ETC NTTD1P02R2

NTTD1P02R2
Product Preview
Power MOSFET
-1.45 Amps, -20 Volts
P–Channel Enhancement Mode
Dual Micro8 Package
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Features
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
–1.45 AMPERES
–20 VOLTS
160 m @ VGS = –4.5
Applications
Dual P–Channel
• Power Management in Portable and Battery–Powered Products, i.e.:
D
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
G
Value
Unit
Drain–to–Source Voltage
VDSS
–20
V
Gate–to–Source Voltage – Continuous
VGS
8.0
V
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
RθJA
PD
ID
ID
IDM
250
0.50
–1.45
–1.15
–10
°C/W
W
A
A
A
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
RθJA
PD
ID
ID
IDM
125
1.0
–2.04
–1.64
–16
°C/W
W
A
A
A
TJ, Tstg
–55 to
+150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = –20 Vdc, VGS = –4.5 Vdc,
Peak IL = –3.5 Apk, L = 5.6 mH,
RG = 25 Ω)
EAS
35
mJ
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260
°C
Operating and Storage
Temperature Range
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
November, 2000 – Rev. 0
8
1
Micro8
CASE 846A
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
1
8
2 YWW 7
3
6
BC
4
5
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
 Semiconductor Components Industries, LLC, 2000
S
1
Y
= Year
WW = Work Week
BC = Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTTD1P02R2
Micro8
4000/Tape & Reel
Publication Order Number:
NTTD1P02R2/D
NTTD1P02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) *
Symbol
Characteristic
Min
Typ
Max
Unit
–20
–
–
–12
–
–
–
–
–
–
–1.0
–10
–
–
–100
–
–
100
–0.7
–
–0.95
2.3
–1.4
–
–
–
–
0.130
0.175
0.190
0.160
0.250
–
gFS
–
2.5
–
Mhos
Ciss
–
265
–
pF
Coss
–
100
–
Crss
–
60
–
td(on)
–
10
–
tr
–
25
–
td(off)
–
30
–
tf
–
25
–
td(on)
–
10
–
tr
–
20
–
td(off)
–
30
–
tf
–
20
–
Qtot
–
5.0
10
Qgs
–
1.5
–
Qgd
–
2.0
–
VSD
–
–
–0.91
–0.72
–1.1
–
Vdc
trr
–
25
–
ns
ta
–
13
–
tb
–
12
–
QRR
–
0.015
–
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = –250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = –20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = –20 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current
(VGS = –8 Vdc, VDS = 0 Vdc)
IGSS
Gate–Body Leakage Current
(VGS = +8 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = –250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–State Resistance
(VGS = –4.5 Vdc, ID = –1.45 Adc)
(VGS = –2.7 Vdc, ID = –0.7 Adc)
(VGS = –2.5 Vdc, ID = –0.7 Adc)
RDS(on)
Forward Transconductance (VDS = –10 Vdc, ID = –0.7 Adc)
Vdc
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = –16
16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 4. and 5.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = –16
16 Vdc, ID = –1.45
1.45 Adc,
VGS = –4.5 Vdc, RG = 6.0 Ω)
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = –16
16 Vdc, ID = –0.7
0.7 Adc,
VGS = –4.5 Vdc, RG = 6.0 Ω)
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = –16 Vdc,
VGS = –4.5 Vdc,
ID = –1.45
1 45 Adc)
Ad )
ns
ns
nC
BODY–DRAIN DIODE RATINGS (Note 4.)
Diode Forward On–Voltage
(IS = –1.45 Adc, VGS = 0 Vdc)
(IS = –1.45 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = –1.45
1 45 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
4. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
* Handling precautions to protect against electrostatic discharge is mandatory.
