ETC FMM5806X

FMM5806X
24-27.0GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 26dBm (Typ.)
High Gain: G1dB = 9.5dB (Typ.)
High PAE: ηadd = 25% (Typ.)
Wide Frequency Band: 24.0-27.0 GHz
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5806X is a high-gain, wide band 2-stage MMIC
amplifier designed for operation in the 24.0-27.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited for
millimeter wave radio applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain Voltage
VDD
10
V
Gate Voltage
VGG
-3.0
V
Input Power
Pin
27
dBm
Storage Temperature
Tstg
-65 to +175
°C
Operating Backside Temperature
Top
-40 to +95
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 1.5 and -0.12 mA respectively.
3. This product should be hermetically packaged
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Symbol
Conditions
Min.
f
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Drain Current
Iddrf
Power-Added Efficiency
ηadd
Limits
Typ. Max.
GHz
24.0 - 27.0
VDD = 6V
IDD = 220mA (Typ.)
ZS = ZL = 50Ω
Unit
24
26
-
dBm
8.0
9.5
14.5
dB
-
280
380
mA
-
25
-
%
Input Return Loss
RLi
-
-12
-
dB
Output Return Loss
RLo
-
-8
-
dB
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.0
June 2000
1
This Material Copyrighted by Its Respective Manufacturer
FMM5806X
24-27.0GHz Power Amplifier MMIC
P1dB, G1dB vs. FREQUENCY
30 IDD = 220mA
VDD = 6V
28
P1dB
24
22
14
20
12
G1dB
18
10
16
G1dB (dB)
P1dB (dBm)
26
8
14
23
24
25
26
27
28
Frequency (GHz)
ASSEMBLY DRAWING
VGG
0.15µF
220pF
VDD
0.15µF
220pF
FMM5806X
RFout
RFin
Gap to be minimized at the output
2
This Material Copyrighted by Its Respective Manufacturer
FMM5806X
24-27.0GHz Power Amplifier MMIC
BONDING LAYOUT
VDD1
VDD2
VGG1
VGG2
RF in
RFout
S-PARAMETERS
VDD = 6V, IDS = 220mA
FREQUENCY
S11
(MHZ)
MAG
ANG
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
19000
20000
21000
22000
23000
24000
24500
25000
25500
26000
26500
27000
27500
28000
29000
30000
31000
32000
33000
34000
35000
36000
37000
38000
39000
40000
.989
.983
.978
.974
.971
.970
.972
.959
.924
.912
.901
.890
.877
.861
.844
.824
.804
.779
.745
.695
.602
.436
.357
.417
.485
.534
.562
.571
.569
.560
.561
.777
.848
.764
.668
.677
.807
.887
.921
.934
.939
.933
.932
-26.8
-39.5
-51.5
-63.1
-74.0
-84.5
-94.7
-105.4
-113.8
-121.5
-129.1
-136.8
-144.3
-151.7
-159.3
-167.2
-175.8
174.4
162.3
145.4
118.7
67.5
-26.3
-66.8
-94.1
-113.5
-127.9
-138.7
-147.3
-152.6
-154.1
-164.2
161.8
125.7
72.8
-1.7
-63.6
-101.8
-126.0
-142.3
-155.0
-165.6
-174.7
S21
S12
MAG
ANG
.402
.100
.013
.037
.058
.087
.393
1.127
1.353
1.330
1.413
1.545
1.648
1.683
1.676
1.683
1.743
1.897
2.179
2.655
3.410
4.317
4.566
4.309
3.960
3.637
3.389
3.237
3.192
3.257
3.406
2.952
1.332
.571
.244
.079
.011
.009
.002
.005
.007
.001
.005
28.1
-82.1
-65.8
47.4
-4.3
57.9
38.9
-22.6
-90.6
-132.5
-166.5
159.8
125.5
92.4
61.9
34.2
8.5
-16.7
-42.7
-71.3
-105.9
-150.0
157.4
132.2
109.2
88.0
68.1
48.6
28.4
6.1
-20.7
-95.5
-161.7
154.0
113.1
68.6
10.9
-147.2
24.6
-150.0
-141.1
-125.8
-83.4
3
This Material Copyrighted by Its Respective Manufacturer
S22
MAG
ANG
MAG
ANG
.001
.001
.001
.001
.001
.002
.002
.002
.003
.003
.003
.003
.002
.002
.002
.002
.002
.004
.006
.010
.015
.024
.029
.028
.028
.027
.026
.026
.027
.030
.034
.042
.029
.019
.012
.009
.007
.007
.007
.007
.007
.007
.007
-105.4
-96.8
-98.9
-97.8
-95.7
-97.9
-92.6
-92.5
-100.4
-103.8
-107.2
-107.8
-104.7
-103.1
-90.6
-66.2
-44.5
-38.3
-33.9
-40.5
-52.7
-79.2
-116.9
-135.9
-153.1
-170.0
174.7
155.9
136.7
113.8
85.6
9.3
-53.6
-87.3
-110.1
-111.9
-103.6
-92.8
-96.7
-95.2
-103.7
-90.4
-90.8
.432
.906
.963
.905
.932
.956
.950
.930
.883
.815
.706
.545
.370
.317
.408
.513
.591
.641
.674
.695
.703
.671
.553
.488
.433
.388
.350
.311
.267
.215
.169
.482
.706
.756
.788
.816
.840
.859
.874
.882
.891
.895
.898
-150.4
-150.0
-168.0
-179.8
176.6
167.0
157.5
146.8
134.6
119.7
99.4
70.6
25.3
-39.8
-89.1
-117.2
-135.1
-148.5
-159.4
-169.3
-180.0
166.8
154.6
151.3
149.7
148.3
145.7
141.6
133.2
114.5
66.9
-55.2
-107.7
-129.3
-141.2
-149.6
-156.4
-162.3
-167.7
-172.6
-177.2
178.1
173.5
FMM5806X
24-27.0GHz Power Amplifier MMIC
CHIP OUTLINE
VDD1
0
VGG1
820
VDD2
2810
VGG2
970 1120
1270
2170 2320
1410
Unit: µm
585
585
RFout
RFin
0
0
Chip Size: 1410±30µm x 2810±30µm
Chip Thickness:70±20µm
Pad Dimensions: 1. DC 80 x 80µm
2. RF 120 x 80µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0699M200
4
This Material Copyrighted by Its Respective Manufacturer