5962-87710022A SMD

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add one vendor, CAGE 01295. Add case outline 2. Delete one vendor,
CAGE 18324. Editorial changes throughout.
91-12-11
M. A. FRYE
B
Add device class "V" devices. Add TABLE IIB for delta limits.
Delete vendor CAGE 04713.
97-09-23
R. MONNIN
C
Add radiation hardened requirements. - ro
99-01-28
R. MONNIN
D
Change total dose value for radiation requirements under 1.5. - lgt
99-03-15
R. MONNIN
E
Add case outline X. - ro
00-03-23
R. MONNIN
F
Modify paragraph 3.2.4. Remove radiation test circuit. - rrp
00-11-03
R. MONNIN
G
Drawing updated to reflect current requirements. - ro
02-10-17
R. MONNIN
H
Add RHA designator “R” level devices. Make changes to 1.5 and Table I.
Delete footnote 2/ “This parameter is not tested post irradiation” under Table I.
Delete 4.4.4.1.1 and 4.4.4.2. - ro
06-04-05
R. MONNIN
J
Add device type 03 tested at Low Dose Rate. Make changes to 1.2.2, 1.5,
Table I, figure 1, Table IIB, and 4.4.4.1. - ro
08-10-07
R. HEBER
K
Add paragraph 3.1.1 and microcircuit die Appendix A. Make changes to ICC,
VIO, CMRR, +IIB, -IIB, IIO, PSRR, and AVS tests as specified under Table I for
device type 03. Make changes to Table IIB for device type 03. - ro
08-12-09
R. HEBER
L
Update drawing to current MIL-PRF-38535 requirements. -rrp
15-01-15
C. SAFFLE
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
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REV STATUS
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OF SHEETS
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PMIC N/A
PREPARED BY
JOSEPH H. KERBY
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
D. A. DiCENZO
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
ROBERT P. EVANS
DRAWING APPROVAL DATE
87-12-01
REVISION LEVEL
L
MICROCIRCUIT, LINEAR, LOW POWER DUAL
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-87710
1 OF 23
5962-E119-15
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device class M and Q:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
87710
01
G
A
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
For device class V:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
87710
02
V
G
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
03
Circuit function
LM158
LM158A
LM158A
Low power, dual operational amplifier
Low power, dual operational amplifier
Low dose rate radiation hardened low
power, dual operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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DSCC FORM 2234
APR 97
Certification and qualification to MIL-PRF-38535
SIZE
5962-87710
A
REVISION LEVEL
L
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
G
P
X
2
MACY1-X8
GDIP1-T8 or CDIP2-T8
GDFP1-G10
CQCC1-N20
8
8
10
20
Package style
Can
Dual-in-line
Flat pack with gull wing leads
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (V+) ...........................................................................
Input voltage .....................................................................................
Differential input voltage ...................................................................
Storage temperature range ...............................................................
Maximum power dissipation (PD): 2/
Cases G and P ..............................................................................
Case X ..........................................................................................
Case 2 ...........................................................................................
Lead temperature (soldering, 10 seconds) ........................................
Case temperature for 60 seconds .....................................................
Junction temperature (TJ) .................................................................
Thermal resistance, junction-to-case (θJC):
Class M .........................................................................................
Class V (case G) ...........................................................................
Class V (case P) ...........................................................................
Class V (case X) ...........................................................................
Thermal resistance, junction-to-ambient (θJA):
Class M (case G) ..........................................................................
Class M (case P) ...........................................................................
Class M (case 2) ...........................................................................
Class V (case G) ...........................................................................
32 V or ±16 V
-0.3 V to +32 V
32 V
-65°C to +150°C
830 mW
500 mW
1375 mW
+300°C
+260°C
+150°C
See MIL-STD-1835
42°C/W
23°C/W
33°C/W
155°C/W
180°C/W
65°C/W
155°C/W (measured in still air)
80°C/W (measured in 500 linear feet/minute air flow)
Class V (case P) ........................................................................... 132°C/W (measured in still air)
81°C/W (measured in 500 linear feet/minute air flow)
Class V (case X) ........................................................................... 195°C/W (measured in still air)
131°C/W (measured in 500 linear feet/minute air flow)
1.4 Recommended operating conditions.
Operating supply voltage range (V+) ................................................ ±16 V
Ambient operating temperature range (TA) ....................................... -55°C to +125°C
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Must withstand the added PD due to short-circuit test (e.g., IOS).
