ETC DG271BCJ

DG271B
New Product
Vishay Siliconix
High-Speed Quad Monolithic SPST CMOS Analog Switch
Fast Settling Times
Reduced Switching Glitches
High Precision
Fast Switching tON: 55 ns
Low Charge Injection: 5 pC
Low rDS(on): 32 TTL/CMOS Compatible
Low Leakage: 50 pA
High-Speed Switching
Sample/Hold
Digital Filters
Op Amp Gain Switching
Flight Control Systems
Automatic Test Equipment
Choppers
Communication Systems
The DG271B high speed quad single-pole single-throw
analog switch is intended for applications that require low
on-resistance, low leakage currents, and fast switching
speeds.
switch conducts equally well in both directions when on, and
blocks up to the supply voltage when off. An epitaxial layer
prevents latchup.
Built on the Vishay Siliconix’ proprietary high voltage silicon
gate process to achieve superior on/off performance, each
The DG271B has a redesign internal regulator which improves
start-up over the DG271.
Dual-In-Line and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V–
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Logic
Switch
0
ON
1
OFF
Logic “0”
0 0.8 V
Logic “1” 2.4 V
Top View
Temp Range
Document Number: 70966
S-63985—Rev. A, 23-Aug-99
Package
Part Number
0 to 70C
16-Pin Plastic DIP
DG271BCJ
–40 to 85C
16-Pin Narrow SOIC
DG271BDY
www.siliconix.com FaxBack 408-970-5600
4-1
DG271B
New Product
Vishay Siliconix
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(DY Suffix) . . . . . . . . . . . . . . . . . . –65 to 150C
(CJ Suffix) . . . . . . . . . . . . . . . . . . –65 to 125C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 75C
d. Derate 7.6 mW/C above 75C
C, D Suffix
Test Conditions
Unless Specified
Parameter
0 to 70C
–40 to 85C
V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 Vf
Tempb
Mind
VANALOG
Full
–15
rDS(on)
IS = 1 mA, VD = "10 V
Room
Full
Symbol
Typc
Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
"0.05
1
20
Room
Full
–1
–20
"0.05
1
20
VS = VD = "14 V
Room
Full
–1
–20
"0.05
1
20
VD = "14 V, VS = #14 V
ID(on) +
IS(on)
W
–1
–20
ID(off)
Channel On Leakage Current
V
50
75
Room
Full
IS(off)
Switch Off Leakage Current
15
32
nA
A
Digital Control
Input Current with Voltage High
IINH
Input Current with Voltage Low
IINL
VIN = 2 V
Full
–1
0.010
1
VIN = 15 V
Full
–1
0.010
1
VIN = 0 V
Full
–1
0.010
1
Room
Full
55
65
80
Room
Full
50
65
80
Room
–5
8
mA
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
VS = "10 V
S Figure
See
Fi
3
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
See Figure 3
Source Off Capacitance
CS(off)
CD(off)
VS = 0 V,, VIN = 5 V
f = 1 MHz
MH
Room
Drain Off Capacitance
Room
8
Channel On Capacitance
CD(on)
VD = VS = 0 V, VIN = 0 V
Room
30
Off Isolation
OIRR
Room
85
Crosstalk
XTALK
CL = 10 pF, RL = 1 kW
f = 100 kHz
See Figures 4 and 5
Room
100
Room
Full
5.5
ns
pC
pF
F
dB
Supply
Positive Supply Current
I+
Negative Supply Current
I–
All Channels On or Off
VIN = 5 V or 0 V
Room
Full
–6
–8
–3.4
7.5
9
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
www.siliconix.com FaxBack 408-970-5600
4-2
Document Number: 70966
S-63985—Rev. A, 23-Aug-99
DG271B
New Product
Vishay Siliconix
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
50
V+ = 15 V
V– = –15 V
60
50
r DS(on)– Drain-Source On-Resistance ( )
r DS(on)– Drain-Source On-Resistance ( )
70
5 V
40
10 V
30
15 V
20
20 V
10
0
–20 –16 –12
–8
–4
0
4
8
12
16
20
40
125C
85C
30
25C
20
0C
–55C
10
0
–15
–10
–5
VD – Drain Voltage (V)
0
5
10
15
VD – Drain Voltage (V)
Leakage Currents vs. Temperature
Input Switching Threshold vs. Supply Voltage
10 nA
2.5
ID(on)
2
Leakage
V IN ( V )
1 nA
1.5
1
IS(off), ID(off)
100 pA
0.5
0
4
6
8
10
12
14 16
10 pA
18 20
–55
–35
–15
Positive/Negative Supplies (V)
45
65
85
105
125
Switching Time vs. Power Supply Voltage
Switching Times vs. Temperature
55
V+ = 15 V
V– = –15 V
tON
50
Switching Time (ns)
50
Switching Time (ns)
25
Temperature (C)
55
45
tOFF
40
45
tON
40
35
35
30
–55
5
tOFF
30
–25
0
25
50
Temperature (C)
Document Number: 70966
S-63985—Rev. A, 23-Aug-99
75
100
125
4
6
8
10
12
14 16
18 20
Supply Voltage (V)
www.siliconix.com FaxBack 408-970-5600
4-3
DG271B
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Switching Times vs. Temperature
Switching Times vs. Power Supply Voltage
90
180
V+ = 15 V
V– = –15 V
80
160
Switching Time (ns)
Switching Time (ns)
140
70
t(on)
60
50
t(off)
120
t(on)
100
80
40
t(off)
60
30
–55
–35
–15
5
25
45
65
85
105
40
4
125
6
Temperature (C)
8
10
12 14 16
18 20
V+ – Positive Supply (V)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
5V
Reg
V–
Level
Shift/
Drive
V+
INX
DX
GND
V–
FIGURE 1.
TEST CIRCUITS
+15 V
Logic
Input
V+
10 V
D
S
VO
IN
5V
GND
V–
RL
1 k
CL
35 pF
5V
tr <20 ns
tf <20 ns
50%
0V
tOFF
Switch
Input
VS
Switch
Output
VO
VO
90%
tON
CL (includes fixture and stray capacitance)
–15 V
VO = VS
RL
RL + rDS(on)
FIGURE 2. Switching Time
www.siliconix.com FaxBack 408-970-5600
4-4
Document Number: 70966
S-63985—Rev. A, 23-Aug-99