MICROCIRCUIT DATA SHEET Original Creation Date: 03/21/97 Last Update Date: 05/04/01 Last Major Revision Date: 04/20/01 MNLM2941-X REV 4A1 LOW DROPOUT ADJUSTABLE REGULATOR General Description The LM2941 positive voltage regulator features the ability to source 1A of output current with a typical dropout voltage of 0.5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the ground pin current when the differential between the input voltage and the output voltage exceeds approximately 3V. The quiescent current with 1A of output current and an input-output differential of 5V is therefore only 30mA. Higher quiescent currents only exist when the regulator is in the dropout mode (Vin - Vout < 3V). Designed also for vehicular applications, the LM2941 and all regulated circuitry are protected from reverse battery installations or two-battery jumps. During line transients, such as load dump when the input voltage can momentarily exceed the specified maximum operating voltage, the regulator will automatically shut down to protect both the internal circuits and the load. Familiar regulator features such as short circuit and thermal overload protection are also provided. Industry Part Number NS Part Numbers LM2941 LM2941J-MLS LM2941J-QMLV LM2941J/883 LM2941WG-QMLV LM2941WG/883 Prime Die LM2941 Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Features - Output voltage adjustable from 5V to 20V Dropout voltage typically 0.5V @ Io = 1A Output current in excess of 1A Trimmed reference voltage Reverse battery protection Internal short circuit current limit Mirror image insertion protection TTL, CMOS compatible ON/OFF switch CONTROLLING DOCUMENT LM2941J-QMLV 5962-9166701VEA LM2941J/883 5962-9166701QEA LM2941WG-QMLV 5962-9166701VYA LM2941WG/883 5962-9166701QYA 2 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 (Absolute Maximum Ratings) (Note 1) Input Voltage (Survival Voltage < 100mS) 60V Internal Power Dissipation (Note 2, 3) Internally Limited Maximum Junction Temperature 150 C Storage Temperature Range -65 C < TA < +150 C Lead Temperature (Soldering, 10 seconds) Thermal Resistance ThetaJA CERDIP (Still Air) CERDIP (500LF/Min Air Flow) CERAMIC SOIC (Still Air) CERAMIC SOIC (500LF/Min Air Flow) 300 C 73 37 122 77 ThetaJC CERDIP CERAMIC SOIC Package Weight (Typcial) CERDIP CERAMIC SOIC ESD Susceptibility (Note 4) C/W C/W C/W C/W 3 C/W 5 C/W 1970mg 360mg 500V Note 1: Note 2: Note 3: Note 4: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. The package material for these devices allows much improved heat transfer over our standard ceramic packages. In order to take full advantage of this improved heat transfer, heat sinking must be provided between the package base (directly beneath the die), and either metal traces on, or thermal vias through, the printed circuit board. Without this additional heat sinking, device power dissipation must be calculated using junction-to-ambient, rather than junction-to-case, thermal resistance. It must not be assumed that the device leads will provide substantial heat transfer out of the package, since the thermal resistance of the leadframe material is very poor, relative to the material of the package base. The stated junction-to-case thermal resistance is for the package material only, and does not account for the additional thermal resistance between the package base and the printed circuit board. The user must determine the value of the additional thermal resistance and must combine this with the stated value for the package, to calculate the total allowed power dissipation for the device. Human body model, 100pF discharged through 1.5K Ohms. 3 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Recommended Operating Conditions (Note 1) Input Voltage 26V Operating Temperature Range -55 C < TA < +125 C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. 