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
L
SHEET
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads (Si)/s):
Device type 02 ................................................................................ ≤100 Krads (Si) 3/
Maximum total dose available (dose rate = 10 mrads (Si)/s):
Device type 03 ................................................................................ ≤100 Krads (Si) 4/
The manufacturer supplying device type 03 RHA parts on this drawing has performed a characterization test to demonstrate that
the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 Method 1019 paragraph
3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose rate
lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method
1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested
device type 02 was not tested for ELDRS, device type 03 will be added to distinguish it from the 02 device type.
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
________
3/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose
rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
4/ For device type 03, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be
sensitive in a high dose environment. Radiation end point limits for the noted parameters are guaranteed for the
conditions specified in MIL-STD-883, method 1019, condition D.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
L
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein .
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MILPRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
L
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Power supply current
ICC
V+ = 5 V
M,D,P,L,R
V+ = 5 V, RL = 100 kΩ,
Unit
Max
1,2,3
01, 02
1.2
1
02
1.5
1,2,3
03
1.2
1
01, 02
3
mA
VO = 1.4 V
V+ = 30 V
2,3
1
V+ = 30 V, RL = 100 kΩ,
VOH
1,2,3
V+ = 30 V, RL = 2 kΩ
V+ = 30 V, RL = 10 kΩ
Output voltage low
VOL
03
3
2,3
VO = 1.4 V
Output voltage high
4
V+ = 30 V, RL = 10 kΩ
4
All
26
03
27
1,2,3
01
20
1
02, 03
40
2,3
V+ = 30 V, ISINK = 1 µA
1,2,3
01
20
1
02, 03
40
1
100
03
40
2,3
V+ = 15 V,
Output sink current
ISINK
V+ = 15 V, VOUT = 2 V
V+ = 15 V, VOUT = 200 mV,
100
12
µA
1
10
mA
2,3
5
1
VOUT = 200 mV
mV
100
2,3
V+ = 5 V, RL = 10 kΩ
V
1
01, 02
03
12
µA
mA
+VI = 0 V, -VI = +65 mV
V+ = 15 V, VOUT = 2 V,
1
10
+VI = 0 V, -VI = +65 mV
2,3
5.0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
6
TABLE I. Electrical performance characteristics – continued.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Output source current
ISOURCE
1
V+ = 15 V, VOUT = 2 V
01, 02
1
+VI = 0 V, -VI = -65 mV
2,3
Max
-20
2,3
V+ = 15 V, VOUT = 2 V,
Unit
-10
03
-20
-10
Short-circuit current
IOS
V+ = 5 V, VOUT = 0 V
1
All
-60
Input offset voltage
VIO
V+ = 30 V, VCM = 0 V,
1
01
-5
5
V+ = 30 V, VCM = 28 V,
2,3
-7
7
-2
2
2,3
-4
4
M,D,P,L,R
1
-4
4
V+ = 30 V, VCM = 0 V,
1
-2.0
2.0
RS = 50 Ω, VO = 1.4 V
2,3
-4.0
4.0
1
-4.0
4.0
1
-2.0
2.0
1
-4.0
4.0
2, 3
-4.0
4.0
V+ = 5 V, VCM = 0 V,
1
-2.0
2.0
RS = 50 Ω, VO = 1.4 V
2,3
-4.0
4.0
1
-4.0
4.0
1
V+ = 5 V, VCM = 0 V
M,D,P,L,R
V+ = 30 V, VCM = 28.5 V,
RS = 50 Ω, VO = 1.4 V
M,D,P,L,R
V+ = 30 V, VCM = 28 V,
RS = 50 Ω, VO = 1.4 V
M,D,P,L,R
Common mode rejection
ratio
mA
02
03
mA
mV
V+ = 30 V,
CMRR
1
VIN = 0 V to 28 V
V+ = 30 V, RS = 50 Ω,
01, 02
70
03
70
dB
VIN = 0 V to 28.5 V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
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SHEET
7
TABLE I. Electrical performance characteristics – continued.
