DG201A/202 Monolithic Quad SPST CMOS Analog Switches Features Benefits Applications Wide Input Range Low Distortion Switching Can Be Driven from Comparators or Op Amps Without Limiting Resistors 15-V Input Range Low Off Leakage—ID(on): 0.1 nA Low On-Resistance—rDS(on): 115 44-V Maximum Supply Ratings TTL and CMOS Compatible Disk Drives Radar Systems Communications Systems Sample-and-Hold Description The DG201A and DG202 are quad SPST analog switches designed to provide accurate switching over a wide range of input signals. When combining a low on-resistance and a wide signal range (15 V) with low charge-transfer these devices are well suited for industrial and military applications. conducts equally well in both directions when on. When off these switches will block up to 30 V peak-to-peak and have a 44-V absolute maximum power supply rating. Built on Siliconix’ high voltage metal gate process to achieve optimum switch performance, each switch The DG201B/DG202B upgrades are recommended for new designs. These two devices are differentiated by the type of switch actions (See Truth Table). Functional Block Diagram and Pin Configuration Dual-In-Line and SOIC DG201A LCC D1 IN1 NC IN2 D2 DG201A IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Key S1 V– NC GND S4 3 2 1 20 19 4 18 5 17 6 16 7 15 8 14 9 S2 V+ NC NC S3 10 11 12 13 D4 IN4 NC IN3 D3 Top View Top View Truth Table DG201A DG202 0 ON OFF 1 OFF ON Logic Logic “0” 0.8 V Logic “1” 2.4 V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70036. Siliconix S-52880—Rev. E, 28-Apr-97 1 DG201A/202 Ordering Information Temp Range Package Part Number 0 to 70_C 16-Pin Plastic DIP –25 to 85_C 16-Pin CerDIP DG201ABK –40 to 85_C 16-Pin Narrow SOIC DG201ADY DG201ACJ DG202CJ DG201AAK DG201AAK/883, JM38510/12302BEA –55 to 125_C 16-Pin CerDIP 7705301EA DG202AK DG202AK/883 JM38510/12302BEC –55 to 125_C 16-Pin Sidebraze LCC-20 7705301EC 77053012A Absolute Maximum Ratings Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . 70 mA Storage Temperature (K, Z Suffix) . . . . . . . . . . . . . –65 to 150_C (J, Y Suffix) . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIP and Sidebrazee . . . . . . . . . . . . . . . . . . . . . . . . . . LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 640 mW 900 mW 750 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C f. Derate 10 mW/_C above 75_C Schematic Diagram (Typical Channel) V+ S V– – + V+ GND INX D V– Figure 1. 2 Siliconix S-52880—Rev. E, 28-Apr-97 DG201A/202 Specificationsa Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V– V = –15V 15V V+ VIN = 2.4 V, 0.8 Vf A Suffix –55 to 125_C Tempb Typc Mind B, C, D Suffix Maxd Mind 15 –15 Maxd Unit 15 V Analog Switch Analog Signal Rangee VANALOG Full Room –15 115 175 175 250 250 Drain-Source On-Resistance rDS(on) VD = 10 V V, IS = 1 mA Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full 0.02 –1 –100 1 100 –5 –100 5 100 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full 0.02 –1 –100 1 100 –5 –100 5 100 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full 0.15 –1 –200 1 200 –5 –200 5 200 VIN = 2.4 V Room Full –0.0004 –1 –1 VIN = 15 V Room Full 0.003 IINL VIN = 0 V Room Full –0.0004 Turn-On Time tON Room 480 600 600 Turn-Off Time tOFF See Switchingg Time T t Circuit Test Ci it Room 370 450 450 Room 20 Room 5 Room 5 Room 16 Room 70 Room 90 Full W nA Digital Control p Current with Input Input Voltage High I tV lt Hi h IINH Input Current with Input Voltage Low –1 –10 1 10 –1 –10 1 10 mA –1 –10 Dynamic Characteristics Charge Injection Q Source-Off Capacitance CS(off) Drain-Off Capacitance Channel On Capacitance CD(off) CD(on) + CS(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK CL = 1000 pF, Vg= 0 V Rg = 0 W VS = 0 V V, VIN = 5 V V, f = 1 MHz VD = VS = 0 V, VIN = 0 V f = 1 MHz VIN = 5 V V, RL = 75 W VS = 2 V, f = 100 kHz ns pC pF dB Power Supply Positive Supply Current I+ Negative Supply Current I– All Channels On or Off Room 0.9 Room –0.3 2 –1 2 mA –1 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52880—Rev. E, 28-Apr-97 3 DG201A/202 Typical Characteristics Charge Injection vs. Analog Voltage rDS(on) vs. VD and Power Supply Voltage 70 300 V+ = 15 