4 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Electrical Characteristics DC PARAMETERS: (The following conditions apply to all the following parameters, unless otherwise specified.) DC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF SYMBOL Vref PARAMETER Reference Voltage CONDITIONS NOTES 5mA < Io < 1A PINNAME UNIT SUBGROUPS MIN MAX 1.237 1.313 V 1 1.211 1.339 V 2, 3 Vrline Line Regulation Vo + 2V < Vin < 26V, Io = 5mA 3 10 mV/V 1, 2, 3 Vrload Load Regulation 50mA < Io < 1A 3 10 mV/V 1, 2, 3 Iq Quiescent Current Vo + 2V < Vin < 26V, Io = 5mA 15 mA 1 20 mA 2, 3 45 mA 1 60 mA 2, 3 0.8 V 1 1.00 V 2, 3 200 mV 1 300 mV 2, 3 1.6 3.5 A 1 1.3 3.7 A 2, 3 26 Vdc 1, 2, 3 V 1, 2, 3 V 1, 2, 3 V 1, 2, 3 100 uA 1 300 uA 2, 3 Vin = Vo + 5V, Io = 1A Vdo Dropout Voltage Io = 1A Io = 100mA Isc Short Circuit Current Vin max = 26V Maximum Operational Input Voltage 2 Reverse Polarity DC Input Voltage Ro = 100 Ohms, Vo > -0.6V 1 V(TO) ON/OFF Threshold Voltage ON Io < 1A 1 V(TO) ON/OFF Threshold Voltage OFF Io < 1A 1 ON/OFF Threshold Current V ON/OFF = 2.0V, Io < 1A 5 -15 0.8 2.00 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Electrical Characteristics AC PARAMETERS: (The following conditions apply to all the following parameters, unless otherwise specified.) AC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF SYMBOL RR PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Maximum Line Transient Vo max 1V above nominal Vo, Ro = 100 Ohms, T < 100mS 60 V 4, 5, 6 Reverse Polarity Transient Input Voltage T < 100mS, Ro = 100 Ohms -50 V 4, 5, 6 Ripple Rejection fo = 1KHz, 1 Vrms, IL = 100mA 4 0.02 %/V 4 4 0.04 %/V 5, 6 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) AC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF. "Delta Calculations performed on JAN S and QMLV devices at Group B, Subgroup 5 ONLY" Vref Reference Voltage Note Note Note Note 1: 2: 3: 4: 5mA < Io < 1A -25 Functional test go no go only. Condition for Vin. Limit = mV per Volt of Vout. %/V = % of Vin per Volt of Vout. 6 +25 mV 1 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Graphics and Diagrams GRAPHICS# DESCRIPTION 06333HRA2 CERDIP (J), 16 LEAD (B/I CKT) 06352HRA1 CERPACK (W), 16 LEAD (B/I CKT) J16ARL CERDIP (J), 16 LEAD (P/P DWG) P000158A CERDIP (J), 16 LEAD (PINOUT) P000378A CERAMIC SOIC, 16 LEAD (PINOUT) WG16ARC CERAMIC SOIC (WG), 16 LEAD (P/P DWG) See attached graphics following this page. 7 N NC 1 16 VIN NC 2 15 NC OUTPUT 3 14 N/C ADJ 4 13 N/C GND 5 12 GND NC 6 11 GND NC 7 10 NC NC 8 9 ON/OFF LM2941WG 16 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000378A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 MICROCIRCUIT DATA SHEET MNLM2941-X REV 4A1 Revision History Rev ECN # Originator Changes 0A0 M0001075 02/11/99 Rel Date Barbara Lopez Initial Release of: MNLM2941-X Rev. 0A0. Added note for power dissipation and reference to thermal resistance for Aluminum Nitride package. 1A1 M0003224 10/08/99 Rose Malone Update MDS: MNLM2941-X, Rev. 0A0 to MNLM2941-X, Rev. 1A1. 2A1 M0003559 11/28/00 Rose Malone Update MDS: MNLM2941-X, Rev. 1A1 to MNLM2941-X, Rev. 2A1. Changed Vdo, Io = 100mA, Max. condition subgroups to Subgroup 1 at 200mV and Subgroup 2 and 3 at 300mV. 2B1 M0003777 01/31/01 Rose Malone Update MDS: MNLM2941-X, Rev. 2A1 to MNLM2941-X, Rev. 2B1. Added MLS part number reference to Main Table. 3A1 M0003783 05/04/01 Rose Malone Update MDS: MNLM2941-X, Rev. 2B1 to MNLM2941-X, Rev. 3A1. Changed Electrical Section DC parameter Isc Max limit Subgroup 1 from 3.3A to 3.5A and Subgroups 2, 3 from 3.5A to 3.7A 4A1 M0003801 05/04/01 Rose Malone Update MDS: MNLM2941-X, Rev. 3A1 to MNLM2941-X, Rev. 4A1. Removed on Main Table, Feature Section and Graphics Section reference to K pkg. Added Main Table, Feature Section reference to WG pkg and Drift Value Parameter to Electrical Section. 8