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2
µC
NTTD1P02R2
3
–2.5 V
–2.3 V
–ID, DRAIN CURRENT (AMPS)
–ID, DRAIN CURRENT (AMPS)
3 –2.7 V
–2.9 V
–3.1 V
–3.3 V
–3.7 V
–4.5 V
2
TJ = 25°C
–2.1 V
–8 V
–1.9 V
1
–1.7 V
VGS = –1.5 V
0
0.25
0.5
0.75
1
1.25
1.5
TJ = –55°C
1
1.75
TJ = 100°C
TJ = 25°C
1
2
1.5
2.5
3
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
ID = –1.45 A
TJ = 25°C
0.3
0.2
0.1
0
2
4
6
8
10
12
3.5
0.3
TJ = 25°C
VGS = –2.5 V
0.2
VGS = –2.7 V
VGS = –4.5 V
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
100
VGS = 0 V
ID = –1.45 A
VGS = –4.5 V
–IDSS, LEAKAGE (nA)
1.4
0.5
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.4
0
0
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
2
0
0
RDS(on), DRAIN–TO–SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ –10 V
1.2
1
TJ = 125°C
TJ = 100°C
10
0.8
0.6
–50
1
–25
0
25
75
50
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
4
Figure 5. On–Resistance Variation with
Temperature
8
12
16
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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3
20
VDS = 0 V
Ciss
VGS = 0 V
C, CAPACITANCE (pF)
TJ = 25°C
600
Crss
400
Ciss
200
Coss
Crss
0
5
10
0
–VGS –VDS
5
10
15
20
5
20
QT
18
16
4
14
–VGS
3
Q1
12
10
Q2
8
2
6
1
ID = –1.45 A
TJ = 25°C
–VDS
4
2
0
0
0
1
2
3
4
5
6
Qg, TOTAL GATE CHARGE (nC)
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
800
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
NTTD1P02R2
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
–IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
VDD = –16 V
ID = –1.45 A
VGS = –4.5 V
tr
td (off)
tf
10
td (on)
1.2
0.8
0.4
0
1
10
1
100
ID , DRAIN CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
1.6
100
0.4
0.5
0.6
0.7
0.8
1
–VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
VGS = 8 V
SINGLE PULSE
TC = 25°C
di/dt
IS
10
100 s
trr
1 ms
ta
1
tb
TIME
10 ms
0.25 IS
tp
0.1
0.01
0.9
RG, GATE RESISTANCE (OHMS)
IS
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
dc
10
100
Figure 12. Diode Reverse Recovery Waveform
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
100
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
0.1
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 13. Thermal Response
INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self–align when
subjected to a solder reflow process.
0.041
1.04
0.208
5.28
0.126
3.20
0.015
0.38
0.0256
0.65
inches
mm
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5
NTTD1P02R2
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TYPICAL SOLDER HEATING PROFILE
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 14 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
150°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SPIKE"
SOAK"
170°C
150°C
100°C
140°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 14. Typical Solder Heating Profile.
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6
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
160°C
100°C
50°C
STEP 6
VENT
NTTD1P02R2
TAPE & REEL INFORMATION
Micro8
Dimensions are shown in millimeters (inches)
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
B
B
1.85 (.072)
1.65 (.065)
A
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
A
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION A–A
5.40 (.212)
5.20 (.205)
SECTION B–B
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
3. INCLUDES FLANGE DISTORTION AT OUTER EDGE.
4. DIMENSION MEASURED AT INNER HUB.
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7
NTTD1P02R2
PACKAGE DIMENSIONS
Micro8
CASE 846A–02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
–A–
–B–
K
PIN 1 ID
G
D 8 PL
0.08 (0.003)
–T–
M
T B
S
A
S
SEATING
PLANE
0.038 (0.0015)
C
H
L
J
DIM
A
B
C
D
G
H
J
K
L
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
--1.10
0.25
0.40
0.65 BSC
0.05
0.15
0.13
0.23
4.75
5.05
0.40
0.70
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
--0.043
0.010
0.016
0.026 BSC
0.002
0.006
0.005
0.009
0.187
0.199
0.016
0.028
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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NTTD1P02R2/D