L3121B Application Specific Discretes A.S.D.TM PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. HOLDING CURRENT = 150 mA min. HIGH SURGE CURRENT CAPABILITY. IPP = 100A , 10/1000 µs DESCRIPTION SIP4 SCHEMATIC DIAGRAM This device has been especially designed to protect a subscriber line interface circuit (SLIC) with an integrated ring generator. Line Gate P Used with the recommended application circuit, each line (TIP and RING) is protected against positive and negative surges. In the positive polarity, the breakdown voltage is referenced to the + VB , and in the negative polarity, the breakdown voltage is referenced to the -Vbat . Gate N Its high surge current capability makes the L3121B a reliable protectiondevice for very exposed equipment, or when series resistors are very low. GND CONNECTION DIAGRAM May 1999 - Ed:4A 1/7 L3121B Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) ITU-T K20 4000 10/700 5/310 100 - VDE0433 4000 10/700 5/310 100 - VDE0878 4000 1.2/50 1/20 100 - level 4 level 4 10/700 1.2/50 5/310 8/20 100 100 - FCC Part 68, lightning surge type A 1500 800 10/160 10/560 10/160 10/560 200 100 - FCC Part 68, lightning surge type B 1000 9/720 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 2/10 10/1000 2/10 10/1000 250 100 - BELLCORE TR-NWT-001089 Second level 5000 2/10 2/10 250 10 COMPLIES WITH THE FOLLOWING STANDARDS: IEC1000-4-5 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit Peak pulse current 10/1000 µs 2/10 µs 100 250 A ITSM Non repetitive surge peak on-state current tp = 10 ms 50 A VMLG VMGL Maximum voltage LINE/GND. Maximum voltage GATE/LINE. 100 80 V V - 40 to + 150 + 150 °C °C 260 °C - 40 to + 85 °C Value Unit 80 °C/W IPP Tstg Tj TL Top Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s Operating temperature range (see note 1) Note 1: Variation of electrical parameters is given by curves. Pulse waveform 10/1000µs % IPP 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) 2/7 Parameter Junction-to-ambient L3121B ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) Symbol I Parameter IPP VRM Stand-off voltage IRM Reverse leakage current VBR Breakdown voltage VBO Breakover voltage IBO IH IH Holding current IBO Breakover current IPP Peak pulse current VGN IGN, IGP C VRM VBO VBR Gate voltage Triggering gate current Capacitance 1- OPERATION WITHOUT GATE IRM @ VRM Type max. VBR @ IR min. VBO @ IBO IH C max. typ. max. min. max. note 1 note 2 note 1 L3121B µA V V mA V mA mA mA pF 5 8 60 90 100 1 180 200 500 150 200 2- OPERATION WITH GATE VGN @ IGN = 200mA Type L3121B IGN @ VAC = 60V IGP @ VAC = 60V min. max. min. max. max. V V mA mA mA 0.6 1.8 80 200 180 Note 1 :See the reference test circuits for IH, IBO and VBO parameters. Note 2 :VR = 5 V, F = 1MHz. 3/7 L3121B REFERENCE TEST CIRCUIT FOR IBO and VBO parameters: t p = 20ms Auto Transformer 220V/2A R1 static relay. 14 0 R2 240 K 220V Vout IBO , IH measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. This test can be performed if the reference test circuit can’t be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the line and GND pins of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max. 4/7 L3121B Fig. 1: Surge peak current versus overload duration (typical values). Fig. 2: Typical relative variation of holding current versus ambient temperature. IH [Tamb] IH [Tamb = 25°C] ITSM(A) 40 1.45 F=50H z Tj initial=25°C 35 1.30 30 25 1.15 20 15 1.0 10 5 0.85 t(s) 0 1E-2 1E-1 Tamb (°C) 1E+0 1E+1 1E+2 1E+3 Fig. 3: Typical relative variation of breakdown voltage versus ambient temperature. 0.70 -40 -20 0 20 40 60 80 85 Fig. 4: Junction capacitance versus reverse applied voltage. VBR [Tamb] VBR [Tamb = 25°C] 2.04 IR = 1 mA 2.00 1.06 1.02 0.98 0.94 Tamb (°C) 0.90 -40 -20 0 20 40 60 80 85 Fig. 5: Typical relative variation of leakage current versus ambient temperature. Fig. 6: Typical relative variation of peak pulse current (10/1000µs) versus ambient temperature. Ipp[Tamb] / Ipp [25°C] IR[Tj] / IR [Tj=25°C] 1.10 1E+5 1E+4 1.05 1E+3 1.00 1E+2 0.95 1E+1 Tj(°C) 1E+0 25 50 75 Tamb(°C) 100 125 0.90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 5/7 L3121B Typical Slic Protection Concept. -Vbat +VB LINE R1 -Vbat R3 GN L3121B TIP +VB GP SLIC 220nF GND 220nF GN L3121B R2 L3000N GP R4 RING LINE GND ORDER CODE L3121B DEVICE CODE MARKING : Logo, Date Code, Part Number 6/7 L3121B PACKAGE MECHANICAL DATA SIP4 (Plastic) DIMENSIONS REF. B Millimetres Min. C Typ. Max. Min. A a1 A I 2.80 L b2 Z c1 e c2 e3 0.110 1.35 1.75 0.053 0.069 C 3.18 3.43 0.125 0.135 c1 0.38 0.50 0.015 0.020 c2 1.30 0.051 e 2.54 0.100 e3 7.62 0.200 Z L3121B 0.020 b2 L Marking 0.400 0.50 I Ordre code 0.280 10.15 b1 b1 Typ. Max. 7.10 B a1 Inches Package Weight SIP4 0.55 g 10.50 3.30 0.413 0.130 1.50 Base qty 0.059 Delivery mode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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