%) Output Power (dBm) Output power (dBm) 32 17.7GHz G1dB 18.7GHz G1dB 19.7GHz G1dB VGG = -5V ∆f = 10MHz -30 17.7GHz IM3 18.7GHz IM3 19.7GHz IM3 17.7GHz IM5 -40 18.7GHz IM5 19.7GHz IM5 IM3 IM5 -50 -60 15 0 17 19 21 23 25 Total Output Power (dBm) Input Power (dBm) 2 27 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FREQUENCY (MHZ) 17200 17500 17700 17900 18000 18200 18400 18600 18800 19000 19200 19400 19500 19700 20000 20200 S11 MAG .081 .180 .245 .302 .325 .362 .385 .399 .401 .398 .389 .389 .393 .426 .472 .475 ANG 19.3 -51.5 -81.8 -109.7 -123.5 -150.8 -179.4 150.9 117.4 80.6 39.8 -2.2 -23.0 -62.2 -117.1 -150.8 S-PARAMETERS VDD = 6V, VGG = -5V S21 S12 MAG ANG MAG ANG MAG 11.021 11.546 11.715 11.777 11.800 11.806 11.909 12.029 12.277 12.279 11.980 11.273 10.899 10.202 9.167 8.445 .287 .319 .340 .362 .369 .392 .408 .418 .415 .398 .366 .331 .315 .293 .315 .315 -38.3 -94.5 -132.5 -170.0 171.3 134.1 97.1 59.7 21.3 -18.5 -59.5 -99.4 -119.4 -157.6 145.1 107.3 .003 .004 .004 .004 .004 .004 .004 .004 .005 .005 .005 .005 .005 .004 .002 .001 -44.6 -83.3 -105.2 -135.1 -143.3 -176.7 160.5 133.8 108.7 81.8 53.1 22.3 -1.8 -40.2 -94.2 -143.2 S22 ANG -63.7 -105.9 -135.6 -165.2 -179.8 152.9 127.2 103.2 80.2 59.4 41.2 26.5 21.7 14.7 0.5 -13.6 Download S-Parameters, click here RECOMMENDED BIAS CIRCUIT 1000pF 1000pF 50Ω 50Ω 4 5 RFout 6 3 2 RFin 1 VGG VDD 50Ω VGG VDD 50Ω 1000pF 1000pF Note 1: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output: The two pins named VDD are internally connected. The same is true for VGG. 3 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC Case Style "GJ" Metal-Ceramic Hermetic Package 4-R 1.2±0.15 (0.047) 3.5 Max. (0.137) 3 4 2 5 1 6 1.3±0.15 (0.051) 7 (0.276) 3.8 (0.149) 7 (0.276) 11±0.15 (0.433) 15 (0.591) 6-0.3 (0.012) 7 INDEX 1Min. (0.039) 0.9 (0.035) 6±0.15 (0.236) 12±0.15 (0.472) 1. 2. 3. 4. 5. 6. 7. VDD RFin VGG VGG RFout VDD GND (Body) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0402M200 4