Test
Input bias current
Symbol
+IIB,
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
-150
-1
-300
-1
-50
-1
2,3
-100
-1
1
-60
-1
-50
-1
2,3
-100
-1
1
-60
-1
-30
30
-100
100
-10
10
-30
30
-10
10
-30
30
1
M,D,P,L,R
V+ = 5 V, VCM = 0 V
1
3/
M,D,P,L,R
Input offset current
IIO
1
V+ = 5 V, VCM = 0 V
01
02
03
01
2,3
1
02
2,3
1
03
2,3
Power supply rejection
ratio
PSRR
V+ = 5 V to 30 V,
1
VCM = 0 V
Common mode voltage
range
VCM
V+ = 30 V
V+ = 30 V 4/ 5/
01, 02
65
03
65
VDiff
01, 02
28
1
03
28.5
1,2,3
6/
nA
nA
dB
1,2,3
2, 3
Differential input voltage
Unit
Max
2,3
-IIB
Limits
Min
1
V+ = 5 V, VCM = 0 V
Device
type
V
28
03
32
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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REVISION LEVEL
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TABLE I. Electrical performance characteristics – continued.
Test
Large signal gain
Symbol
AVS
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
V+ = 15 V, 7/
Group A Device
subgroups type
Min
4
RL = 2 kΩ,
5,6
VO = 1 V to 11 V
Limits
01,02
50
03
50
01,02
25
03
25
Unit
Max
V/mV
1/
RHA devices 02 and 03 supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation.
Devices 02 and 03 are tested to all RHA levels (M, D, P, L, and R). Pre and Post irradiation values are identical
unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level,
TA = +25°C.
2/
For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose
rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in the
MIL-STD-883, method 1019, condition A. For device type 03, this part has been tested and does not demonstrate low
dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted
parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D.
3/
The direction of the input current is out of the device due to the PNP input stage. This current is essentially constant,
independent of the state of the output so no loading change exists on the input lines.
4/
The input common mode voltage of either input signal voltage should not be allowed to go negative by more than
0.3 V (at +25°C). The upper end of the common mode voltage range is V+ - 1.5 V (at +25°C), but either or both inputs
can go to +32 V without damage, independent of the magnitude of V+.
5/
Guaranteed by input offset voltage.
6/
Guaranteed parameter not tested.
7/
Datalog reading in K = V/mV.
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Device types
01, 02 and 03
Case outlines
G and P
Terminal
number
X
2
Terminal symbols
1
OUTPUT A
OUTPUT A
NC
2
INVERTING INPUT A
INVERTING INPUT A
OUTPUT A
3
NON-INVERTING
INPUT A
NON-INVERTING
INPUT A
NC
4
GND
GND
NC
5
NON-INVERTING
INPUT B
NC
INVERTING INPUT A
6
INVERTING INPUT B
NC
NC
7
OUTPUT B
NON-INVERTING
INPUT B
NON-INVERTING
INPUT A
8
V+
INVERTING INPUT B
NC
9
---
OUTPUT B
NC
10
---
V+
GND
11
---
---
NC
12
---
---
NON-INVERTING
INPUT B
13
---
---
NC
14
---
---
NC
15
---
---
INVERTING INPUT B
16
---
---
NC
17
---
---
OUTPUT B
18
---
---
NC
19
---
---
NC
20
---
---
V+
NC = No connection
FIGURE 1. Terminal connections.
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FIGURE 2. Logic diagram.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
L
SHEET
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
---
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
---
Device
class V
---
1,2,3,4,5,6 1/
1,2,3,4,5,6 1/
1,2,3,4,5,6 2/
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3
1,2,3
1,2,3 2/
1,2,3
1,2,3
1,2,3
1,4
1,4
1,4
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified and the delta limits
shall be computed with reference to the previous endpoint parameters.
TABLE IIB. Delta electrical characteristics at +25°C.
Test
Input offset
voltage
Symbol
Conditions
Device
type
Max
Delta
02
-2
2
0.5
03
-2
2
0.5
02
-2
2
0.5
03
-2
2
0.5
02, 03
-2
2
0.5
03
-2
2
0.5
02
-50
-1
10
03
-50
-1
10
RS = 50 Ω, VO = 1.4 V
V+ = 30 V, VCM = 28 V,
RS = 50 Ω, VO = 1.4 V
V+ = 30 V, VCM = 28.5 V,
RS = 50 Ω, VO = 1.4 V
V+ = 5 V, VCM = 0 V,
RS = 50 Ω, VO = 1.4 V
Input bias
current
IIB
V+ = 5 V, VCM = 0 V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Units
Min
V+ = 30 V, VCM = 0 V,
VIO
Limits
mV
mV
mV
nA
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C,
after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 02, condition D for device type 03, and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
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6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein)
to DLA Land and Maritime-VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime-VA.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
87710
02
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
02
03
LM158A
LM158A
Circuit function
Low power, dual operational amplifier
Low dose rate radiation hardened low
power, dual operational amplifier
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
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Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
02 (D-step)
03 (E-step)
A-1
A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
02
03
A-1
A-2
A.1.2.4.3 Interface materials.
