NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS(on), http://onsemi.com Schottky Diode with Low VF MOSFET –2.3 AMPERES –20 VOLTS 90 m @ VGS = –4.5 V • Logic Level Gate Drive • Independent Pin–Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use • Less Component Placement for Board Space Savings • SO–8 Surface Mount Package, Mounting Information for SO–8 Package Provided Applications • Power Management in Portable and Battery–Powered Products, i.e.: SCHOTTKY DIODE 2.0 AMPERES 20 VOLTS 58 mV @ IF = 2.0 A Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS –20 V Gate–to–Source Voltage – Continuous VGS 10 V Thermal Resistance – Junction–to–Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4.) RθJA PD ID ID IDM 175 0.71 –2.3 –1.45 –9.0 °C/W W A A A Thermal Resistance – Junction–to–Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4.) RθJA PD ID ID IDM 105 1.19 –2.97 –1.88 –12 °C/W W A A A Thermal Resistance – Junction–to–Ambient (Note 3.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4.) RθJA PD ID ID IDM 62.5 2.0 –3.85 –2.43 –15 °C/W W A A A TJ, Tstg –55 to +150 °C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –4.5 Vdc, Peak IL = –5.0 Apk, L = 28 mH, RG = 25 Ω) EAS Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 350 A 8 A S 1 G SO–8 CASE 751 STYLE 18 °C 1. Minimum FR–4 or G–10 PCB, Steady State. 2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State. 3. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. 8 2 7 6 3 4 5 C C D D TOP VIEW MARKING DIAGRAM & PIN ASSIGNMENTS Anode Anode Source Gate 1 8 2 7 3 E2P102L LYWW 4 6 5 Cathode Cathode Drain Drain (Top View) mJ 260 1 E2P102L= Device Code L = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping NTMSD2P102LR2 SO–8 2500/Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 0 1 Publication Order Number: NTMSD2P102LR2/D NTMSD2P102LR2 SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VRRM VR 20 V IO 1.0 A Peak Repetitive Forward Current (Note 5.) (Rated VR, Square Wave, 20 kHz, TA = 105°C) IFRM 2.0 A Non–Repetitive Peak Surge Current (Note 5.) (Surge Applied at Rated Load Conditions, Half–Wave, Single Phase, 60 Hz) IFSM 20 A Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 5.) (Rated VR, TA = 100°C) 5. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) * Characteristic Symbol Min Typ Max –20 – – –12.7 – – – – – – –1.0 –25 – – –2.0 – – –100 – – 100 –0.5 – –0.90 2.5 –1.5 – – – – 0.070 0.100 0.110 0.090 0.130 0.150 – 4.2 – Ciss – 550 750 Coss – 200 300 Crss – 100 175 Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = –250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = –16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = –16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = –20 Vdc, TJ = 25°C) IDSS Gate–Body Leakage Current (VGS = –10 Vdc, VDS = 0 Vdc) IGSS Gate–Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc µAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = –250 µAdc) Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–State Resistance (VGS = –4.5 Vdc, ID = –2.4 Adc) (VGS = –2.7 Vdc, ID = –1.2 Adc) (VGS = –2.5 Vdc, ID = –1.2 Adc) RDS(on) Forward Transconductance (VDS = –10 Vdc, ID = –1.2 Adc) Vdc mV/°C Ω gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = –16 16 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Reverse Transfer Capacitance * Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 pF NTMSD2P102LR2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) * Characteristic Symbol Min Typ Max Unit td(on) – 10 20 ns tr – 35 65 td(off) – 33 60 tf – 29 55 td(on) – 15 – tr – 40 – td(off) – 35 – tf – 35 – Qtot – 10 18 Qgs – 1.5 – Qgd – 5.0 – VSD – – –0.88 –0.75 –1.0 – Vdc trr – 37 – ns ta – 16 – tb – 21 – QRR – 0.025 – SWITCHING CHARACTERISTICS (Notes 6. and 7.) Turn–On Delay Time (VDD = –10 Vdc, ID = –2.4 Adc, VGS = –4.5 4 5 Vdc, Vdc RG = 6.0 Ω) Rise Time Turn–Off Delay Time Fall Time Turn–On Delay Time (VDD = –10 Vdc, ID = –1.2 Adc, VGS = –2.7 2 7 Vdc, Vdc RG = 6.0 Ω) Rise Time Turn–Off Delay Time Fall Time Total Gate Charge (VDS = –16 Vdc, VGS = –4.5 Vdc, ID = –2.4 2 4 Adc) Ad ) Gate–Source Charge Gate–Drain Charge ns nC BODY–DRAIN DIODE RATINGS (Note 6.) Diode Forward On–Voltage (IS = –2.4 Adc, VGS = 0 Vdc) (IS = –2.4 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = –2.4 2 4 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/µs) Reverse Recovery Stored Charge µC * Handling precautions to protect against electrostatic discharge is mandatory. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 6.) VF Maximum Instantaneous Forward Voltage g 1 0 Adc Ad IF = 1.0 IF = 2.0 Adc IR Maximum Instantaneous Reverse Current VR = 20 Vdc Vd Maximum Voltage Rate of Change VR = 20 Vdc dV/dt 6. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 TJ = 25°C TJ = 125°C 0.47 0.58 0.39 0.53 TJ = 25°C TJ = 125°C 0.05 10 10,000 Volts mA V/s NTMSD2P102LR2 5 4 VGS = –10 V VGS = –4.5 V VGS = –2.5 V 3 TJ = 25°C –ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) VGS = –2.1 V VGS = –1.9 V 2 VGS = –1.7 V 1 VGS = –1.5 V 0 2 4 6 8 3 2 TJ = 25°C 1 TJ = 100°C 1 10 TJ = 55°C 1.5 2 3 2.5 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics. Figure 2. Transfer Characteristics. RDS(on), DRAIN–TO–SOURCE RESISTANCE () RDS(on), DRAIN–TO–SOURCE RESISTANCE () 4 0 0 0.2 TJ = 25°C 0.15 0.1 0.05 0 2 4 6 8 0.12 TJ = 25°C 0.1 VGS = –2.7 V 0.08 VGS = –4.5 V 0.06 0.04 1 1.5 2 2.5 3 3.5 4 4.5 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) –ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance vs. Gate–to–Source Voltage. Figure 4. On–Resistance vs. Drain Current and Gate Voltage. 1.6 1.4 1000 VGS = 0 V ID = –2.4 A VGS = –4.5 V 1.2 1 0.8 0.6 –50 TJ = 125°C 100 –IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) VDS > = –10 V TJ = 100°C 10 TJ = 25°C 1 0.1 0.01 –25 50 100 125 0 25 75 TJ, JUNCTION TEMPERATURE (°C) 150 0 Figure 5. On–Resistance Variation with Temperature. 4 8 12 16 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–to–Source Leakage Current vs. Voltage. http://onsemi.com 4 20 C, CAPACITANCE (pF) VDS = 0 V 1200 VGS = 0 V Ciss TJ = 25°C 900 Crss Ciss 600 300 Coss Crss 0 10 5 0 –VGS –VDS 5 10 15 20 5 20 18 QT 16 4 14 3 12 VGS Q1 10 Q2 8 2 6 1 ID = –2.4 A TJ = 25°C VDS 4 2 0 0 0 2 4 6 8 12 10 14 Qg, TOTAL GATE CHARGE (nC) GATE–TO–SOURCE OR DRAIN–TO–SOURCE –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1500 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTMSD2P102LR2 Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 100 td (off) tr t, TIME (ns) t, TIME (ns) VDD = –10 V ID = –1.2 A VGS = –2.7 V 100 tr td (on) 10 tf td (off) VDD = –10 V ID = –2.4 A VGS = –4.5 V td (on) 1.0 10 10 1.0 tf 100 RG, GATE RESISTANCE (OHMS) 1.0 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance –IS, SOURCE CURRENT (AMPS) 2 1.6 VGS = 0 V TJ = 25°C di/dt IS trr 1.2 ta tb TIME 0.8 0.25 IS tp IS 0.4 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 12. Diode Reverse Recovery Waveform –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current http://onsemi.com 5 NTMSD2P102LR2 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 Normalized to R∅ja at Steady State (1 inch pad) 0.1 0.0125 Ω 0.0563 Ω 0.110 Ω 0.273 Ω 0.113 Ω 0.436 Ω 2.93 F 152 F 261 F 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F Single Pulse 0.01 1E–03 1E–02 1E–01 1E+00 1E+03 1E+02 1E+03 t, TIME (s) Figure 13. FET Thermal Response TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C 1.0 85°C 25°C –40°C 0.1 TJ = 125°C 85°C 1.0 25°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage http://onsemi.com 6 1.4 NTMSD2P102LR2 IR , REVERSE CURRENT (AMPS) 1E–2 TJ = 125°C 1E–3 85°C 1E–4 1E–5 25°C 1E–6 1E–7 0 5.0 15 10 20 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1E–1 TJ = 125°C 1E–2 1E–3 1E–4 25°C 1E–5 1E–6 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 17. Maximum Reverse Current 1000 100 10 10 15 20 1.6 dc FREQ = 20 kHz 1.4 1.2 SQUARE WAVE 1.0 Ipk/Io = 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 0.6 dc SQUARE WAVE Ipk/Io = Ipk/Io = 5.0 0.4 Ipk/Io = 10 Ipk/Io = 20 0.3 0.2 0.1 0 0 0.5 100 120 Figure 19. Current Derating 0.7 0.5 80 TA, AMBIENT TEMPERATURE (°C) Figure 18. Typical Capacitance PFO, AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) TYPICAL CAPACITANCE AT 0 V = 170 pF 5.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Typical Reverse Current 0 15 10 1.0 1.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 20. Forward Power Dissipation http://onsemi.com 7 2.0 140 160 NTMSD2P102LR2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.0031 CHIP JUNCTION 0.0014 F 0.01 0.01 0.0154 0.1521 0.4575 0.3719 0.0082 F 0.1052 F SINGLE PULSE 2.7041 F 158.64 F AMBIENT 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 Figure 21. Schottky Thermal Response http://onsemi.com 8 1.0E+01 1.0E+02 1.0E+03 NTMSD2P102LR2 INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 inches mm 0.024 0.6 0.050 1.270 SOLDERING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 9 NTMSD2P102LR2 TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 22 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 22. Typical Solder Heating Profile http://onsemi.com 10 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT NTMSD2P102LR2 PACKAGE DIMENSIONS SO–8 CASE 751–06 ISSUE T D A 8 E 5 0.25 H 1 M B M 4 h B e X 45 A C SEATING PLANE L 0.10 A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C B 0.25 M C B S A S DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0 7 STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 11 ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE NTMSD2P102LR2 FETKY is a trademark of International Rectifier ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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