ETC GFP75N03

GFP75N03
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 6.5mΩ ID 80A
H
C
t
N
c
E
u
TRENFET w Prod
Ne
G
®
TO-220AB
0.185 (4.70)
0.170 (4.31)
0.154 (3.91)
Dia.
0.142 (3.60)
0.415 (10.54)
Max.
0.410 (10.41)
0.350 (8.89)
G
PIN
D
S
0.155 (3.93)
0.134 (3.40)
D
0.603 (15.32)
0.573 (14.55)
0.360 (9.14)
0.330 (8.38)
0.635 (16.13)
0.580 (14.73)
1.148 (29.16)
1.118 (28.40)
S
0.104 (2.64)
0.094 (2.39)
0.160 (4.06)
0.09 (2.28)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.026 (0.66)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.190 (4.83)
G
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.102 (2.56)
*
D
0.022 (0.56)
0.014 (0.36)
Dimensions in inches
and (millimeters)
* May be notched or flat
Features
• Advanced Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
Maximum Ratings and Thermal Characteristics (T
Parameter
C
= 25°C unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
ID
80
IDM
240
PD
69.4
27.8
W
TJ, Tstg
–55 to 150
°C
TL
275
°C
Junction-to-Case Thermal Resistance
RθJC
1.8
°C/W
Junction-to-Ambient Thermal Resistance
RθJA
62.5
°C/W
Continuous Drain Current(1)
Pulsed Drain Current
Maximum Power Dissipation
TA = 25°C
TA = 100°C
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Unit
V
A
Note: (1) Maximum DC current limited by the package
5/1/01
GFP75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
—
—
V
Drain-Source On-State Resistance(2)
RDS(on)
VGS = 10V, ID = 38A
—
5.8
6.5
VGS = 4.5V, ID = 31A
—
8.5
9.5
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
—
3.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
—
—
1.0
µA
Gate-Body Leakage
IGSS
VGS = ±20V, VDS = 0V
—
—
±100
nA
ID(on)
VDS ≥ 5V, VGS = 10V
75
—
—
A
gfs
VDS = 15V, ID = 38A
—
61
—
S
VDS=15V, VGS=5V, ID=38A
—
32.5
46
—
63
90
—
11
—
—
11
—
—
13
26
—
16
29
—
94
132
—
38
57
—
3240
—
—
625
—
—
285
—
= 25°C unless otherwise noted)
Static
(2)
On-State Drain Current
(2)
Forward Transconductance
mΩ
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
VDS = 15V, VGS = 10V
ID = 38A
VDD = 15V, RL = 15Ω
tr
Turn-Off Delay Time
ID ≅ 1A, VGEN = 10V
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
RG = 6Ω
VDS = 15V, VGS = 0V
Coss
Reverse Transfer Capacitance
f = 1.0MHZ
Crss
nC
ns
pF
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
—
—
—
75
A
VSD
IS = 38A, VGS = 0V
—
0.9
1.3
V
Note:
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDD
ton
Switching
Test Circuit
RD
VIN
VOUT
D
Switching
Waveforms
td(on)
RG
tr
td(off)
tf
90 %
90%
Output, VOUT
VGEN
toff
10%
10%
INVERTED
DUT
G
90%
50%
S
Input, VIN
50%
10%
PULSE WIDTH
GFP75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
10V
4.5V
6.0V
ID -- Drain Source Current (A)
80
80
5.0V
3.5V
60
40
3.0V
20
0
50
TJ = 125°C
40
30
--55°C
25°C
20
0
0
1
2
3
4
1
4
5
Fig. 3 – Threshold Voltage vs.
Temperature
Fig. 4 – On-Resistance vs.
Drain Current
0.016
ID = 250µA
0.014
1.5
1.3
1.1
0.9
0.7
0.012
0.01
VGS = 4.5V
0.008
VGS = 10V
0.006
0.004
0.002
0
--25
0
25
50
75
100
125
150
Fig. 5 – On-Resistance vs.
Junction Temperature
1.6
VGS = 10V
ID = 38A
1.4
1.2
1
0.8
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
0
20
40
60
ID -- Drain Current (A)
TJ -- Junction Temperature (°C)
0.6
--50
3
VGS -- Gate-to-Source Voltage (V)
1.7
0.5
--50
2
VDS -- Drain-to-Source Voltage (V)
RDS(ON) -- On-Resistance (Ω)
V(th) -- Gate-to-Source Threshold Voltage (V)
60
10
VGS = 2.5V
RDS(ON) -- On-Resistance
(Normalized)
VDS = 10V
70
4.0V
ID -- Drain Source Current (A)
100
125
150
80
100
GFP75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.03
10
VDS = 15V
ID = 38A
VGS -- Gate-to-Source Voltage (V)
RDS(ON) -- On-Resistance (Ω)
ID = 38A
0.025
0.02
0.015
TJ = 125°C
0.01
0.005
25°C
0
6
4
2
0
2
4
6
8
10
0
10
20
30
40
50
60
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 8 – Capacitance
Fig. 9 – Source-Drain Diode
Forward Voltage
70
100
4000
VGS = 0V
f = 1MHZ
VGS = 0V
3500
Ciss
3000
IS -- Source Current (A)
C -- Capacitance (pF)
8
2500
2000
1500
1000
10
TJ = 125°C
1
25°C
0.1
--55°C
Coss
500
0
Crss
0.01
0
5
10
15
20
VDS -- Drain-to-Source Voltage (V)
25
30
0
0.2
0.4
0.6
0.8
1
VSD -- Source-to-Drain Voltage (V)
1.2
1.4
GFP75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage vs.
Junction Temperature
Fig. 11 – Transient Thermal
Impedance
1
D = 0.5
ID = 250µA
RΘJA (norm) -- Normalized Thermal
Impedance
BVDSS -- Breakdown Voltage (V)
41
40
39
38
37
36
35
--50
0.2
PDM
0.1
0.1
0.05
t1
1. Duty Cycle, D = t1/t2
2. RθJC (t) = RθJC(norm) *RθJC
3. RθJC = 1.8°C/W
4. TJ - TC = PDM * RθJC (t)
0.01
--25
0
25
50
75
100
125
150
0.0001
0.001
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
0.1
1
10
Fig. 13 – Maximum Safe Operating Area
1000
Single Pulse
RθJA = 1.8°C/W
TC = 25°C
ID -- Drain Current (A)
800
Power (W)
0.01
Pulse Duration (sec.)
1000
600
400
10
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
0µ
s
100
1m
10
s
m
s
RDS(ON) Limit
10
100ms
VGS = 10V
Single Pulse
RθJC = 1.8°C/W
TA = 25°C
200
0
0.0001
t2
Single Pulse
1
0.1
DC
1
10
VDS -- Drain-Source Voltage (V)
100