FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5806X is a high-gain, wide band 2-stage MMIC amplifier designed for operation in the 24.0-27.0 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for millimeter wave radio applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 27 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -40 to +95 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 1.5 and -0.12 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Symbol Conditions Min. f Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current Iddrf Power-Added Efficiency ηadd Limits Typ. Max. GHz 24.0 - 27.0 VDD = 6V IDD = 220mA (Typ.) ZS = ZL = 50Ω Unit 24 26 - dBm 8.0 9.5 14.5 dB - 280 380 mA - 25 - % Input Return Loss RLi - -12 - dB Output Return Loss RLo - -8 - dB Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.0 June 2000 1 This Material Copyrighted by Its Respective Manufacturer FMM5806X 24-27.0GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY 30 IDD = 220mA VDD = 6V 28 P1dB 24 22 14 20 12 G1dB 18 10 16 G1dB (dB) P1dB (dBm) 26 8 14 23 24 25 26 27 28 Frequency (GHz) ASSEMBLY DRAWING VGG 0.15µF 220pF VDD 0.15µF 220pF FMM5806X RFout RFin Gap to be minimized at the output 2 This Material Copyrighted by Its Respective Manufacturer FMM5806X 24-27.0GHz Power Amplifier MMIC BONDING LAYOUT VDD1 VDD2 VGG1 VGG2 RF in RFout S-PARAMETERS VDD = 6V, IDS = 220mA FREQUENCY S11 (MHZ) MAG ANG 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 24500 25000 25500 26000 26500 27000 27500 28000 29000 30000 31000 32000 33000 34000 35000 36000 37000 38000 39000 40000 .989 .983 .978 .974 .971 .970 .972 .959 .924 .912 .901 .890 .877 .861 .844 .824 .804 .779 .745 .695 .602 .436 .357 .417 .485 .534 .562 .571 .569 .560 .561 .777 .848 .764 .668 .677 .807 .887 .921 .934 .939 .933 .932 -26.8 -39.5 -51.5 -63.1 -74.0 -84.5 -94.7 -105.4 -113.8 -121.5 -129.1 -136.8 -144.3 -151.7 -159.3 -167.2 -175.8 174.4 162.3 145.4 118.7 67.5 -26.3 -66.8 -94.1 -113.5 -127.9 -138.7 -147.3 -152.6 -154.1 -164.2 161.8 125.7 72.8 -1.7 -63.6 -101.8 -126.0 -142.3 -155.0 -165.6 -174.7 S21 S12 MAG ANG .402 .100 .013 .037 .058 .087 .393 1.127 1.353 1.330 1.413 1.545 1.648 1.683 1.676 1.683 1.743 1.897 2.179 2.655 3.410 4.317 4.566 4.309 3.960 3.637 3.389 3.237 3.192 3.257 3.406 2.952 1.332 .571 .244 .079 .011 .009 .002 .005 .007 .001 .005 28.1 -82.1 -65.8 47.4 -4.3 57.9 38.9 -22.6 -90.6 -132.5 -166.5 159.8 125.5 92.4 61.9 34.2 8.5 -16.7 -42.7 -71.3 -105.9 -150.0 157.4 132.2 109.2 88.0 68.1 48.6 28.4 6.1 -20.7 -95.5 -161.7 154.0 113.1 68.6 10.9 -147.2 24.6 -150.0 -141.1 -125.8 -83.4 3 This Material Copyrighted by Its Respective Manufacturer S22 MAG ANG MAG ANG .001 .001 .001 .001 .001 .002 .002 .002 .003 .003 .003 .003 .002 .002 .002 .002 .002 .004 .006 .010 .015 .024 .029 .028 .028 .027 .026 .026 .027 .030 .034 .042 .029 .019 .012 .009 .007 .007 .007 .007 .007 .007 .007 -105.4 -96.8 -98.9 -97.8 -95.7 -97.9 -92.6 -92.5 -100.4 -103.8 -107.2 -107.8 -104.7 -103.1 -90.6 -66.2 -44.5 -38.3 -33.9 -40.5 -52.7 -79.2 -116.9 -135.9 -153.1 -170.0 174.7 155.9 136.7 113.8 85.6 9.3 -53.6 -87.3 -110.1 -111.9 -103.6 -92.8 -96.7 -95.2 -103.7 -90.4 -90.8 .432 .906 .963 .905 .932 .956 .950 .930 .883 .815 .706 .545 .370 .317 .408 .513 .591 .641 .674 .695 .703 .671 .553 .488 .433 .388 .350 .311 .267 .215 .169 .482 .706 .756 .788 .816 .840 .859 .874 .882 .891 .895 .898 -150.4 -150.0 -168.0 -179.8 176.6 167.0 157.5 146.8 134.6 119.7 99.4 70.6 25.3 -39.8 -89.1 -117.2 -135.1 -148.5 -159.4 -169.3 -180.0 166.8 154.6 151.3 149.7 148.3 145.7 141.6 133.2 114.5 66.9 -55.2 -107.7 -129.3 -141.2 -149.6 -156.4 -162.3 -167.7 -172.6 -177.2 178.1 173.5 FMM5806X 24-27.0GHz Power Amplifier MMIC CHIP OUTLINE VDD1 0 VGG1 820 VDD2 2810 VGG2 970 1120 1270 2170 2320 1410 Unit: µm 585 585 RFout RFin 0 0 Chip Size: 1410±30µm x 2810±30µm Chip Thickness:70±20µm Pad Dimensions: 1. DC 80 x 80µm 2. RF 120 x 80µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0699M200 4 This Material Copyrighted by Its Respective Manufacturer