Die type
Figure number
02
03
A-1
A-2
A.1.2.4.4 Assembly related information.
Die type
Figure number
02
03
A-1
A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figures A-1 and A-2.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figures A-1 and A-2.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figures A-1 and A-2.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figures
A-1 and A-2.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43218-3990 or telephone
(614)-692-0547.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DSCC-VA and have
agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
Die bond pad coordinate locations (D-step)
(Referenced to die center, coordinates in µm) NC = no connection, NU = not used
Signal name
Pad number
X / Y coordinates
Pad size
X
Y
X
Y
OUTPUT A
1
-381
320
92
x
92
INPUT A-
2
-496
-357
92
x
92
INPUT A+
3
-245
-355
92
x
92
GND
4
0
-355
92
x
92
INPUT B+
5
245
-355
92
x
92
INPUT B-
6
496
-357
92
x
92
OUTPUT B
7
381
320
92
x
92
V+
8
0
355
92
x
92
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 1219 µm x 940 µm
Die thickness: 330 µm nominal
Minimum pitch: 244 µm nominal
Interface materials.
Top metallization: Al
Backside metallization: Bare back
Glassivation.
Type: Vapox over metal (VOM only)
Thickness: 8 kÅ – 12 kÅ
Substrate: Silicon
Assembly related information.
Substrate potential: Floating
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions – continued.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
A
REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-87710
Die bond pad coordinate locations (E-step)
(Referenced to die center, coordinates in µm) NC = no connection, NU = not used
Signal name
Pad number
X / Y coordinates
Pad size
X
Y
X
Y
OUTPUT B
1
-336
400
92
x
92
V+
2
-371
-2
92
x
92
OUTPUT A
3
-336
-400
92
x
92
INPUT A-
4
372
-514
92
x
92
INPUT A+
5
371
-263
92
x
92
GND
6
371
-2
92
x
92
INPUT B+
7
371
263
92
x
92
INPUT B-
8
372
514
92
x
92
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 990.60 µm x 1295.40 µm
Die thickness: 304.8 µm nominal
Minimum pitch: 261 µm nominal
Interface materials.
Top metallization: Al 0.5% CU
Backside metallization: Bare back
Glassivation.
Type: Vapox over metal (VOM only)
Thickness: 8 kÅ – 12 kÅ
Substrate: Silicon
Assembly related information.
Substrate potential: Floating
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions – continued
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-87710
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REVISION LEVEL
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 15-01-15
Approved sources of supply for SMD 5962-87710 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-8771001GA
3/
LM158H/883
5962-8771001PA
01295
LM158JGB
3/
LM158J/883
5962-87710012A
01295
LM158FKB
5962-8771002GA
27014
LM158AH/883
5962-8771002PA
01295
LM158AJGB
27014
LM158AJ/883
5962-87710022A
01295
LM158AFKB
5962-8771002QXA
27014
LM158AWG/883
5962-8771002VGA
3/
LM158AH-QMLV
5962-8771002VPA
3/
LM158AJ-QMLV
5962-8771002VXA
3/
LM158AWG-QMLV
5962L8771002QGA
3/
LM158AHLQML
5962L8771002QPA
3/
LM158AJLQML
5962L8771002QXA
3/
LM158AWGLQML
5962L8771002VGA
3/
LM158AHLQMLV
5962L8771002VPA
3/
LM158AJLQMLV
5962L8771002VXA
3/
LM158AWGLQMLV
1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – Continued.
DATE: 15-01-15
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R8771002VGA
27014
LM158AHRQMLV
5962R8771002VPA
27014
LM158AJRQMLV
5962R8771002VXA
27014
LM158AWGRQMLV
5962R8771003VGA
27014
LM158AHRLQMLV
5962R8771003VPA
27014
LM158AJRLQMLV
5962R8771003VXA
27014
LM158AWGRLQMLV
5962R8771002V9A
27014
LM158A MDR
5962R8771003V9A
27014
LM158A MDE
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
01295
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
27014
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
2 of 2