V, V– = –15 V TA = 25_C 60 TA = 25_C 250 50 5 V rDS(on) ( ) Q (pC) 40 30 QD 20 10 200 8 V QS 0 100 –10 –20 50 –30 –15 –10 –5 0 5 10 VANALOG – Analog Voltage (V) –25 15 rDS(on) vs. VD and Temperature 180 –15 25 V+ = 15 V, V– = –15 V VD = 14 V 10 nA 140 –5 5 15 VD – Drain Voltage (V) Leakage vs. Temperature 100 nA V+ = 15 V, V– = –15 V 160 1 nA 125_C 120 I S , ID rDS(on) ( ) 10 V 12 V 15 V 150 85_C 100 pA IS(off), ID(off), ID(on) 25_C 100 10 pA 0_C 80 1 pA –40_C –55_C 60 –15 –10 –5 0 5 VD – Drain Voltage (V) 10 0.1 pA –55 –35 15 Supply Current vs. Switching Frequency 85 105 125 Insertion Loss vs. Frequency 0.0 V+ = 15 V V– = –15 V 2 I+ LOSS (dB) I+, I– (mA) 5 25 45 65 Temperature (_C) 2.0 6 4 –15 0 I– 1 M V+ = 15 V V– = –15 V Ref. 0.0 dBm –2.0 1 k See Figures 3 and 4 –4.0 –2 RL = 50 –6.0 –4 –6 1k 4 10 k 100 k f – Frequency (Hz) 1M 1k 10 k 100 k 1M f – Frequency (Hz) 10 M Siliconix S-52880—Rev. E, 28-Apr-97 DG201A/202 Typical Characteristics (Cont’d) Crosstalk and Off Isolation vs. Frequency Leakage Current vs. Analog Voltage 0 –20 V+ = 15 V V– = –15 V Ref. 0 dBm RL = 50 8 6 4 –60 I S , I D (pA) X TALK , ISO (dB) –40 10 Off Isolation –80 Crosstalk –100 2 IS(off), ID(off) 0 ID(on) –2 V+ = 15 V V– = –15 V TA = 25_C For ID(off), VS = –VD For IS(off), VD = – VS –4 –120 See Figures 3 and 4 –6 –140 –8 –160 10 k 100 k 1M f – Frequency (Hz) –10 10 M –20 Switching Time vs. Temperature 1000 V+ = 15 V V– = –15 V VS = 2 V 900 800 700 t ON , t OFF (ns) t ON , t OFF (ns) 800 20 Switching Time vs. Power Supply Voltage 1000 900 –15 –10 –5 0 5 10 15 VD or VS – Drain or Source Voltage (V) 600 tON 500 400 700 600 tON 500 400 tOFF 300 300 200 200 100 –55 –35 –15 5 25 45 65 Temperature (_C) Siliconix S-52880—Rev. E, 28-Apr-97 85 105 125 100 tOFF 10 12 14 16 18 20 V+ – Positive Supply (V) 22 5 DG201A/202 Test Circuits VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V Logic Input Switch Input 3V V+ tr <20 ns tf <20 ns 50% 0V VS = +2 V tOFF RL 1 kW IN VS 3V GND 90% Switch Output VO D S CL 35 pF V– VO tON –15 V VO = VS RL RL + rDS(on) Figure 2. Switching Time +15 V C +15 V V+ C S1 VS V+ S VS VIN D 50 W IN1 0V, 2.4 V Rg = 50 W 0V, 2.4 V D1 Rg = 50 W RL IN GND V– C S2 NC VO D2 RL IN2 0V, 2.4 V GND V– C –15 V C = RF bypass Off Isolation = 20 log VS VO XTALK Isolation = 20 log Figure 3. Off Isolation VS –15 V VO Figure 4. Channel-to-Channel Crosstalk +15 V DVO Rg VO V+ S D IN Vg 3V GND V– VO CL 1000 pF INX ON OFF ON DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO –15 V Figure 5. Charge Injection 6 Siliconix S-52880—Rev. E, 28-Apr-97 DG201A/202 Application Hintsa V+ Positive Supply Voltage (V) V– Negative Supply Voltage (V) VIN Logic Input Voltage VINH(min)/VINL(max) (V) VS or VD Analog Voltage Range (V) 15 –15 2.4/0.8 –15 to 15 10 –12 2.4/0.8 –12 to 12 12 –10 2.2/0.6 –10 to 10 8b –8 2.0/0.5 –8 to 8 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Operation below 8 V is not recommended. Applications 15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V –15 V – LM101A VIN + J202 5 MW 50 pF 200 W 2N4400 5.1 MW V– 30 pF DG201A –15 V VOUT 1000 pF J500 J507 –15 V Acquisition Time = 25 ms Aperature Time = 1 ms Sample to Hold Offset = 5 mV Droop Rate = 5 mV/s Figure 6. Sample-and-Hold Siliconix S-52880—Rev. E, 28-Apr-97 7 DG201A/202 Applications (Cont’d) +15 V 160 V1 C4 150 pF fC4 Select Voltage Gain – dB TTL Control 120 C3 1500 pF fC3 Select C2 0.015 mF fC2 Select C1 0.015 mF fC1 Select 80 fC1 fC2 fC3 fC4 fL1 0 DG201A fL2 fL3 fL4 GND V– –40 1 –15 V 10 100 1k 10 k R3 = 1 MW +15 V –15 V – R1 = 10 kW VOUT LM101A + R2 = 10 kW 100 k 1M Frequency – Hz 30 pF AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR C 3 X 1 fL (Unity Gain Frequency) = 2pR C 1 X rDS(on) –40 dB Max Attenuation = 10 kW R3 R1 = 100 (40 dB) Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency +15 V VIN1 DG200A 30 pF +15 V V+ + LM101A VIN2 – CH1 +15 V –15 V DG202 CH2 V– RF1 18 kW RF1 9.9 kW RF1 100 W RG1 2 kW RG2 100 W RG3 100 W GND –15 V Gain = RF + RG RG Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V– GND Logic High = Switch On –15 V Figure 8. A Precision Amplifier with Digitally Programable Input and Gains 8 Siliconix S-52880—Rev. E, 28-Apr-97